Integrated chip carriers with thermocycler interfaces and methods of using the same

Patent metadata

Field	Value
Publication number	US-9623413-B2
Application number	US-76191710-A
Country	US
Kind code	B2
Filing date	Apr 16, 2010
Priority date	Apr 5, 2000
Publication date	Apr 18, 2017
Grant date	Apr 18, 2017

Abstract

Methods and systems are provided for conducting a reaction at a selected temperature or range of temperatures over time. An array device is provided. The array device contains separate reaction chambers and is formed as an elastomeric block from multiple layers. At least one layer has at least one recess that recess has at least one deflectable membrane integral to the layer with the recess. The array device has a thermal transfer device proximal to at least one of the reaction chambers. The thermal transfer device is formed to contact a thermal control source. Reagents for carrying out a desired reaction are introduced into the array device. The array device is contacted with a thermal control device such that the thermal control device is in thermal communication with the thermal control source so that a temperature of the reaction in at least one of the reaction chamber is changed as a result of a change in temperature of the thermal control source.

First claim

What is claimed is:

1. A method of conducting a reaction at a selected temperature or range of temperatures over time, the method comprising:
providing an array device comprising (i) a plurality of separate reaction chambers, each chamber comprising a chamber bottom, and (ii) a bottom surface, wherein a thermal transfer element is bonded to the bottom surface, the thermal transfer element being formed to contact a thermal control device and adapted to create a homogeneous thermal field for the plurality of separate reaction chambers, wherein the array device includes an elastomeric valve actuatable to control fluidic actions within the array device;
introducing into the array device reagents for carrying out a desired reaction; and
contacting the thermal transfer element with the thermal control device such that the thermal control device is in thermal communication with the thermal transfer element and so that a temperature of the reaction in the plurality of separate reaction chambers is homogeneously changed by the homogeneous thermal field as a result of a change in temperature of the thermal control device, wherein the thermal control device is adapted to apply a force to the thermal transfer element to urge the thermal transfer element towards the thermal control device without actuating the valve.

2. The method recited in claim 1 , wherein the force comprises a magnetic, electrostatic, or vacuum force.

3. The method recited in claim 1 , wherein the force comprises a vacuum force applied towards the thermal transfer element through channels formed in a surface of the thermal control device or the thermal transfer element.

4. The method recited in claim 3 further comprising detecting a level of vacuum achieved between the surface of the thermal control device and a surface of the thermal transfer element.

5. The method recited in claim 4 wherein detecting the level of vacuum is performed with a vacuum level detector located at a position along the channel or channels distal from a location of a source of vacuum.

6. The method recited in claim 5 wherein when the level of vacuum does not exceed a preset level an alert is manifested or a realignment protocol is engaged.

7. The method recited in claim 1 wherein contacting the thermal transfer element with the thermal control device is carried out by employment of one or more mechanical or electromechanical positioning devices.

8. The method recited in claim 1 further comprising automatically controlling and monitoring the carrying out of the method.

9. The method recited in claim 1 wherein the thermal transfer element comprises a semiconductor.

10. The method recited in claim 1 wherein the thermal transfer element comprises silicon.

11. The method recited in claim 1 wherein the thermal transfer element comprises a reflective material.

12. The method recited in claim 1 wherein the thermal transfer element comprises a metal.

13. A microfluidic system comprising:
an array device comprising a plurality of separate reaction chambers disposed within a reaction area and in fluid communication with fluid inlets of the array device, the fluid inlets being disposed outside the reaction area, wherein each reaction chamber comprises a chamber bottom and is in fluid communication with at least one of the fluid inlets via at least one channel; such that fluid introduced into at least one of the fluid inlets is delivered to at least one of the plurality of separate reaction chambers, wherein the array device includes an elastomeric valve actuatable to control fluidic actions within the array device; and
a thermal transfer interface comprising a thermally conductive material bonded to a bottom surface of the array device and arranged to create a homogeneous thermal field within the reaction area from energy received from a thermal control device such that there is homogeneous heating of the plurality of separate reaction chambers, wherein the thermal control device is adapted to apply a force to the thermal transfer interface to urge the thermal transfer interface towards the thermal control device without actuating the valve.

14. The microfluidic system recited in claim 13 wherein the thermally conductive material is reflective.

15. The microfluidic system recited in claim 13 wherein the thermally conductive material comprises a semiconductor.

16. The microfluidic system recited in claim 13 wherein the thermally conductive material comprises silicon.

17. The microfluidic system recited in claim 13 wherein the thermally conductive material comprises polished silicon.

18. The microfluidic system recited in claim 13 wherein the thermally conductive material comprises a metal.

19. The microfluidic system recited in claim 13 wherein the thermal transfer interface is further arranged to form a thermally-isolating gap between the thermal transfer interface and a carrier supporting the array device.

20. The microfluidic system recited in claim 13 wherein the thermal control device includes a plurality of thermal controls controllable to induce a thermal gradient within the reaction area.

21. The microfluidic system recited in claim 13 wherein the thermal control device is adapted for applying a vacuum source towards the thermal transfer interface through channels formed in a surface of the thermal control device or in the thermal transfer interface to apply the force to the thermal transfer interface to urge the thermal transfer interface towards the thermal control device.

22. The microfluidic system recited in claim 21 further comprising a vacuum level detector for detecting a level of vacuum achieved between the surface of the thermal control device and a surface of the thermal transfer interface.

23. The microfluidic system recited in claim 22 wherein the vacuum level detector is located at a position along the channel or channels distal from a location of a source of vacuum.

24. The microfluidic system recited in claim 13 further comprising an automatic control system in operable communication with a robotic control system for introducing and removing the array device and the thermal transfer interface from the thermal control device.

Assignees

• Facer Geoffrey
• Grossman Robert
• Unger Marc
• Lam Phillip
• Chou Hou-Pu
• Kimball Jake
• Pieprzyk Martin
• Daridon Antoine
• Fluidigm Corp

Inventors

• Facer Geoffrey
• Grossman Robert
• Unger Marc
• Lam Phillip
• Chou Hou-Pu
• Kimball Jake
• Pieprzyk Martin
• Daridon Antoine

Classifications

• B01L2400/0605

  check valves · CPC title

• B01L3/5025

  for parallel transport of multiple samples · CPC title

• B01L2300/1805

  Conductive heating, heat from thermostatted solids is conducted to receptacles, e.g. heating plates, blocks · CPC title

• B01L2200/0605

  Metering of fluids · CPC title

• B01L2400/0655

  pinch valves · CPC title