Semiconductor device and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-9614103-B2
Application number	US-201615002002-A
Country	US
Kind code	B2
Filing date	Jan 20, 2016
Priority date	Jan 22, 2015
Publication date	Apr 4, 2017
Grant date	Apr 4, 2017

Abstract

A semiconductor device according to an embodiment includes a first region including an oxide semiconductor containing indium (In), gallium (Ga), and zinc (Zn), a second region and a third region between which the first region is disposed, at least one of the second region and the third region having a higher indium (In) concentration than the first region and containing at least one metal element from the group consisting of titanium (Ti), tungsten (W), copper (Cu), zinc (Zn), aluminum (Al), lead (Pb), and tin (Sn), an electrode; and an insulating layer disposed between the first region and the electrode.

First claim

What is claimed is:

1. A semiconductor device comprising:
a first region including an oxide semiconductor containing indium (In), gallium (Ga), and zinc (Zn);
a second region and a third region between which the first region is disposed, at least one of the second region and the third region having a higher indium (In) concentration than the first region and containing at least one metal element from the group consisting of titanium (Ti), tungsten (W), copper (Cu), zinc (Zn), aluminum (Al), lead (Pb), and tin (Sn);
an electrode; and
an insulating layer disposed between the first region and the electrode,
wherein a zinc (Zn) concentration in the at least one of the second region and the third region is lower than a zinc (Zn) concentration in the first region.

2. The device according to claim 1 , wherein an oxygen concentration in the at least one of the second region and the third region is lower than an oxygen concentration in the first region.

3. A semiconductor device comprising:
a first region including an oxide semiconductor containing indium (In), gallium (Ga), and zinc (Zn);
a second region and a third region between which the first region is disposed, at least one of the second region and the third region having a higher indium (In) concentration than the first region and containing at least one metal element from the group consisting of titanium (Ti), tungsten (W), copper (Cu), zinc (Zn), aluminum (Al), lead (Pb), and tin (Sn);
an electrode; and
an insulating layer disposed between the first region and the electrode,
wherein a gallium (Ga) concentration in the at least one of the second region and the third region is lower than a gallium (Ga) concentration in the first region.

4. A semiconductor device comprising:
a first region including an oxide semiconductor containing indium (In), gallium (Ga), and zinc (Zn);
a second region and a third region between which the first region is disposed, at least one of the second region and the third region having a higher indium (In) concentration than the first region and containing at least one metal element from the group consisting of titanium (Ti), tungsten (W), copper (Cu), zinc (Zn), aluminum (Al), lead (Pb), and tin (Sn);
an electrode; and
an insulating layer disposed between the first region and the electrode,
wherein the at least one of the second region and the third region is made of polycrystalline metal.

5. The device according to claim 1 , wherein the first region is amorphous.

6. The device according to claim 1 , further comprising layers disposed on both sides of the electrode.

7. A semiconductor device comprising:
a first region including an oxide semiconductor containing indium (In), gallium (Ga), and zinc (Zn);
a second region and a third region between which the first region is disposed, at least one of the second region and the third region having a higher indium (In) concentration than the first region and containing at least one metal element from the group consisting of titanium (Ti), tungsten (W), copper (Cu), zinc (Zn), aluminum (Al), lead (Pb), and tin (Sn),
an electrode;
an insulating layer disposed between the first region and the electrode; and
a region having a lower indium (In) concentration than the first region between the first region and the at least one of the second region and the third region.

8. The device according to claim 1 , wherein the oxide semiconductor contains at least one element from the group consisting of hafnium (Hf), tin (Sn), aluminum (Al), zirconium (Zr), lithium (Li), scandium (Sc), and nitrogen (N).

9. A method for manufacturing a semiconductor device comprising:
forming an oxide semiconductor layer containing indium (In), gallium (Ga), and zinc (Zn);
forming an insulating layer on the oxide semiconductor layer;
forming an electrode on the insulating layer;
forming a metal film containing at least one metal element from the group consisting of titanium (Ti), tungsten (W), copper (Cu), zinc (Zn), aluminum (Al), lead (Pb), and tin (Sn) on portions of the oxide semiconductor layer, the portions being exposed on both sides of the electrode;
performing a heat treatment in a nonoxidizing atmosphere for one second or more and five minutes or less and reacting the metal film with the oxide semiconductor layer to form a reacted layer; and
removing an unreacted portion of the metal film by wet etching.

10. The method according to claim 9 , further comprising forming layers on both sides of the electrode before the forming the metal film.

11. The method according to claim 9 , wherein the reacted layer has a higher indium (In) concentration than a portion of the oxide semiconductor layer facing to the electrode and the reacted layer contains the metal element.

12. The method according to claim 9 , wherein temperature of the heat treatment is 200° C. or higher and 400° C. or lower.

13. The method according to claim 9 , further comprising reducing an In concentration of the portions of the oxide semiconductor layer by a plasma treatment or a heat treatment after the forming the electrode and before the forming the metal film.

14. The device according to claim 7 , wherein an oxygen concentration in the at least one of the second region and the third region is lower than an oxygen concentration in the first region.

15. The device according to claim 7 , wherein the first region is amorphous.

16. The device according to claim 7 , further comprising layers disposed on both sides of the electrode.

17. The device according to claim 7 , wherein the oxide semiconductor contains at least one element from the group consisting of hafnium (Hf), tin (Sn), aluminum (Al), zirconium (Zr), lithium (Li), scandium (Sc), and nitrogen (N).

Assignees

• Toshiba Kk

Inventors

• Ota Kensuke
• Irisawa Toshifumi
• Saitoh Masumi
• Sakuma Kiwamu

Classifications

• H10P50/667

  by liquid etching only · CPC title

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P50/642

  Chemical etching · CPC title

• H01L21/30604

  Electricity · mapped topic

• H01L21/32134

  Electricity · mapped topic