Nanostructure semiconductor light emitting device
US-2016064608-A1 · Mar 3, 2016 · US
Monolithic image chip for near-to-eye display
US9620559B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9620559-B2 |
| Application number | US-201514865459-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 25, 2015 |
| Priority date | Sep 26, 2014 |
| Publication date | Apr 11, 2017 |
| Grant date | Apr 11, 2017 |
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- Title
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Abstract
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A set of light emitting devices can be formed on a substrate. A growth mask having a first aperture in a first area and a second aperture in a second area is formed on a substrate. A first nanowire and a second nanowire are formed in the first and second apertures, respectively. The first nanowire includes a first active region having a first band gap and a second active region having a second band gap. The first band gap is greater than the second band gap. The second nanowire includes an active region having the first band gap and does not include, or is adjoined to, any material having the second band gap.
First claim
Opening claim text (preview).
The invention claimed is: 1. A display device including light emitting devices, comprising: a first light emitting device containing a first semiconductor active region located over a substrate, wherein the first semiconductor active region has a first band gap that emits light at a first wavelength; and a second light emitting device containing a second semiconductor active region located over the substrate and a conversion medium overlying the second semiconductor active region, wherein the conversion medium converts shorter wavelength light emitted from the second semiconductor active region to light having a target color; wherein: the first semiconductor active region is located in a first nanowire; the second semiconductor active region is located in a second nanowire; the second semiconductor active region has the first band gap; the conversion medium comprises an inorganic phosphor, organic luminescent material or quantum dots; and the conversion medium generates the target color having a longer wavelength than the shorter wavelength light emitted from the second semiconductor active region, and direct emission from the first light emitting device generates an additional color to achieve different color subpixels in a display.
Assignees
Inventors
Classifications
Micro- or nanomaterials · CPC title
- H01L27/15Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9620559B2 cover?
- A set of light emitting devices can be formed on a substrate. A growth mask having a first aperture in a first area and a second aperture in a second area is formed on a substrate. A first nanowire and a second nanowire are formed in the first and second apertures, respectively. The first nanowire includes a first active region having a first band gap and a second active region having a second …
- Who is the assignee on this patent?
- Glo Ab
- What technology area does this patent fall under?
- Primary CPC classification H01L27/15. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Apr 11 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).