Semiconductor device

Patent metadata

Field	Value
Publication number	US-9608609-B2
Application number	US-201415029687-A
Country	US
Kind code	B2
Filing date	Oct 23, 2014
Priority date	Oct 31, 2013
Publication date	Mar 28, 2017
Grant date	Mar 28, 2017

Abstract

A semiconductor device includes a transistor, a diode, a sense transistor, a sense diode, a resistor, and a clamp circuit. The diode is connected in inverse parallel to the transistor. The resistor is connected at one end of the resister to an emitter of the sense transistor and an anode of the sense diode, and is connected at the other end of the resister to an emitter of the transistor and an anode of the diode. The clamp circuit is configured to clamp a voltage that is generated in the resistor when a sense diode current flows. A ratio of a sense diode current to a current flowing to the diode is larger than a ratio of a sense current to a current flowing to the transistor.

First claim

What is claimed is:

1. A semiconductor device comprising:
a transistor;
a diode that is connected in inverse parallel to the transistor;
a sense transistor that is configured to generate a sense current corresponding to a current flowing to the transistor;
a sense diode that is configured to generate a sense diode current corresponding to a current flowing to the diode;
a resistor that is connected at one end of the resister to an emitter of the sense transistor and an anode of the sense diode, and that is connected at the other end of the resister to an emitter of the transistor and an anode of the diode; and
a clamp circuit that is configured to clamp a voltage that is generated in the resistor when the sense diode current flows, wherein
a ratio of the sense diode current to the current flowing to the diode is larger than a ratio of the sense current to the current flowing to the transistor.

2. The semiconductor device according to claim 1 , wherein
the clamp circuit has a PN junction whose forward direction is identical to a forward direction of the sense diode.

3. The semiconductor device according to claim 2 , wherein
the PN junction is arranged in parallel with the resistor.

4. The semiconductor device according to claim 2 , wherein
the clamp circuit is equipped with a switching element that has the PN junction in parallel with the switching element.

5. The semiconductor device according to claim 4 , further comprising
a clamp control circuit that is configured to turn on the switching element when the sense diode current flows.

6. The semiconductor device according to claim 5 , wherein
the clamp control circuit is configured to turn on the switching element when it is detected that the sense diode current starts flowing, or when it is detected that the sense current stops flowing.

7. The semiconductor device according to claim 5 , wherein
the clamp control circuit is configured to turn off the switching element when the sense current flows.

8. The semiconductor device according to claim 7 , wherein
the clamp control circuit is configured to turn off the switching element when it is detected that the sense diode current stops flowing, or when it is detected that the sense current starts flowing.

9. The semiconductor device according to claim 5 , wherein
the clamp control circuit has a monitor circuit that is configured to monitor a current flowing to the switching element, and
the clamp control circuit is configured to control driving of the switching element based on a result monitored by the monitor circuit.

10. The semiconductor device according to claim 9 , wherein
the monitor circuit has a monitor resistor to which a current corresponding to the current flowing to the switching element flows.

11. The semiconductor device according to claim 10 , wherein
the monitor circuit has a control element that is configured to control the current flowing to the monitor resistor in synchronization with turning on/off of the switching element.

12. The semiconductor device according to claim 2 , wherein
the clamp circuit has a Zener diode in series with the PN junction,

a forward direction of the Zener diode is reverse to the forward direction of the sense diode.

13. The semiconductor device according to claim 1 , further comprising:
a control unit that controls driving of the transistor based on a detection result of a sense voltage generated by the resistor.

14. The semiconductor device according to claim 13 , wherein
the control unit is configured to turn off the transistor when a current flows to the diode.

15. The semiconductor device according to claim 14 , wherein
the control unit is configured to turn off the transistor even upon receiving a command to turn on the transistor, when a current flows to the diode.

16. The semiconductor device according to claims 13 , wherein
the control unit is configured to turn off the transistor when it is detected at least either that a current flows to the diode or that a current equal to or larger than a predetermined value flows to the transistor.

Assignees

• Toyota Motor Co Ltd

Inventors

• Wasekura Masaki

Classifications

• H03K17/18

  Modifications for indicating state of switch · CPC title

• H03K17/567

  Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT · CPC title

• H03K17/14

  Modifications for compensating variations of physical values, e.g. of temperature · CPC title

• H03K17/74

  by the use, as active elements, of diodes (by the use of more than one type of semiconductor device H03K17/567; by the use of tunnel diodes H03K17/58; by the use of negative resistance diodes H03K17/70) · CPC title

• H03K5/08 Primary

  by limiting; by thresholding; by slicing, i.e. combined limiting and thresholding (H03K5/07 takes precedence; comparing one pulse with another H03K5/22; providing a determined threshold for switching H03K17/30) · CPC title