Semiconductor device and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-9614115-B2
Application number	US-201414503727-A
Country	US
Kind code	B2
Filing date	Oct 1, 2014
Priority date	Oct 16, 2013
Publication date	Apr 4, 2017
Grant date	Apr 4, 2017

Abstract

Provided is a semiconductor device that can suppress a leakage current more than has been achieved before. A semiconductor device 22 includes a first carrier holding layer 48 , which is arranged on a lower electrode 47 , is in contact with a lower electrode 47 via a first interface 49 , and includes majority carriers of one type, and a second carrier holding layer 57 , which is arranged on the first carrier holding layer 48 , defines a second interface 58 constituting a conduction path to the first carrier holding layer 48 , and includes majority carriers of the other type. The first interface 49 has its outline within the outline of the first carrier holding layer 48 when seen in a plan view in a direction that is orthogonal to a surface of the substrate, and the second interface 58 has its outline within the outline of the first carrier holding layer 48 when seen in the plan view.

First claim

What is claimed is:

1. A semiconductor device comprising:
a lower electrode arranged on a substrate;
a first carrier holding layer arranged on and contacting the lower electrode to define a first interface therebetween, and including a plurality of majority carriers of a first type;
a semiconductor layer arranged on the first carrier holding layer; and
a second carrier holding layer arranged on and contacting the semiconductor layer to define a second interface therebetween with a conduction path being defined by the semiconductor layer and the first carrier holding layer between the first and second interfaces, and including a plurality of majority carriers of a second type,
the first interface having an outline thereof within an outline of the first carrier holding layer when seen in a plan view in a direction that is orthogonal to a surface of the substrate on which the lower electrode is disposed,
the second interface having an outline thereof within the outline of the first carrier holding layer when seen in the plan view, and
at least a part of the first interface overlaps a part of the second interface when seen in the plan view.

2. The semiconductor device according to claim 1 ,
wherein a distance a between an end of the first interface and an end of the first carrier holding layer, and a distance b between an end of the second interface and the end of the first carrier holding layer have a relationship of b>a.

3. The semiconductor device according to claim 2 ,
wherein a difference between the distance b and the distance a is greater than 1 μm and less than 3 μm.

4. The semiconductor device according to claim 1 , further comprising
an insulating film that overlaps a part of the lower electrode that is outside the first interface along the outline of the first interface, and supports, on the lower electrode, a part of the first carrier holding layer.

5. The semiconductor device according to claim 4 ,
wherein the insulating film has a thickness of 300 nm or more, measured from the surface of the lower electrode.

6. The semiconductor device according to claim 1 ,
wherein the first carrier holding layer has a length of from 5 μm or more to 20 μm or less, measured along the surface of the lower electrode.

7. The semiconductor device according to claim 1 ,
wherein the second interface is defined between the first carrier holding layer and the second carrier holding layer.

8. A photoelectric conversion device comprising the semiconductor device according to claim 1 .

9. An electronic device comprising the semiconductor device according to claim 1 .

Assignees

• Seiko Epson Corp

Inventors

• Kudo Manabu

Classifications

• G06V10/143

  Sensing or illuminating at different wavelengths · CPC title

• H01L27/14692

  Electricity · mapped topic

• H01L27/1446

  Electricity · mapped topic

• G06K9/2018

  Physics · mapped topic

• H01L31/035281

  Electricity · mapped topic