Method for forming resist pattern, resist pattern splitting agent, split pattern improving agent, resist pattern splitting material, and positive resist composition for forming split pattern

Patent metadata

Field	Value
Publication number	US-9618845-B2
Application number	US-201514864099-A
Country	US
Kind code	B2
Filing date	Sep 24, 2015
Priority date	Sep 26, 2014
Publication date	Apr 11, 2017
Grant date	Apr 11, 2017

Abstract

A method of forming a resist pattern, including: a step A in which a positive resist composition is applied to a substrate to form a positive resist film, the positive resist film is exposed and the positive resist film is subjected to an alkali development to form a first resist pattern; a step B in which a solution containing an acid or a thermoacid generator is applied to the substrate whereon the first resist pattern is formed, so as to cover the first resist pattern, to form a structure having the first resist pattern and a first layer covering the first resist pattern; a step C in which the structure is heated and the solubility of the first resist pattern in an organic solvent is changed under action of the acid or under action of acid generated from the thermoacid generator; and a step D in which the structure after heating is developed with the organic solvent to remove a region of the first resist pattern other than the region of the first resist pattern where the solubility in the organic solvent is changed, so as to form a second resist pattern.

First claim

What is claimed is:

1. A method of forming a resist pattern, including:
applying a positive resist composition to a substrate to form a positive resist film, exposing the positive resist film and subjecting the positive resist film to an alkali development to form a first resist pattern;
applying a solution containing an acid or a thermoacid generator to the substrate on which the first resist pattern is formed, so as to cover the first resist pattern, to form a structure having the first resist pattern and a first layer covering the first resist pattern;
heating the structure to change the solubility of the first resist pattern in an organic solvent under action of the acid or under action of acid generated from the thermoacid generator; and
after the heating, developing the structure with the organic solvent to remove a region of the first resist pattern other than the region of the first resist pattern where the solubility in the organic solvent is changed, so as to form a second resist pattern.

2. The method of forming a resist pattern according to claim 1 , including:
applying a positive resist composition to a substrate to form a positive resist film, exposing the positive resist film and subjecting the positive resist film to an alkali development to form a first resist pattern;
applying a solution containing an acid or a thermoacid generator to the substrate on which the first resist pattern is formed, so as to cover the first resist pattern, to form a structure having the first resist pattern and a first layer covering the first resist pattern;
applying a solution containing a solvent to cover the structure;
heating the structure to change the solubility of the first resist pattern in an organic solvent under action of the acid or under action of acid generated from the thermoacid generator; and
after the heating, developing the structure with the organic solvent to remove a region of the first resist pattern other than the region of the first resist pattern where the solubility in the organic solvent is changed, so as to form a second resist pattern.

3. The method of forming a resist pattern according to claim 2 , wherein the solution containing a solvent further contains an acid diffusion control agent.

4. The method of forming a resist pattern according to claim 3 , wherein the acid diffusion control agent contains a nitrogen-containing organic compound.

5. The method of forming a resist pattern according to claim 3 , wherein the solution containing the acid diffusion control agent contains a structural unit (a4) having an acid non-dissociable cyclic group.

6. The method of forming a resist pattern according to claim 3 , wherein the solution containing the acid diffusion control agent contains a low-polarity solvent.

7. The method of forming a resist pattern according to claim 1 , including:
applying a positive resist composition to a substrate to form a positive resist film, exposing the positive resist film and subjecting the positive resist film to an alkali development to form a first resist pattern;
applying a solution containing an acid or a thermoacid generator to the substrate on which the first resist pattern is formed, so as to cover the first resist pattern, to form a structure having the first resist pattern and a first layer covering the first resist pattern;
heating the structure to change the solubility of the first resist pattern in an organic solvent under action of the acid or under action of acid generated from the thermoacid generator;
after the heating, developing the structure with the organic solvent to remove a region of the first resist pattern other than the region of the first resist pattern where the solubility in the organic solvent is changed, so as to form a second resist pattern; and
applying a pattern reversing composition containing an organic solvent that does not dissolve the second resist pattern to form a pattern reversing film, and subjecting the pattern reversing film to an alkali development using an alkali developing solution to remove the second resist pattern and conduct patterning of the pattern reversing film, so as to form a third pattern.

8. The method of forming a resist pattern according to claim 7 , wherein the pattern reversing composition contains a resin component (A″1), and the resin component (A″1) comprises a structural unit having a silicon atom.

9. The method of forming a resist pattern according to claim 1 , including:
applying a positive resist composition to a substrate to form a positive resist film, exposing the positive resist film and subjecting the positive resist film to an alkali development to form a first resist pattern;
applying a solution containing an acid or a thermoacid generator to the substrate on which the first resist pattern is formed, so as to cover the first resist pattern, to form a structure having the first resist pattern and a first layer covering the first resist pattern;
heating the structure to change the solubility of the first resist pattern in an organic solvent under action of the acid or under action of acid generated from the thermoacid generator; and
after the heating, developing the structure with the organic solvent to remove a region of the first resist pattern other than the region of the first resist pattern where the solubility in the organic solvent is changed, so as to form a second resist pattern as a split pattern,
wherein the positive resist composition comprises an acid diffusion control agent, and
the acid diffusion control agent contains an acid having an acid dissociation constant (pKa) of 3.0 or more.

10. The method of forming a resist pattern according to claim 9 , including:
applying a positive resist composition to a substrate to form a positive resist film, exposing the positive resist film, and subjecting the positive resist film to an alkali development to form a first resist pattern;
applying a solution containing an acid or a thermoacid generator to the substrate on which the first resist pattern is formed, so as to cover the first resist pattern, to form a structure having the first resist pattern and a first layer covering the first resist pattern;
applying a solution containing an acid diffusion control agent to cover the structure;
heating the structure to change the solubility of the first resist pattern in an organic solvent under action of the acid or under action of acid generated from the thermoacid generator; and
after the heating, developing the structure with the organic solvent to remove a region of the first resist pattern other than the region of the first resist pattern where the solubility in the organic solvent is changed, so as to form a second resist pattern as a split pattern.

11. The method of forming a resist pattern according to claim 9 , wherein the acid diffusion control agent comprises a compound represented by any one of general formulae (d1-1) to (d1-3) shown below:

wherein in the general formulae (d1-1) to (d1-3),
Rd 1 to Rd 4 each independently represents a cyclic group which may have a substituent, a chain-like alkyl group which may have a substituent or a chain-like alkenyl group which may have a substituent, provided that, the carbon atom adjacent to the sulfur atom within the Rd 2 in the formula (d1-2) does not have more than two fluorine atoms bonded thereto; Yd 1 represents a single bond or a divalent linking group; M m+ each independently represents an organic cation having a valency of m; and m represents 1.

12. The method of forming a resist pattern according

Assignees

• Tokyo Ohka Kogyo Co Ltd

Inventors

• Hori Yoichi
• Mori Takayoshi
• Watanabe Ryoji
• Tsunoda Rikita

Classifications

• G03F7/0046

  with perfluoro compounds, e.g. for dry lithography (G03F7/0048 takes precedence) · CPC title

• C07D213/79

  Acids; Esters · CPC title

• C07D295/26

  Sulfur atoms · CPC title

• G03F7/30

  Imagewise removal using liquid means · CPC title

• G03F7/32

  Liquid compositions therefor, e.g. developers · CPC title