High mobility transport layer structures for rhombohedral Si/Ge/SiGe devices

Patent metadata

Field	Value
Publication number	US-9614026-B2
Application number	US-201414202699-A
Country	US
Kind code	B2
Filing date	Mar 10, 2014
Priority date	Mar 13, 2013
Publication date	Apr 4, 2017
Grant date	Apr 4, 2017

Abstract

An electronic device includes a trigonal crystal substrate defining a (0001) C-plane. The substrate may comprise Sapphire or other suitable material. A plurality of rhombohedrally aligned SiGe (111)-oriented crystals are disposed on the (0001) C-plane of the crystal substrate. A first region of material is disposed on the rhombohedrally aligned SiGe layer. The first region comprises an intrinsic or doped Si, Ge, or SiGe layer. The first region can be layered between two secondary regions comprising n+doped SiGe or n+doped Ge, whereby the first region collects electrons from the two secondary regions.

First claim

The invention claimed is:

1. An electronic device, comprising:
a trigonal crystal substrate defining a (0001) C-plane;
a rhombohedrally aligned buffer layer comprising a plurality of rhombohedrally aligned (111)-oriented crystals disposed on the (0001) C-plane of the crystal substrate, wherein the plurality of rhombohedrally aligned (111)-oriented crystals comprise a material selected from the group consisting of group IV semiconductors and alloys of group IV semiconductors;
at least one layer comprising a first region disposed on the rhombohedrally aligned buffer layer, the first region comprising a p+doped SiGe layer having a thickness of less than about 100 nm and a secondary region disposed on the first region, the secondary region comprising a p-doped Ge, or intrinsic Ge material to form a quantum well structure for the fast transport of holes, such that the secondary region collects holes from the first region; and
wherein additional layers have the first region disposed on the secondary region and the secondary region disposed on the first region.

2. The device of claim 1 , wherein the secondary region has at least two times higher hole mobility than the adjacent first region.

3. The device of claim 1 , wherein the trigonal crystal substrate comprises a Sapphire material.

4. The device of claim 1 , wherein the rhombohedrally aligned (111)-oriented crystals comprise a group IV semiconductor material.

Assignees

• The Us Nat Aeronautics And Space Administration
• Nasa

Inventors

• Choi Sang Hyouk
• Park Yeonjoon
• King Glen C
• Kim Hyun-Jung
• Lee Kunik

Classifications

• H10P14/3448

  Delta-doping · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• H10P14/3258

  Crystal orientation · CPC title

• H10P14/3211

  Silicon, silicon germanium or germanium · CPC title

• H10P14/2926

  Crystal orientations · CPC title