Silicon photonic heater-modulator
US-9081215-B1 · Jul 14, 2015 · US
US9612458B1 · US · B1
| Field | Value |
|---|---|
| Publication number | US-9612458-B1 |
| Application number | US-201414260175-A |
| Country | US |
| Kind code | B1 |
| Filing date | Apr 23, 2014 |
| Priority date | Apr 23, 2014 |
| Publication date | Apr 4, 2017 |
| Grant date | Apr 4, 2017 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
A resonant photonic device is provided. The device comprises an optical waveguiding element, such as an optical resonator, that includes a diode junction region, two signal terminals configured to apply a bias voltage across the junction region, and a heater laterally separated from the optical waveguiding element. A semiconductor electrical barrier element is juxtaposed to the heater. A metallic strip is electrically and thermally connected at one end to a signal terminal of the optical waveguiding element and thermally connected at another end to the barrier element.
Opening claim text (preview).
What is claimed: 1. A photonic device, comprising: an optical waveguiding element comprising a diode junction region and two signal terminals configured to apply a bias voltage across the junction region; at least one heater laterally separated from the optical waveguiding element; an electrically discontinuous, thermally conductive path between the heater and the optical waveguiding element; and a dielectric layer that overlies the optical waveguiding element and the heater, wherein the thermally conductive path comprises a metallic film that overlies the dielectric layer and is thermally connected to the optical waveguiding element and to the heater by vertical metal connective elements. 2. The photonic device of claim 1 , wherein: the thermally conductive path includes a semiconductor electrical barrier element juxtaposed to the heater; and the metallic film is electrically and thermally connected at one end to a waveguiding element terminal and thermally connected at another end to the barrier element. 3. The photonic device of claim 2 , wherein: the optical waveguiding element is an optical resonator; and the metallic film is electrically and thermally connected at one end to a resonator terminal and thermally connected at another end to the barrier element. 4. The photonic device of claim 3 , wherein the optical resonator and the heater are defined in silicon on a silicon or SOI substrate. 5. The photonic device of claim 2 , wherein the heater has two electrical terminals that are both distinct from the signal terminals. 6. The photonic device of claim 2 , wherein the electrical barrier element comprises substantially undoped semiconductor. 7. The photonic device of claim 2 , wherein the photonic device is an optical modulator. 8. The photonic device of claim 2 , wherein the photonic device is an optical filter. 9. The photonic device of claim 2 , wherein the photonic device is an optical switch. 10. The photonic device of claim 2 , wherein the photonic device is a silicon-germanium (SiGe) multiple quantum well (MQW) modulator. 11. The photonic device of claim 2 , wherein: the device comprises two heaters laterally separated from the waveguiding element; one of said heaters is associated with a p-type side of the diode junction region; and one of said heaters is associated with an n-type side of the diode junction region. 12. The photonic device of claim 1 , wherein the optical waveguiding element is an optical resonator. 13. The photonic device of claim 1 , wherein the optical waveguiding element is a silicon-germanium (SiGe) multiple quantum well (MQW) modulator.
in an optical waveguide structure (G02F1/017, {G02F1/2257} take precedence) · CPC title
wavelength filtering · CPC title
Loop resonators · CPC title
in optical waveguides, not otherwise provided for in this subclass · CPC title
Evanescent coupling to a resonator cavity, i.e. between a waveguide mode and a resonant mode of the cavity (wavelength selective means based on resonator cavity coupled non-evanescently G02B6/29356, G02B6/29358) · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.