Semiconductor device and mounting structure for semiconductor element
US-2024170353-A1 · May 23, 2024 · US
US9622344B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9622344-B2 |
| Application number | US-201314391748-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 28, 2013 |
| Priority date | Apr 11, 2012 |
| Publication date | Apr 11, 2017 |
| Grant date | Apr 11, 2017 |
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A multi-layer wiring board includes wiring layers stacked on a substrate with an insulating layer between each layer. A wire formed in the wiring layer consists of a first layer and a second layer to form a double layered structure. The first layer is made of a first conductive material and the second layer is made of a second conductive material having relative magnetic permeability of 10 or more and larger than that of the first conductive material. The characteristic impedance of the wire is adjusted to a value closer to 50 ohms than that of a wire which has the same thickness as of the wire with the double layered structure, and is made only of the first conductive material.
Opening claim text (preview).
What is claimed is: 1. A multi-layer wiring board, in which more than one wiring layers are stacked on a substrate with an insulating layer between them, wherein a wire formed in the wiring layer consists of a first layer and a second layer to form a double layered structure, and said first layer is made of a first conductive material and said second layer is made of a second conductive material having relative magnetic permeability of 10 or more and larger than that of the first conductive material, thereby the characteristic impedance of said wire is adjusted to a value closer to 50 ohm than that of a wire which has the same thickness as of said wire having the double layered structure, and is made of said first conductive material only. 2. A multi-layer wiring board of claim 1 , wherein the first conductive material is copper or silver, and the second conductive material is nickel, cobalt, or an alloy comprising nickel and/or cobalt. 3. A multi-layer wiring board of claim 1 , wherein the width of the wire is not less than 10 μm, but not more than 25 μm, the thickness of the first layer is not less than 6 μm, but not more than 20 μm, and the thickness of the second layer is not less than 5%, but not more than 50% of the thickness of the first layer. 4. A multi-layer wiring board of claim 1 wherein the second layer is placed at a position further from the substrate than the first layer. 5. A multi-layer wiring board of claim 1 , wherein the material which forms the insulating layer is polyimide. 6. A multi-layer wiring board of claim 1 , wherein the wire has at least one layer made of a third conductive material having a relative magnetic permeability of 10 or more and larger than that of the first conductive material as a third layer in addition to the first layer and the second layer to form a multi-layered structure, thereby the characteristic impedance of the wire is adjusted to a value closer to 50 ohm than that of a wire having the same thickness as the wire of the multi-layered structure and is made of the first conductive material only. 7. A multi-layer wiring board of claim 6 , wherein the third conductive material is nickel, cobalt, or an alloy comprising nickel and/or cobalt. 8. A process for manufacturing a multi-layer wiring board of claim 1 , in which more than one wiring layers are stacked on a substrate with an insulating layer between them, comprising the following steps in a process for forming a wire in the wiring layer; a step of forming a first layer using a first conductive material, and a step of forming a second layer, which stacks together with the first layer, using a second conductive material having a relative magnetic permeability of 10 or more and larger than that of the first conductive material, thereby adjusting the characteristic impedance of the wire to a value closer to 50 ohm than the characteristic impedance of a wire having the thickness of the sum of the thicknesses of the first and the second layers, and is made of said first conductive material only. 9. A process for manufacturing a multi-layer wiring board of claim 6 , in which more than one wiring layers are stacked on a substrate with an insulating layer between them, comprising the following steps in a process for forming a wire in the wiring layer; a step of forming a first layer using a first conductive material, and a step of forming a second layer and at least one third layer, which stack together with the first layer, using a second conductive material and a third conductive material, respectively, both having a relative magnetic permeability of 10 or more and larger than that of the first conductive material, thereby adjusting the characteristic impedance of the wire to a value closer to 50 ohm than the characteristic impedance of a wire having the thickness of the sum of the thicknesses of the first, the second and the third layers, and is made of said first conductive material only. 10. A probe card, which equips with a multi-layer wiring board of claim 1 . 11. A multi-layer wiring board of claim 3 , wherein the wire has at least one layer made of a third conductive material having a relative magnetic permeability of 10 or more and larger than that of the first conductive material as a third layer in addition to the first layer and the second layer to form a multi-layered structure, thereby the characteristic impedance of the wire is adjusted to a value closer to 50 ohm than that of a wire having the same thickness as the wire of the multi-layered structure and is made of the first conductive material only. 12. A multi-layer wiring board of claim 11 , wherein the third conductive material is nickel, cobalt, or an alloy comprising nickel and/or cobalt. 13. A multi-layer wiring board of claim 5 , wherein the wire has at least one layer made of a third conductive material having a relative magnetic permeability of 10 or more and larger than that of the first conductive material as a third layer in addition to the first layer and the second layer to form a multi-layered structure, thereby the characteristic impedance of the wire is adjusted to a value closer to 50 ohm than that of a wire having the same thickness as the wire of the multi-layered structure and is made of the first conductive material only. 14. A multi-layer wiring board of claim 13 , wherein the third conductive material is nickel, cobalt, or an alloy comprising nickel and/or cobalt. 15. A process for manufacturing a multi-layer wiring board of claim 3 , in which more than one wiring layers are stacked on a substrate with an insulating layer between them, comprising the following steps in a process for forming a wire in the wiring layer; a step of forming a first layer using a first conductive material, and a step of forming a second layer, which stacks together with the first layer, using a second conductive material having a relative magnetic permeability of 10 or more and larger than that of the first conductive material, thereby adjusting the characteristic impedance of the wire to a value closer to 50 ohm than the characteristic impedance of a wire having the thickness of the sum of the thicknesses of the first and the second layers, and is made of said first conductive material only. 16. A process for manufacturing a multi-layer wiring board of claim 5 , in which more than one wiring layers are stacked on a substrate with an insulating layer between them, comprising the following steps in a process for forming a wire in the wiring layer; a step of forming a first layer using a first conductive material, and a step of forming a second layer, which stacks together with the first layer, using a second conductive material having a relative magnetic permeability of 10 or more and larger than that of the first conductive material, thereby adjusting the characteristic impedance of the wire to a value closer to 50 ohm than the characteristic impedance of a wire having the thickness of the sum of the thicknesses of the first and the second layers, and is made of said first conductive material only. 17. A probe card, which equips with a multi-layer wiring board of claim 2 . 18. A probe card, which equips with a multi-layer wiring board of claim 3 . 19. A probe card, which equips with a multi-layer wiring board of claim 5 . 20. A probe card, which equips with a multi-layer wiring board of claim 6 . 21. A probe card, which equips with a multi-layer wiring board of claim 7 .
Impedance arrangements, e.g. impedance matching, reduction of parasitic impedance (H05K1/024 and H05K1/0243 take precedence; for semiconductor devices H10W44/20) · CPC title
Manufacturing circuit on or in base · CPC title
Means against parasitic impedance; Means against eddy currents · CPC title
Resistance and impedance · CPC title
Filters, inductors or a magnetic substance · CPC title
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