Semiconductor device and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-9620408-B2
Application number	US-201514644375-A
Country	US
Kind code	B2
Filing date	Mar 11, 2015
Priority date	Oct 30, 2001
Publication date	Apr 11, 2017
Grant date	Apr 11, 2017

Abstract

A semiconductor device having a semiconductor element (a thin film transistor, a thin film diode, a photoelectric conversion element of silicon PIN junction, or a silicon resistor element) which is light-weight, flexible (bendable), and thin as a whole is provided as well as a method of manufacturing the semiconductor device. In the present invention, the element is not formed on a plastic film. Instead, a flat board such as a substrate is used as a form, the space between the substrate (third substrate ( 17 )) and a layer including the element (peeled layer ( 13 )) is filled with coagulant (typically an adhesive) that serves as a second bonding member ( 16 ), and the substrate used as a form (third substrate ( 17 )) is peeled off after the adhesive is coagulated to hold the layer including the element (peeled layer ( 13 )) by the coagulated adhesive (second bonding member ( 16 )) alone. In this way, the present invention achieves thinning of the film and reduction in weight.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device, comprising the steps of:
forming a separation layer over a first substrate;
forming a layer to be peeled over the separation layer;
bonding a second substrate over the layer to be peeled using a first adhesive layer so that the layer to be peeled is positioned between the first substrate and the second substrate; and
separating the first substrate and the separation layer from the layer to be peeled by irradiating the separation layer with laser light through the first substrate.

2. The method according to claim 1 , wherein, by irradiating the separation layer with laser light, hydrogen is released from the separation layer and a gap is created in the separation layer.

3. The method according to claim 1 , wherein the separation layer comprises amorphous silicon or polysilicon.

4. The method according to claim 1 , wherein the first substrate is one of a glass substrate, a quartz substrate, and a metal substrate.

5. The method according to claim 1 , further comprising the steps of:
bonding a third substrate to the layer to be peeled using a second adhesive layer so that the layer to be peeled is positioned between the second substrate and the first substrate; and
separating the second substrate from the layer to be peeled.

6. The method according to claim 5 , further comprising the steps of:
separating the third substrate from the second adhesive layer;
pasting the second adhesive layer on a curved surface of a base member.

7. The method according to claim 5 , wherein the second adhesive layer comprises at least one of reaction-cured adhesives, thermally-curable adhesives, photo-curable adhesives, and anaerobic adhesives.

8. The method according to claim 5 , wherein the third substrate is a plastic substrate comprising at least one of polyethyleneterephthalate, polyethersulfone, polyethylene naphthalate, polycarbonate, nylon, polyetheretherketone, polysulfone, polyetherimide, polyarylate, polybutylene terephthalate, and polyimide.

9. The method according to claim 1 , wherein the first adhesive layer comprises at least one of reaction-cured adhesives, thermally-curable adhesives, photo-curable adhesives, and anaerobic adhesives.

10. The method according to claim 1 , wherein the second substrate is a plastic substrate comprising at least one of polyethyleneterephthalate, polyethersulfone, polyethylene naphthalate, polycarbonate, nylon, polyetheretherketone, polysulfone, polyetherimide, polyarylate, polybutylene terephthalate, and polyimide.

11. A method of manufacturing a semiconductor device, comprising the steps of:
forming a separation layer over a first substrate;
forming a semiconductor layer over the separation layer;
forming a semiconductor element including the semiconductor layer;
bonding a second substrate over the semiconductor element using a first adhesive layer so that the semiconductor element is positioned between the first substrate and the second substrate; and
separating the first substrate and the separation layer from the semiconductor element by irradiating the separation layer with laser light through the first substrate.

12. The method according to claim 11 , wherein, by irradiating the separation layer with laser light, hydrogen is released from the separation layer and a gap is created in the separation layer.

13. The method according to claim 11 , wherein the separation layer comprises amorphous silicon or polysilicon.

14. The method according to claim 11 , wherein the first substrate is one of a glass substrate, a quartz substrate, and a metal substrate.

15. The method according to claim 11 , further comprising the steps of:
bonding a third substrate to the semiconductor element using a second adhesive layer so that the semiconductor element is positioned between the second substrate and the third substrate; and
separating the second substrate from the semiconductor element.

16. The method according to claim 15 , further comprising the steps of:
separating the third substrate from the second adhesive layer; and
pasting the second adhesive layer on a curved surface of a base member.

17. The method according to claim 11 , wherein the second substrate is a plastic substrate comprising at least one of polyethyleneterephthalate, polyethersulfone, polyethylene naphthalate, polycarbonate, nylon, polyetheretherketone, polysulfone, polyetherimide, polyarylate, polybutylene terephthalate, and polyimide.

18. The method according to claim 15 , wherein the second adhesive layer comprises at least one of reaction-cured adhesives, thermally-curable adhesives, photo-curable adhesives, and anaerobic adhesives.

19. The method according to claim 15 , wherein the third substrate is a plastic substrate comprising at least one of polyethyleneterephthalate, polyethersulfone, polyethylene naphthalate, polycarbonate, nylon, polyetheretherketone, polysulfone, polyetherimide, polyarylate, polybutylene terephthalate, and polyimide.

20. The method according to claim 11 , wherein the first adhesive layer comprises at least one of reaction-cured adhesives, thermally-curable adhesives, photo-curable adhesives, and anaerobic adhesives.

21. A method of manufacturing a semiconductor device comprising the steps of:
forming a separation layer over a first substrate;
forming a semiconductor layer over the separation layer;
heating the semiconductor layer in order to obtain a semiconductor film having crystal structure;
patterning the semiconductor film to form a semiconductor island;
forming a semiconductor element including the semiconductor island;
bonding a second substrate over the semiconductor element using a first adhesive layer so that the semiconductor element is positioned between the first substrate and the second substrate; and
separating the first substrate and the separation layer from the semiconductor element by irradiating the separation layer with laser light through the first substrate.

22. The method according to claim 21 , wherein, by irradiating the separation layer with laser light, hydrogen is released from the separation layer and a gap is created in the separation layer.

23. The method according to claim 21 , wherein the separation layer comprises amorphous silicon or polysilicon.

24. The method according to claim 21 , wherein the first substrate is one of a glass substrate, a quartz substrate, and a metal substrate.

25. The method according to claim 21 , further comprising the steps of:
bonding a third substrate to the semiconductor element using a second adhesive layer so that the semiconductor element is positioned between the second substrate and the third substrate; and
separating the second substrate from the semiconductor element.

26. The method according to claim 25 , further comprising the steps of:
separating the third substrate from the second adhesive layer; and
pasting the second adhesive layer on a curved surface of a base member.

27. The method according to claim 25 , wherein the second adhesive layer comprises at least one of reaction-cured adhesives, thermally-curable adhesives, photo-curable adhesives, and anaerobic adhesives.

28. The method according to claim 25 , wherein the third substrate is a plastic substrate comprising at least one of polyethyleneterephthalate, polyethersulfone, polyethylene naphthalate, poly

Assignees

• Semiconductor Energy Lab

Inventors

• Maruyama Junya
• Takayama Toru
• Goto Yuugo

Classifications

• H10P50/691

  for Group V materials or Group III-V materials · CPC title

• H10W10/181

  Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers · CPC title

• H10W10/061

  using SOI processes together with lateral isolation, e.g. combinations of SOI and shallow trench isolations · CPC title

• H10P90/1914

  using bonding · CPC title

• H10K71/421

  using coherent electromagnetic radiation, e.g. laser annealing · CPC title