Ultralow power carbon nanotube logic circuits and method of making same

Patent metadata

Field	Value
Publication number	US-9613879-B2
Application number	US-201414511705-A
Country	US
Kind code	B2
Filing date	Oct 10, 2014
Priority date	Oct 11, 2013
Publication date	Apr 4, 2017
Grant date	Apr 4, 2017

Abstract

In one embodiment, a complementary metal-oxide-semiconductor (CMOS) logic device formed with single-walled carbon nanotubes (SWCNTs) includes: at least one p-type metal-oxide-semiconductor (PMOS) thin-film transistor (TFT) formed with the SWCNTs, and at least one n-type metal-oxide-semiconductor (NMOS) TFT formed with the SWCNTs, where each of the at least one PMOS TFT and the at least one NMOS TFT has a gate, a source and a drain. The gate of each of the at least one PMOS TFT and the gate of each of the at least one NMOS TFT is configured to alternatively receive at least one input voltage, and respectively includes a local metallic gate structure formed of a metal. At least one of the drain of the at least one PMOS TFT and the drain of the at least one NMOS TFT is configured to output an output voltage V OUT .

First claim

What is claimed is:

1. A complementary metal-oxide-semiconductor (CMOS) logic device formed with single-walled carbon nanotubes (SWCNTs), comprising:
at least one p-type metal-oxide-semiconductor (PMOS) thin-film transistor (TFT) formed with the SWCNTs, wherein each of the at least one PMOS TFT has a gate, a source and a drain; and
at least one n-type metal-oxide-semiconductor (NMOS) TFT formed with the SWCNTs, wherein each of the at least one NMOS TFT has a gate, a source and a drain,
wherein the gate of each of the at least one PMOS TFT and the gate of each of the at least one NMOS TFT is configured to alternatively receive at least one input voltage;
wherein at least one of the drain of the at least one PMOS TFT and the drain of the at least one NMOS TFT is configured to output an output voltage V OUT ;
wherein the gate of each of the at least one PMOS TFT and the gate of each of the at least one NMOS TFT respectively comprises a local metallic gate structure formed of a metal;
wherein a threshold voltage of the at least one PMOS TFT and a threshold voltage of the at least one NMOS TFT are symmetric; and
wherein each of the at least one NMOS TFT is chemically doped with benzyl viologen.

2. The CMOS logic device of claim 1 , wherein a linear tube density of the SWCNTs in the at least one PMOS TFT and the at least one NMOS TFT is about 18 nanotubes/μm.

3. The CMOS logic device of claim 1 , wherein the metal of the local metal gate structure is nickel (Ni).

4. The CMOS logic device of claim 1 , having a static power consumption of less than about 0.1 nW in a static state, and a peak power consumption of about 10 nW in a transfer state.

5. The CMOS logic device of claim 1 , being a logic inverter.

6. The CMOS logic device of claim 5 , wherein
the at least one PMOS TFT comprises a first PMOS TFT;
the at least one NMOS TFT comprises a first NMOS TFT;
the at least one input voltage comprises a common input voltage V IN ;
the gate of the first PMOS TFT and the gate of the first NMOS TFT are respectively electrically connected to a common input voltage line for alternatively receiving the common input voltage V IN ;
the drain of the first PMOS TFT and the drain of the first NMOS TFT are respectively electrically connected to a common output voltage line for alternatively outputting the output voltage V OUT ;
the source of the first PMOS TFT is connected to a power supply V DD ; and
the source of the first NMOS TFT is connected to ground.

7. The CMOS logic device of claim 6 , having a low noise margin (NM) of about 0.32 V DD , and a high NM of about 0.54 V DD .

8. The CMOS logic device of claim 1 , being a logic NAND gate.

9. The CMOS logic device of claim 8 , wherein
the at least one PMOS TFT comprises a first PMOS TFT and a second PMOS TFT;
the at least one NMOS TFT comprises a first NMOS TFT and a second NMOS TFT;
the at least one input voltage comprises a first input voltage V A and a second input voltage V B ;
the gate of the first PMOS TFT and the gate of the first NMOS TFT are respectively electrically connected to a first common input voltage line for alternatively receiving the first input voltage V A ;
the gate of the second PMOS TFT and the gate of the second NMOS TFT are respectively electrically connected to a second common input voltage line for alternatively receiving the second input voltage V B ;
the drain of the first PMOS TFT, the drain of the second PMOS TFT, and the drain of the first NMOS TFT are respectively electrically connected to a common output voltage line for outputting the output voltage V OUT ;
the source of the first PMOS TFT and the source of the second PMOS TFT are respectively electrically connected to a power supply V DD ;
the source of the first NMOS TFT is electrically connected to the drain of the second NMOS TFT; and
the source of the second NMOS TFT is electrically connected to ground.

10. The CMOS logic device of claim 1 , being a logic NOR gate.

11. The CMOS logic device of claim 10 , wherein
the at least one PMOS TFT comprises a first PMOS TFT and a second SWCNT PMOS TFT;
the at least one NMOS TFT comprises a first NMOS TFT and a second NMOS TFT;
the at least one input voltage comprises a first input voltage V A and a second input voltage V B ;
the gate of the first PMOS TFT and the gate of the first NMOS TFT are respectively electrically connected to a first common input voltage line for alternatively receiving the first input voltage V A ;
the gate of the second PMOS TFT and the gate of the second NMOS TFT are respectively electrically connected to a second common input voltage line for alternatively receiving the second input voltage V B ;
the drain of the first PMOS TFT, the drain of the first NMOS TFT, and the drain of the second NMOS TFT are respectively electrically connected to a common output voltage line for outputting the output voltage V OUT ;
the source of the second PMOS TFT is electrically connected to a power supply V DD ;
the source of the first PMOS TFT is electrically connected to the drain of the second PMOS TFT; and
the source of the first NMOS TFT and the source of the second NMOS TFT are respectively electrically connected to ground.

12. The CMOS logic device of claim 1 , further comprising:
a first encapsulation layer covering the at least one PMOS TFT;
a second encapsulation layer covering the at least one NMOS TFT and the first encapsulation layer.

13. The CMOS logic device of claim 12 , wherein the first encapsulation layer is formed by a photoresist, and the second encapsulation layer is formed by Al 2 O 3 .

14. A complementary metal-oxide-semiconductor (CMOS) logic device formed with carbon nanotubes (CNTs), comprising:
at least one p-type metal-oxide-semiconductor (PMOS) transistor formed with the CNTs, wherein each of the at least one PMOS transistor has a gate, a source and a drain; and
at least one n-type metal-oxide-semiconductor (NMOS) transistor formed with the CNTs, wherein each of the at least one NMOS transistor has a gate, a source and a drain,
wherein the gate of each of the at least one PMOS transistor and the gate of each of the at least one NMOS transistor is configured to alternatively receive at least one input voltage;
wherein at least one of the drain of the at least one PMOS transistor and the drain of the at least one NMOS transistor is configured to output an output voltage V OUT ;
wherein the gate of each of the at least one PMOS transistor and the gate of each of the at least one NMOS transistor respectively comprises a local metallic gate structure formed of a metal;
wherein a threshold voltage of the at least one PMOS TFT and a threshold voltage of the at least one NMOS TFT are symmetric; and
wherein each of the at least one NMOS TFT is chemically doped with benzyl viologen.

15. The CMOS logic device of claim 14 , wherein each of the at least one PMOS transistor and each of the at least one NMOS transistor is a thin-film transistor (TFT).

16. The CMOS logic device of claim 14 , wherein the metal of the local metal gate structure is nickel (Ni).

17. The CMOS logic device of claim 14 , having a static power consumption of less than about 0.1 nW in a static state, and a peak power consumption of about 10 nW in a transfer state.

18. The CMOS logic device of claim 14 , wherein the CNTs are single-walled CNTs (SWCNTs).

19. The CMOS logic device of claim 18 , wherein a linear tube density of the SWCNTs in the at least one PMOS transistor and the at least one NMOS transistor is about 18 nanotu

Assignees

• Univ Northwestern
• Univ Minnesota
• Regents of the Univerity of Minnesota

Inventors

• Hersam Mark C
• Geier Michael L
• Prabhumirashi Pradyumna L
• Xu Weichao
• Kim Hyungil

Classifications

• H10W74/121

  by multiple encapsulations, e.g. by a thin protective coating and a thick encapsulation · CPC title

• H01L51/0558

  Electricity · mapped topic

• H01L2924/00

  Electricity · mapped topic

• H01L2924/0002

  Electricity · mapped topic

• H01L23/3135 Primary

  Electricity · mapped topic