Nonvolatile memory device including dummy wordline, memory system, and method of operating memory system
US-9367417-B2 · Jun 14, 2016 · US
US9613708B1 · US · B1
| Field | Value |
|---|---|
| Publication number | US-9613708-B1 |
| Application number | US-201615001886-A |
| Country | US |
| Kind code | B1 |
| Filing date | Jan 20, 2016 |
| Priority date | Oct 7, 2015 |
| Publication date | Apr 4, 2017 |
| Grant date | Apr 4, 2017 |
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A data storage device including a flash memory and a controller. The flash memory includes a plurality of pages and a plurality of word lines, wherein each of the word lines controls at least two of the pages. The controller reads a first page of the pages in response to a read command, wherein the first page is controlled by a first word line of the word lines, and the controller further writes dummy data into the pages controlled by the first word line other than the first page when a predetermined condition is satisfied, wherein the predetermined condition includes that the first word line is not close.
Opening claim text (preview).
What is claimed is: 1. A data storage device, comprising: a flash memory, comprising a plurality of pages and a plurality of word lines, wherein each of the word lines controls at least two of the pages; and a controller, reading a first page of the pages in response to a read command, wherein the first page is controlled by a first word line of the word lines, and the controller further writes dummy data into the pages controlled by the first word line other than the first page when a predetermined condition is satisfied, wherein the predetermined condition comprises that the first word line is not close and the first page cannot be successfully read. 2. The data storage device as claimed in claim 1 , wherein the controller re-reads the first page after the dummy data is written into the pages controlled by the first word line other than the first page. 3. The data storage device as claimed in claim 2 , wherein the controller transmits data obtained by reading the first page to a host according to the read command when the first page is successfully re-read. 4. The data storage device as claimed in claim 1 , wherein the controller further repeatedly reads the first page according to a plurality of read voltages of a read-retry table, wherein the predetermined condition further comprises that all of the read voltages cannot successfully read the first page. 5. A data maintenance method, applied to a data storage device having a flash memory, wherein the flash memory comprises a plurality of pages and a plurality of word lines, each of the word lines controls at least two of the pages, and the data maintenance method comprises: receiving a read command, wherein the read command indicates reading a first page of the pages, and the first page is controlled by a first word line of the word lines; and writing dummy data into the pages controlled by the first word line other than the first page when a predetermined condition is satisfied, wherein the predetermined condition comprises that the first word line is not close and the first page cannot be successfully read. 6. The data maintenance method as claimed in claim 5 , further comprising re-reading the first page after the dummy data is written into the pages controlled by the first word line other than the first page. 7. The data maintenance method as claimed in claim 6 , further comprising transmitting data obtained by reading the first page to a host according to the read command when the first page is successfully re-read. 8. The data maintenance method as claimed in claim 5 , further comprising repeatedly reading the first page according to a plurality of read voltages of a read-retry table, wherein the predetermined condition further comprises that all of the read voltages cannot successfully read the first page.
with adaption or trimming of parameters · CPC title
Vertical data movement, i.e. input-output transfer; data movement between one or more hosts and one or more storage devices · CPC title
Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP] · CPC title
in voltage or current generators · CPC title
using error correcting codes [ECC] or parity check · CPC title
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