Method for forming pattern, method for manufacturing light emitting device, and light emitting device

Patent metadata

Field	Value
Publication number	US-9620714-B2
Application number	US-201113213255-A
Country	US
Kind code	B2
Filing date	Aug 19, 2011
Priority date	Jun 19, 2007
Publication date	Apr 11, 2017
Grant date	Apr 11, 2017

Abstract

Oxidation treatment is performed to the surface of a substrate provided with a photocatalytic conductive film and an insulating film; treatment with a silane coupling agent is performed, so that a silane coupling agent film is formed and the surface of the substrate is modified to be liquid-repellent; and the surface of the substrate is irradiated with light of a wavelength (less than to equal to 390 nm) which has energy of greater than or equal to a band gap of a material for forming the photocatalytic conductive film, so that only the silane coupling agent film over the surface of the photocatalytic conductive film is decomposed and the surface of the photocatalytic conductive film can be modified to be lyophilic.

First claim

What is claimed is:

1. A light emitting device comprising:
a thin film transistor over a substrate;
a photocatalytic conductive film electrically connected to the thin film transistor;
an insulating film covering an end portion of the photocatalytic conductive film;
a silane coupling agent film over the insulating film;
a layer containing an organic compound over and in contact with the photocatalytic conductive film; and
a conductive film over the silane coupling agent film and the layer containing the organic compound, and
wherein a side surface of the insulating film is covered by the silane coupling agent film,
wherein the silane coupling agent film is in contact with an upper portion of the insulating film,
wherein the photocatalytic conductive film and the conductive film both have a light-transmitting property, and
wherein a reflective film or a light-blocking film are provided for the photocatalytic conductive film on a side opposite to the conductive film.

2. The light emitting device according to claim 1 , wherein the photocatalytic conductive film includes indium tin oxide, indium zinc oxide which is obtained by mixing zinc oxide of greater than or equal to 2% and less than or equal to 20% into indium oxide, indium tin oxide containing silicon oxide as a constituent, indium oxide doped with tin, zinc oxide, zinc oxide doped with aluminum, zinc oxide doped with gallium, titanium oxide, or tin oxide.

3. The light emitting device according to claim 1 ,
wherein the silane coupling agent film includes fluoroalkylsilane represented by a chemical formula R n —Si—X (4−n) ; and
wherein n is 1 to 3, X represents a hydrolyzable group, and R represents a fluoroalkyl group in the chemical formula.

4. The light emitting device according to claim 1 , wherein the layer containing the organic compound includes a light emitting substance.

5. A light emitting device comprising:
a thin film transistor over a substrate;
a photocatalytic conductive film electrically connected to the thin film transistor;
an insulating film covering an end portion of the photocatalytic conductive film;
a silane coupling agent film over the insulating film;
a layer containing an organic compound over and in contact with the photocatalytic conductive film; and
a conductive film over the silane coupling agent film and the layer containing the organic compound,
wherein the photocatalytic conductive film is electrically connected to one of source or drain of the thin film transistor,
wherein a side surface of the insulating film is covered by the silane coupling agent film, and
wherein the silane coupling agent film is in contact with a upper portion of the insulating film,
wherein the photocatalytic conductive film and the conductive film both have a light-transmitting property, and
wherein a reflective film or a light-blocking film are provided for the photocatalytic conductive film on a side opposite to the conductive film.

6. The light emitting device according to claim 5 , wherein the photocatalytic conductive film includes indium tin oxide, indium zinc oxide which is obtained by mixing zinc oxide of greater than or equal to 2% and less than or equal to 20% into indium oxide, indium tin oxide containing silicon oxide as a constituent, indium oxide doped with tin, zinc oxide, zinc oxide doped with aluminum, zinc oxide doped with gallium, titanium oxide, or tin oxide.

7. The light emitting device according to claim 5 ,
wherein the silane coupling agent film includes fluoroalkylsilane represented by a chemical formula R n —Si—X (4−n) ; and
wherein n is 1 to 3, X represents a hydrolyzable group, and R represents a fluoroalkyl group in the chemical formula.

8. The light emitting device according to claim 5 , wherein the layer containing the organic compound includes a light emitting substance.

9. A light emitting device comprising:
a photocatalytic conductive film over a substrate;
an insulating film covering an end portion of the photocatalytic conductive film;
a silane coupling agent film over the insulating film;
a layer containing an organic compound over and in contact with the photocatalytic conductive film; and
a conductive film over the silane coupling agent film and the layer containing the organic compound,
wherein a side surface of the insulating film is covered by the silane coupling agent film. and
wherein the silane coupling agent film is in contact with a upper portion of the insulating film,
wherein the photocatalytic conductive film and the conductive film both have a light-transmitting property, and
wherein a reflective film or a light-blocking film are provided for the photocatalytic conductive film on a side opposite to the conductive film.

10. The light emitting device according to claim 9 , wherein the photocatalytic conductive film includes indium tin oxide, indium zinc oxide which is obtained by mixing zinc oxide of greater than or equal to 2% and less than or equal to 20% into indium oxide, indium tin oxide containing silicon oxide as a constituent, indium oxide doped with tin, zinc oxide, zinc oxide doped with aluminum, zinc oxide doped with gallium, titanium oxide, or tin oxide.

11. The light emitting device according to claim 9 ,
wherein the silane coupling agent film includes fluoroalkylsilane represented by a chemical formula R n —Si—X (4−n) ; and
wherein n is 1 to 3, X represents a hydrolyzable group, and R represents a fluoroalkyl group in the chemical formula.

12. The light emitting device according to claim 9 , wherein the layer containing the organic compound includes a light emitting substance.

13. A light emitting device comprising:
a photocatalytic conductive film over a substrate;
an insulating film covering an end portion of the photocatalytic conductive film;
a silane coupling agent film over the insulating film;
a layer containing an organic compound over and in contact with the photocatalytic conductive film; and
a conductive film over the silane coupling agent film and the layer containing the organic compound,
wherein the photocatalytic conductive film is electrically connected to the layer containing the organic compound,
wherein a side surface of the insulating film is covered by the silane coupling agent film, and
wherein the silane coupling agent film is in contact with a upper portion of the insulating film,

wherein the photocatalytic conductive film and the conductive film both have a light-transmitting property, and
wherein a reflective film or a light-blocking film are provided for the photocatalytic conductive film on a side opposite to the conductive film.

14. The light emitting device according to claim 13 , wherein the photocatalytic conductive film includes indium tin oxide, indium zinc oxide which is obtained by mixing zinc oxide of greater than or equal to 2% and less than or equal to 20% into indium oxide, indium tin oxide containing silicon oxide as a constituent, indium oxide doped with tin, zinc oxide, zinc oxide doped with aluminum, zinc oxide doped with gallium, titanium oxide, or tin oxide.

15. The light emitting device according to claim 13 ,
wherein the silane coupling agent film includes fluoroalkylsilane represented by a chemical formula R n —Si—X (4−n) ; and
wherein n is 1 to 3, X represents a hydrolyzable group, and R represents a fluoroalkyl group in the chemical formula.

16. The light emitting device according to claim 13 , wherein the layer containing the organic compound includes a light emitting substance.

17. The light emitting device according to claim 1 ,
wh

Assignees

• Fujii Gen
• Takahashi Erika
• Semiconductor Energy Lab

Inventors

• Fujii Gen
• Takahashi Erika

Classifications

• H10W20/096

  by contacting with gases, liquids or plasmas · CPC title

• H10W20/095

  by irradiating with electromagnetic or particle radiation (plasma treatment H10W20/096) · CPC title

• H10K71/40

  Thermal treatment, e.g. annealing in the presence of a solvent vapour · CPC title

• H01L51/0545

  Electricity · mapped topic

• H01L51/0005 Primary

  Electricity · mapped topic