Packaging structure and method of packaging tunable laser device, and tunable laser device

US9608402B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9608402-B2
Application numberUS-201615169436-A
CountryUS
Kind codeB2
Filing dateMay 31, 2016
Priority dateAug 28, 2014
Publication dateMar 28, 2017
Grant dateMar 28, 2017

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

The present disclosure provides a packaging structure and a method of packaging an tunable laser device, and an tunable laser device. The packaging structure of the tunable laser device may include a TO tube base and a TO tube cap, wherein a first thermal sink is disposed on the TO tube base, a semiconductor laser chip is disposed on a vertical side of the first thermal sink, an aspheric lens is disposed on the TO tube cap, and the semiconductor laser chip is disposed on a central axis of the aspheric lens; and wherein the vertical side of the first thermal sink is a side of the first thermal sink perpendicular to the TO tube base. The tunable laser device according to the present disclosure may be applicable to communication over an optical fiber.

First claim

Opening claim text (preview).

The invention claimed is: 1. A packaging structure of a tunable laser device, comprising: a TO tube base; a TO tube cap; a thermoelectric cooler disposed on the TO tube base; a first thermal sink disposed on the thermoelectric cooler; a semiconductor laser chip, a backlight monitor and a temperature sensor, disposed on the first thermal sink; an aspheric lens disposed on the TO tube cap; and a Distributed Bragg Reflector disposed in the semiconductor laser chip. 2. The packaging structure according to claim 1 , wherein the first thermal sink comprises a horizontal side and a vertical side, the horizontal side of the first thermal sink is disposed on the thermoelectric cooler, the semiconductor laser chip is disposed on the vertical side of the first thermal sink, and the semiconductor laser chip is disposed on a central axis of the aspheric lens, wherein the vertical side of the first thermal sink is perpendicular to the TO tube base, and the horizontal side of the first thermal sink is parallel to the TO tube base. 3. The packaging structure according to claim 2 , wherein the packaging structure further comprises: a second thermal sink, wherein the semiconductor laser chip is disposed on the second thermal sink, and the second thermal sink is disposed on the vertical side of the first thermal sink. 4. The packaging structure according to claim 2 , wherein the backlight monitor is disposed on the horizontal side of the first thermal sink, and the temperature sensor is disposed on the vertical side of the first thermal sink. 5. The packaging structure according to claim 3 , wherein the temperature sensor is disposed on the second thermal sink. 6. The packaging structure according to claim 1 , wherein the first thermal sink comprises a horizontal side, the horizontal side of the first thermal sink is parallel to the TO tube base, the packaging structure further comprises a reflector with an angle of 45 degrees disposed on the thermoelectric cooler, the semiconductor laser chip is disposed on the horizontal side of the first thermal sink, and the semiconductor laser chip is arranged parallel to the TO tube base, wherein the laser light emitted from the semiconductor laser chip is reflected by the reflector with an angle of 45 degrees to the aspheric lens. 7. The packaging structure according to claim 1 , wherein the first thermal sink is a thermal sink with high thermal conductivity, the backlight monitor is a backlight monitor diode, and the temperature sensor is a thermally sensitive resistor. 8. The packaging structure according to claim 1 , wherein an external diameter of the TO tube base is ranging from 5.6 to 12 millimeters, and the number of pins of the TO tube base is ranging from 6 to 12; the TO tube cap is a flat window tube cap or a non-spherical tube cap. 9. The packaging structure according to claim 1 , a distance between the temperature sensor and the semiconductor laser chip is set between 30 μm and 200 μm. 10. A method of packaging a tunable laser device comprising a semiconductor laser chip, a thermoelectric cooler, a first thermal sink, a backlight monitor, a temperature sensor, an aspheric lens, a TO tube base, and a TO tube cap, and a Distributed Bragg Reflector disposed in the semiconductor laser chip, the method comprising: adhering the thermoelectric cooler on the TO tube base through eutectic soldering or high thermal conductivity glue; adhering the first thermal sink on the thermoelectric cooler through eutectic soldering or high thermal conductivity glue; adhering the semiconductor laser chip, the backlight monitor and the temperature sensor on the first thermal sink through eutectic soldering or high thermal conductivity glue; connecting above components with pins of the TO tube base through gold-wire soldering; soldering the aspheric lens on the TO tube cap; and soldering the TO tube cap soldered with the aspheric lens on the TO tube base through resistance welding. 11. The packaging method according to claim 10 , wherein the first thermal sink comprises a horizontal side and a vertical side, the vertical side of the first thermal sink is perpendicular to the TO tube base, and the horizontal side of the first thermal sink is parallel to the TO tube base, adhering the semiconductor laser chip, the backlight monitor and the temperature sensor on the first thermal sink through eutectic soldering or high thermal conductivity glue comprises: soldering the semiconductor laser chip on the vertical side of the first thermal sink; soldering the temperature sensor on the vertical side of the first thermal sink; adhering the backlight monitor on the horizontal side of the first thermal sink. 12. The packaging method according to claim 11 , wherein the tunable laser device further comprises a second thermal sink; and the soldering the temperature sensor on the vertical side of the first thermal sink comprises: soldering the temperature sensor on the second thermal sink; and soldering the second thermal sink on the vertical side of the first thermal sink. 13. The packaging method according to claim 10 , wherein the first thermal sink comprises a horizontal side, the horizontal side of the first thermal sink is parallel to the TO tube base, adhering the semiconductor laser chip, the backlight monitor and the temperature sensor on the first thermal sink through eutectic soldering or high thermal conductivity glue comprises: adhering the semiconductor laser chip, the backlight monitor and the temperature sensor on the horizontal side of the first thermal sink through eutectic soldering or high thermal conductivity glue; wherein the packaging structure further comprises a reflector with an angle of 45 degrees, and the method further comprises: adhering the reflector with an angle of 45 degrees on the thermoelectric cooler through eutectic soldering or high thermal conductivity glue.

Assignees

Inventors

Classifications

  • by using a thermo-electric cooler [TEC], e.g. Peltier element · CPC title

  • Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis · CPC title

  • Electricity · mapped topic

  • Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping (H01S5/026, H01S5/18388 take precedence) · CPC title

  • Characterized by cooling of elements other than the laser chip, e.g. an optical element being part of an external cavity or a collimating lens · CPC title

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What does patent US9608402B2 cover?
The present disclosure provides a packaging structure and a method of packaging an tunable laser device, and an tunable laser device. The packaging structure of the tunable laser device may include a TO tube base and a TO tube cap, wherein a first thermal sink is disposed on the TO tube base, a semiconductor laser chip is disposed on a vertical side of the first thermal sink, an aspheric lens i…
Who is the assignee on this patent?
Hisense Broadband Multimedia Technology Co Ltd, Hisense Usa Corp, Hisense Int Co Ltd
What technology area does this patent fall under?
Primary CPC classification H01S5/02212. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Mar 28 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).