CIGS film, and CIGS solar cell employing the same

Patent metadata

Field	Value
Publication number	US-9614111-B2
Application number	US-201414766552-A
Country	US
Kind code	B2
Filing date	Jan 24, 2014
Priority date	Feb 12, 2013
Publication date	Apr 4, 2017
Grant date	Apr 4, 2017

Abstract

The present invention provides a CIGS film substantially free from oxidation of a front surface thereof and a CIGS solar cell employing the CIGS film and substantially free from reduction and variation in conversion efficiency. The CIGS film, which is used as a light absorbing layer for the CIGS solar cell, includes: a first region having a Ga/(In+Ga) ratio progressively reduced along its thickness toward a predetermined first thickness position from a back surface of the CIGS film; a second region having a Ga/(In+Ga) ratio progressively increased along its thickness toward a predetermined second thickness position from the first region; and a third region provided on the second region and having a Ga/(In+Ga) ratio progressively reduced along its thickness toward the front surface of the CIGS film.

First claim

What is claimed is:

1. A copper indium gallium selenide (CIGS) film to be used as a light absorbing layer for a CIGS solar cell, the CIGS film comprising:
a first region having a Ga/(In+Ga) ratio progressively reduced along its thickness toward a predetermined thickness position from a back surface of the CIGS film;
a second region provided on the first region and having a Ga/(In+Ga) ratio progressively increased along its thickness toward a front surface of the CIGS film; and
a third region provided on the second region and having a Ga/(In+Ga) ratio progressively reduced along its thickness toward the front surface of the CIGS film;
wherein the Ga/(In+Ga) ratios are each defined as a ratio of a gallium (Ga) atomic number concentration to a sum of an indium (In) atomic number concentration and the gallium (Ga) atomic number concentration,
wherein the first region, the second region and the third region are provided on the back surface in that order,
wherein the first region extends continuously from the back surface to the second region,
wherein the second region extends continuously from the first region to the third region,
wherein the third region extends continuously from the second region to the front surface,
wherein the Ga/(In+Ga) ratio in the second region has a peak value of 0.3 to 0.6, and
wherein the Ga/(In+Ga) ratio in the third region has a reduction of 0.02 to 0.3.

2. A copper indium gallium selenide (CIGS) film, comprising:
a first region having a Ga/(In+Ga) ratio progressively reduced along its thickness toward a predetermined thickness position from a back surface of the CIGS film;
a second region provided on the first region and having a Ga/(In+Ga) ratio progressively increased along its thickness toward a front surface of the CIGS film; and
a third region provided on the second region and having a Ga/(In+Ga) ratio progressively reduced along its thickness toward the front surface of the CIGS film;
wherein the Ga/(In+Ga) ratios are each defined as a ratio of a gallium (Ga) atomic number concentration to a sum of an indium (In) atomic number concentration and the gallium (Ga) atomic number concentration,
wherein the first region, the second region and the third region are provided on the back surface in that order,
wherein the first region extends continuously from the back surface to the second region,
wherein the second region extends continuously from the first region to the third region,
wherein the third region extends continuously from the second region to the front surface, and
wherein the third region has a thickness of 30 to 200 nm.

3. A copper indium gallium selenide (CIGS) solar cell comprising:
a substrate; and
a rear electrode, a light absorbing layer, a buffer layer and a transparent electrically-conductive film provided in this order over the substrate;
wherein the light absorbing layer is the CIGS film according to claim 1 , and
wherein the CIGS film has a back surface located adjacent to the rear electrode.

4. A copper indium gallium selenide (CIGS) solar cell comprising:
a substrate; and
a rear electrode, a light absorbing layer, a buffer layer and a transparent electrically-conductive film provided in this order over the substrate;
wherein the light absorbing layer is the CIGS film according to claim 2 , and
wherein the CIGS film has a back surface located adjacent to the rear electrode.

Assignees

• Nitto Denko Corp

Inventors

• TERAJI Seiki
• Nishii Hiroto
• Watanabe Taichi
• Yamamoto Yusuke
• Kawamura Kazunori
• Minemoto Takashi
• CHANTANA Jakapan

Classifications

• H10P14/3436

  being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds · CPC title

• H10P14/3254

  Graded layers · CPC title

• H10P14/3236

  being chalcogenide semiconducting materials not being oxides, e.g. ternary compounds · CPC title

• H01L21/02568

  Electricity · mapped topic

• Y02E10/543

  Solar cells from Group II-VI materials · CPC title