Self-referenced MRAM cell that can be read with reduced power consumption

Patent metadata

Field	Value
Publication number	US-9620187-B2
Application number	US-201414772916-A
Country	US
Kind code	B2
Filing date	Feb 21, 2014
Priority date	Mar 7, 2013
Publication date	Apr 11, 2017
Grant date	Apr 11, 2017

Abstract

Self-referenced magnetic random access memory (MRAM) cell including a magnetic tunnel junction including a sense layer; a storage layer having a storage magnetization; a tunnel barrier layer between the sense and the storage layers; and an antiferromagnetic layer exchange-coupling the storage layer such that the storage magnetization can be pinned when the antiferromagnetic layer is below a critical temperature and freely varied when the antiferromagnetic layer is heated at or above the critical temperature. The sense layer includes a first sense layer having a first sense magnetization, a second sense layer having a second sense magnetization and spacer layer between the first and second sense layers. The MRAM cell can be read with low power consumption.

First claim

What is claimed is:

1. Self-referenced magnetic random access memory (MRAM) cell comprising a magnetic tunnel junction including a sense layer; a storage layer having a storage magnetization; a tunnel barrier layer comprised between the sense and the storage layers; and an antiferromagnetic layer exchange-coupling the storage layer such that the storage magnetization can be pinned when the antiferromagnetic layer is below a critical temperature and freely varied when the antiferromagnetic layer is heated at or above the critical temperature;
said sense layer comprising a first sense layer having a first sense magnetization, a second sense layer having a second sense magnetization and spacer layer between the first and second sense layers, the spacer layer being a metal layer which introduces a Ruderman-Kittel-Kasuya-Yosida (RKKY) coupling, and wherein either,
the dimension of the magnetic tunnel junction along the first and second sense magnetization, is larger than 100 nm and the spacer layer has a thickness greater than 2 nm such that said RKKY coupling is below the magnetic coupling required for antiferromagnetic SAF coupling between the first and second sense layers; or,
the dimension of the magnetic tunnel junction along the first and second sense magnetization, is smaller than 100 nm and the spacer layer has a thickness between 1 nm and 2 nm such that RKKY coupling is a parallel coupling counterbalancing dipolar coupling between the first and second sense layer.

2. MRAM cell according to claim 1 , wherein the spacer layer has a thickness such that no direct ferromagnetic coupling occurs between the first and second sense layers.

3. MRAM cell according to claim 1 , wherein the spacer layer has a thickness such that RKKY coupling corresponds to a minimum in the periodic variation of the RKKY interaction with the thickness of the spacer layer.

4. RAM cell according to claim 1 , wherein the first and second sense layers allows for scissoring switching of the first and second sense magnetization.

5. RAM cell according to claim 4 , wherein the spacer layer is arranged such that antiparallel constant is comprised between 0.01 and 1.

6. RAM cell according to claim 4 , wherein the spacer layer is arranged such that said scissoring switching comprises a symmetric configuration.

7. RAM cell according to claim 6 , wherein said scissoring switching occurs through a rotation of the first and second sense magnetization, clockwise or counter-clockwise.

8. Method for reading a self-referenced magnetic random access memory (MRAM) cell comprising a magnetic tunnel junction including a sense layer; a storage layer having a storage magnetization; a tunnel barrier layer comprised between the sense and the storage layers; and an antiferromagnetic layer exchange-coupling the storage layer such that the storage magnetization can be pinned when the antiferromagnetic layer is below a critical temperature and freely varied when the antiferromagnetic layer is heated at or above the critical temperature; said sense layer comprising a first sense layer having a first sense magnetization, a second sense layer having a second sense magnetization and spacer layer between the first and second sense layers, the spacer layer being a metal layer which introduces a Ruderman-Kittel-Kasuya-Yosida (RKKY) coupling, and wherein either, the dimension of the magnetic tunnel junction along the first and second sense magnetization, is larger than 100 nm and the spacer layer has a thickness greater than 2 nm such that said RKKY coupling is below the magnetic coupling required for antiferromagnetic SAF coupling between the first and second sense layers; or the dimension of the magnetic tunnel junction along the first and second sense magnetization, is smaller than 100 nm and the spacer layer has a thickness between 1 nm and 2 nm such that RKKY coupling is a parallel coupling counterbalancing dipolar coupling between the first and second sense layer;
the method comprising
applying a first read magnetic field for switching the first and second sense magnetizations in a first direction;
comparing the first direction of the switched first and second sense magnetizations with the storage magnetization by passing a sense current though the magnetic tunnel junction such as to measure a first resistance value of the magnetic tunnel junction;
applying a second read magnetic field for switching the first and second sense magnetizations in a second direction opposed to the first direction; and
comparing the second direction of the switched first and second sense magnetizations with the storage magnetization by passing the sense current though the magnetic tunnel junction such as to measure a second resistance value of the magnetic tunnel junction.

9. Method according to claim 8 , wherein said switching of the first and second sense magnetization comprises scissoring switching in a symmetric configuration, whereby the first and second sense magnetization are rotated in opposite directions.

10. Method according to claim 8 , wherein said switching of the first and second sense magnetization occurs through a rotation of the first and second sense magnetizations, clockwise or counter-clockwise.

Assignees

• Crocus Technology Sa

Inventors

• Stainer Quentin

Classifications

• G11C11/1675

  Writing or programming circuits or methods · CPC title

• G11C11/161 Primary

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• G11C11/1673

  Reading or sensing circuits or methods · CPC title

• H01L43/02

  Electricity · mapped topic

• H01L43/08

  Electricity · mapped topic