Reactive depletion of reactor deposits in harvesting polycrystalline silicon rods

Patent metadata

Field	Value
Publication number	US-9620359-B2
Application number	US-201414761523-A
Country	US
Kind code	B2
Filing date	Jan 13, 2014
Priority date	Jan 17, 2013
Publication date	Apr 11, 2017
Grant date	Apr 11, 2017

Abstract

The Siemens process for deposition of polycrystalline silicon in the form of rods in a sealed reactor is improved by, after introduction of deposition gas has ceased, introducing a ventilating gas into the partially sealed reactor, withdrawing a gas stream from the reactor, and monitoring the components in the gas stream withdrawn until a desired concentration of one or more components is reached, and opening the reactor to remove the rods.

First claim

The invention claimed is:

1. A process for depositing polycrystalline silicon, comprising introducing a reaction gas comprising a silicon-containing component and hydrogen into a reactor positioned on a base plate, as a result of which polycrystalline silicon is deposited in the form of rods, wherein the reactor, after the deposition has ended, is partially opened and ventilated for a particular period prior to full opening and removal of the rods, wherein moistened nitrogen and/or air is introduced into the reactor as a medium for ventilating.

2. The process of claim 1 , in which the reactor is opened by raising the reactor above the base plate.

3. The process of claim 1 , wherein the reactor is opened by opening a sightglass.

4. The process of claim 1 , wherein the reactor is opened by opening one or more of a flange, an input gas line or an offgas line.

5. The process of claim 1 , wherein the medium is fed into the reactor and then removed again during the opening of the reactor.

6. The process of claim 1 , wherein gases fed in and removed are monitored for discharged constituents resulting from the reactive depletion of bell jar deposits.

7. The process of claim 5 , wherein the medium is fed in through a sightglass and the medium is removed again via offgas orifices or a second sightglass orifice.

8. The process of claim 5 , wherein the medium is fed in and removed through the same orifice.

9. A process for depositing polycrystalline silicon, comprising introducing a reaction gas comprising a silicon-containing component and hydrogen into a reactor positioned on a base plate, as a result of which polycrystalline silicon is deposited in the form of rods, wherein the reactor, after the deposition has ended and before rod deinstallation begins, is partially opened and ventilated with a gaseous medium for a period of time prior to complete opening of the reactor by raising the reactor bell jar above the base plate,
wherein a gap which forms between the reactor and base plate and is utilized for ventilation and media supply is, as a percentage, 0.5-15% of the total height of the reactor above the base plate, wherein through the gap, a gaseous medium is introduced and then removed via suction or a sightglass,
wherein the time period for ventilation is less than one tenth of the time of the process step of deposition, and the volume flow rate of the gaseous medium introduced is 50-2000 m 3 /h,

wherein moistened nitrogen and/or air is introduced into the reactor as the gaseous medium for ventilation.

10. The process of claim 9 , wherein between the base plate and the bell jar supports are provided.

11. The process of claim 9 , wherein a reactive depletion of bell jar deposits is monitored by online monitoring of an amount of hydrogen chloride gas formed by reaction of reactor deposits with the moisture of the gaseous medium, and the ventilation is ended depending on a limiting concentration to be achieved.

12. The process of claim 9 , wherein the period for ventilation begins with the partial opening of the reactor after the deposition of a batch of polycrystalline silicon and includes the period after the deposition has ended, when the rods have reached the desired final diameter, until the removal of the bell jar or parts thereof for the purpose of deinstalling the first polycrystalline rod from the reactor.

Assignees

• Wacker Chemie Ag

Inventors

• Mueller Barbara
• Koch Thomas

Classifications

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• H10P14/3456 Primary

  Polycrystalline · CPC title

• H01L21/02532

  Electricity · mapped topic

• H01L21/02595 Primary

  Electricity · mapped topic