High resolution organic light-emitting diode devices, displays, and related method
US-9444050-B2 · Sep 13, 2016 · US
US9614191B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9614191-B2 |
| Application number | US-201314030776-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 18, 2013 |
| Priority date | Jan 17, 2013 |
| Publication date | Apr 4, 2017 |
| Grant date | Apr 4, 2017 |
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A method of manufacturing an organic-light emitting diode (OLED) display can include providing on a substrate a first electrode associated with a first sub-pixel and a second electrode associated with a second sub-pixel, wherein a gap is formed between the first electrode and the second electrode and wherein the first electrode and the second electrode are positioned in a well having boundaries defined by a confinement structure on the substrate. The method can also include depositing in the well with the electrodes positioned therein, active OLED material to form a substantially continuous layer of active OLED material that spans the boundaries of the well such that a surface of the layer of active OLED material that faces away from the substrate has a non-planar topography. The depositing can be via inkjet printing.
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What is claimed is: 1. A method of manufacturing an organic light-emitting diode (OLED) display comprising: providing on a substrate a first electrode associated with a first sub-pixel and a second electrode associated with a second sub-pixel, wherein a gap is formed between the first electrode and the second electrode and wherein the first electrode and the second electrode are positioned in a well having boundaries defined by a confinement structure on the substrate; and depositing in the well with the electrodes positioned therein, active OLED material to form a substantially continuous layer of active OLED material that spans and is contained within the boundaries of the well such that a surface of the layer of active OLED material that faces away from the substrate has a non-planar topography, wherein the depositing is via inkjet printing. 2. The method of claim 1 , wherein the layer of active OLED material has a substantially uniform thickness. 3. The method of claim 2 , wherein the layer of active OLED material includes local non-uniformities in thickness. 4. The method of claim 3 , wherein the local non-uniformities in thickness are within 5 μm-10 μm of edges of surface features in the well. 5. The method of claim 1 , the layer of active OLED material has a thickness less than a thickness of the first electrode and the second electrode. 6. The method of claim 1 , wherein the active OLED material comprises light-emissive material. 7. The method of claim 6 , wherein the light-emissive material has a light-emissive wavelength range that is the same for the first sub-pixel and the second sub-pixel. 8. The method of claim 1 , wherein the layer of active OLED material comprises two layers of active OLED materials including a light-emissive material and a hole conducting material. 9. The method of claim 8 , wherein the hole conducting material is at least one of a hole injecting material and a hole transporting material. 10. The method of claim 1 , wherein the first and second sub-pixels correspond to differing pixels. 11. The method of claim 1 , further comprising providing a structure on the substrate within the gap between the first electrode and the second electrode. 12. The method of claim 11 , wherein the structure comprises an electrically resistive material. 13. The method of claim 1 , further comprising depositing a definition layer on the substrate and a portion of the first electrode and the second electrode and then depositing the confinement structure over the definition layer. 14. The method of claim 13 , wherein the definition layer comprises an electrically resistive material. 15. The method of claim 13 , further comprising depositing a structure on the substrate in the gap between the first electrode and the second electrode. 16. The method of claim 15 , further comprising depositing a second definition layer on the structure. 17. The method of claim 1 , wherein the organic light-emissive display is a top emission display. 18. The method of claim 1 , wherein the display has a fill factor greater than 40%. 19. The method of claim 1 , wherein the display has a fill factor greater than 60%. 20. The method of claim 1 , wherein the display has a resolution of at least 100 ppi. 21. The method of claim 1 , wherein the display has a resolution of at least 300 ppi. 22. An organic light-emitting diode (OLED) display, comprising: a first electrode disposed on a substrate, wherein the first electrode is associated with a first sub-pixel; a second electrode disposed on the substrate and spaced from the first electrode to provide a gap between the first and second electrodes, wherein the second electrode is associated with a second sub-pixel; a confinement structure positioned on the substrate to define boundaries of a well containing the first electrode and the second electrode; and a substantially continuous active OLED material layer that spans and is contained within the boundaries of the well and is disposed over the first electrode and second electrode, wherein a surface of the active OLED material layer that faces away from the substrate has a non-planar topography. 23. The display of claim 22 , wherein the active OLED material layer has a substantially uniform thickness. 24. The display of claim 23 , wherein the active OLED material layer includes local non-uniformities. 25. The display of claim 24 , wherein the local non-uniformities in thickness are within 5 μm to 10 μm of edges of surface features in the well. 26. The display of claim 22 , wherein the active OLED material layer has a thickness less than a thickness of the first electrode and the second electrode. 27. The display of claim 22 , wherein the active OLED material layer comprises a light-emissive material. 28. The display of claim 27 , wherein the light-emissive material has a light-emissive wavelength range that is the same for the first sub-pixel and the second sub-pixel. 29. The display of claim 22 , wherein the active OLED material layer comprises two active OLED material layers including a light-emissive material layer and a hole conducting material layer. 30. The display of claim 29 , wherein the hole conducting material is chosen from at least one of a hole injecting material and a hole transporting material. 31. The display of claim 22 , wherein the first and second sub-pixels correspond to differing pixels. 32. The display of claim 22 , further comprising a structure disposed on the substrate within the gap between the first electrode and the second electrode. 33. The display of claim 32 , wherein the structure comprises an electrically resistive material. 34. The display of claim 22 , further comprising a definition layer disposed on the substrate over a portion of the first electrode and the second electrode, wherein the confinement structure is disposed over the definition layer. 35. The display of claim 34 , wherein the definition layer comprises an electrically resistive material. 36. The display of claim 34 , further comprising a structure disposed on the substrate in the gap between the first electrode and the second electrode. 37. The display of claim 36 , further comprising a second definition layer disposed over the structure. 38. The display of claim 22 , wherein the display is a top emission display. 39. The display of claim 22 , wherein the display is an active matrix device. 40. The display of claim 22 , wherein the display has a fill factor greater than 40%. 41. The display of claim 22 , wherein the display has a fill factor greater than 60%. 42. The display of claim 22 , wherein the display has a resolution of at least 100 ppi. 43. The display of claim 22 , wherein the display has a resolution of at least 300 ppi.
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