Thin film encapsulation structure and organic light emitting device having the same

Patent metadata

Field	Value
Publication number	US-9608235-B2
Application number	US-201615062573-A
Country	US
Kind code	B2
Filing date	Mar 7, 2016
Priority date	Mar 16, 2015
Publication date	Mar 28, 2017
Grant date	Mar 28, 2017

Abstract

The present disclosure provides a thin film encapsulation structure for encapsulating a functional device on a substrate, including: a mixing layer thin film covering the functional device, and an inorganic layer thin film located above the mixing layer thin film, wherein the mixing layer thin film is mainly composed of amorphous aluminum oxide and a crystalline oxide. The present disclosure also provides an organic light emitting device, including a substrate, an OLED device located on the substrate, and the thin film encapsulation structure as mentioned above.

First claim

What is claimed is:

1. A thin film encapsulation structure for encapsulating a functional device on a substrate, comprising: a mixing layer thin film covering the functional device, and an inorganic layer thin film located above the mixing layer thin film, wherein the mixing layer thin film is mainly composed of amorphous aluminum oxide and a crystalline oxide.

2. The thin film encapsulation structure according to claim 1 , wherein, the crystalline oxide is selected from one or more of crystalline zirconium dioxide, crystalline zinc oxide and crystalline magnesium oxide.

3. The thin film encapsulation structure according to claim 1 , wherein, a mass ratio between the amorphous aluminum oxide and the crystalline oxide is 3˜7.

4. The thin film encapsulation structure according to claim 1 , wherein, the inorganic layer thin film is a SiN X thin film.

5. The thin film encapsulation structure according to claim 4 , wherein, the SiN X thin film is a SiN thin film or a Si 3 N 4 thin film.

6. The thin film encapsulation structure according to claim 2 , wherein, the inorganic layer thin film is a SiN X thin film.

7. The thin film encapsulation structure according to claim 6 , wherein, the SiN X thin film is a SiN thin film or a Si 3 N 4 thin film.

8. The thin film encapsulation structure according to claim 3 , wherein, the inorganic layer thin film is a SiN X thin film.

9. The thin film encapsulation structure according to claim 8 , wherein, the SiN X thin film is a SiN thin film or a Si 3 N 4 thin film.

10. The thin film encapsulation structure according to claim 1 , wherein, a thickness of the mixing layer thin film is 50˜1000 nm, and a thickness of the inorganic layer thin film is 10˜1000 nm.

11. A preparation method of a thin film encapsulation structure, the thin film encapsulation structure being used for encapsulating a functional device on a substrate, and comprising: a mixing layer thin film covering the functional device, and an inorganic layer thin film located above the mixing layer thin film, wherein the mixing layer thin film is mainly composed of amorphous aluminum oxide and a crystalline oxide,
wherein the preparation method comprises:
preparing the mixing layer thin film by using a facing target sputtering method; and
preparing the inorganic layer thin film by using a magnetron sputtering method.

12. The preparation method of the thin film encapsulation structure according to claim 11 , wherein, a technological condition of the facing target sputtering method is: a sputtering power of 300˜800 W, an argon flow of 30˜80 sccm, a pressure range of 0.5˜8 mTorr, an oxygen flow of 0.1˜10 sccm, and a deposition time of 10 min˜5 h.

13. The preparation method of the thin film encapsulation structure according to claim 11 , wherein, a technological condition of the magnetron sputtering method is: a sputtering power of 300˜800 W, an argon flow of 30˜80 sccm, a pressure range of 0.5˜2 mTorr, and a deposition time of 10 min˜5 h.

14. An organic light emitting device, comprising a substrate, an OLED device located on the substrate, and a thin film encapsulation structure,
wherein the thin film encapsulation structure is used for encapsulating the OLED device, and comprises: a mixing layer thin film covering the OLED device, and an inorganic layer thin film located above the mixing layer thin film, wherein the mixing layer thin film is mainly composed of amorphous aluminum oxide and a crystalline oxide.

Assignees

• Everdisplay Optronics (Shanghai) Ltd

Inventors

• Xiao Ling
• Li Guifang
• Hu Niu

Classifications

• H10P14/69391

  the material containing aluminium, e.g. Al2O3 · CPC title

• H10P14/6329

  using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition · CPC title

• H10P14/662

  Laminate layers, e.g. stacks of alternating high-k metal oxides (adhesion layers or buffer layers H10P14/6508, H10P14/6548) · CPC title

• H10K50/846

  comprising getter material or desiccants · CPC title

• C23C14/3464 Primary

  using more than one target (C23C14/56 takes precedence) · CPC title