Thermoelectric conversion material

Patent metadata

Field	Value
Publication number	US-9620697-B2
Application number	US-201314379987-A
Country	US
Kind code	B2
Filing date	Feb 19, 2013
Priority date	Feb 24, 2012
Publication date	Apr 11, 2017
Grant date	Apr 11, 2017

Abstract

The present invention provides a thermoelectric conversion material of which the structure is controlled to have nano-order microscopic pores and which has a low thermal conductivity and has an improved thermoelectric performance index. In the thermoelectric conversion material having a thermoelectric semiconductor layer formed on a block copolymer substrate that comprises a block copolymer having microscopic pores, wherein the block copolymer comprises a polymer unit (A) formed of a monomer capable of forming a homopolymer having a glass transition temperature of 50° C. or higher, and a polymer unit (B) formed of a conjugated dienic polymer.

First claim

The invention claimed is:

1. A thermoelectric conversion material, comprising:
a non-contiguous thermoelectric semiconductor layer present on a block copolymer substrate that comprises a block copolymer and has microscopic pores within the block copolymer substrate,
wherein
the block copolymer comprises a polymer unit (A) comprised of at least one unit selected from the group consisting of polystyrene, an o-polymethylstyrene, a p-polymethylstyrene, a polypropylstyrene, a polymethoxystyrene, a polymethyl methacrylate, a polyethyl methacrylate, a poly-t-butyl methacrylate, a polycyclohexyl methacrylate, a polybenzyl methacrylate, a poly-2-vinylpyridine, and a poly-4-vinylpyridine, said polymer unit (A) having a glass transition temperature of 50° C. or higher,
and a polymer unit (B) comprised of a conjugated dienic polymer,
wherein the non-contiguous thermoelectric semiconductor layer has a first portion of the layer that only partially fills the microscopic pores of the block copolymer substrate and is present in an inner bottom portion of the microscopic pores of the block copolymer substrate,
wherein the non-contiguous thermoelectric semiconductor layer has a second portion of the layer that is present on the top of the block copolymer substrate,
wherein the microscopic pores have a depth of from 5 to 1,000 nm and have a mean diameter of from 5 to 1,000 nm,
wherein a mean distance between the microscopic pores is from 10 to 1,500 nm,
wherein the first portion of the non-contiguous thermoelectric semiconductor layer has a thickness of from 5 to 200 nm, and
wherein the second portion of the non-contiguous thermoelectric semiconductor layer has a thickness of from 10 to 500 nm.

2. The thermoelectric conversion material according to claim 1 , wherein the polymer unit (A) is comprised of polystyrene.

3. The thermoelectric conversion material according to claim 1 , wherein the polymer unit (B) is comprised of polyisoprene.

4. The thermoelectric conversion material according to claim 1 , wherein
the polymer unit (A) in the block copolymer has a number-average molecular weight of from 500 to 500,000,
the polymer unit (B) in the block copolymer has a number-average molecular weight of from 500 to 500,000, and
the amount of polymer unit (B) in the block copolymer is from 1 to 40% by mass, relative to the total mass of polymer unit (A) and polymer unit (B).

5. The thermoelectric conversion material according to claim 1 , wherein each of the first and second portions of the non-contiguous thermoelectric semiconductor layer comprises a p-type bismuth telluride or an n-type bismuth telluride.

6. The thermoelectric conversion material according to claim 1 , wherein each of the first and second portions of the non-contiguous thermoelectric semiconductor layer comprises a p-type bismuth telluride, where the p-type bismuth telluride is Bi X Te 3 Sb 2-X where 0<X≦0.6.

7. The thermoelectric conversion material according to claim 1 , wherein each of the first and second portions of the non-contiguous thermoelectric semiconductor layer comprises a n-type bismuth telluride, where the n-type bismuth telluride is Bi 2.0 Te 3-Y Se Y where 0<Y≦3.

8. The thermoelectric conversion material according to claim 1 , wherein the polymer unit (B) has a glass transition temperature of 20° C. or less.

9. The thermoelectric conversion material according to claim 1 , wherein a molecular weight distribution of polymer unit (A) is 1.3 or less, and the molecular weight distribution of polymer unit (B) is from 1.0 to 1.2.

10. The thermoelectric conversion material according to claim 1 , wherein
polymer unit (B) is comprised of at least one of polyisoprene, polybutadiene, polypentadiene, polyhexadiene, polycyclopentadiene, policyclohexadiene, polycycloheptadiene, and polycyclooctadiene.

11. The thermoelectric conversion material according to claim 1 , wherein
polymer unit (B) is comprised of polybutadiene.

12. The thermoelectric conversion material according to claim 1 , wherein the non-contiguous thermoelectric semiconductor layer is formed by flash vapor deposition.

13. The thermoelectric conversion material according to claim 1 , wherein
the first portion of the non-contiguous thermoelectric semiconductor layer is only partially filled in the microscopic pores by flash vapor deposition.

14. The thermoelectric conversion material according to claim 1 ,
wherein the first portion of the non-contiguous thermoelectric semiconductor layer has a thickness of from 5 to 100 nm, and
wherein the second portion of the non-contiguous thermoelectric semiconductor layer has a thickness of from 10 to 300 nm.

15. A thermoelectric conversion material, comprising:
a non-contiguous thermoelectric semiconductor layer present on a block copolymer substrate that comprises a block copolymer and has microscopic pores within the block copolymer substrate, wherein
the block copolymer comprises a polymer unit (A) comprised of at least one unit selected from the group consisting of polystyrene, an o-polymethylstyrene, a p-polymethylstyrene, a polypropylstyrene, a polymethoxystyrene, a polymethyl methacrylate, a polyethyl methacrylate, a poly-t-butyl methacrylate, a polycyclohexyl methacrylate, a polybenzyl methacrylate, a poly-2-vinylpyridine, and a poly-4-vinylpyridine, said polymer unit (A) having a glass transition temperature of 50° C. or higher,
and a polymer unit (B) comprised of a conjugated dienic polymer,
wherein the non-contiguous thermoelectric semiconductor layer has a first portion of the layer that partially fills the microscopic pores of the block copolymer substrate and is present in an inner bottom portion of the microscopic pores of the block copolymer substrate,
wherein the non-contiguous thermoelectric semiconductor layer has a second portion of the layer that is present on the top of the block copolymer substrate and the second portion of the non-contiguous thermoelectric semiconductor layer at least partially covers the top of the block copolymer substrate,
wherein the microscopic pores have a depth of from 5 to 1,000 nm and have a mean diameter of from 5 to 1,000 nm,
wherein a mean distance between the microscopic pores is from 10 to 1,500 nm,
wherein the first portion of the non-contiguous thermoelectric semiconductor layer has a thickness of from 5 to 200 nm, and
wherein the second portion of the non-contiguous thermoelectric semiconductor layer has a thickness of from 10 to 500 nm.

Assignees

• Kyushu Inst Technology
• Lintec Corp

Inventors

• Mutou Tsuyoshi
• Miyazaki Koji
• Hatasako Yoshika
• Kato Kunihisa

Classifications

• H01L35/24 Primary

  Electricity · mapped topic

• H01L35/32

  Electricity · mapped topic

• H01L35/16

  Electricity · mapped topic

• H01L35/18

  Electricity · mapped topic

• H01L35/34

  Electricity · mapped topic