Magnetic tunnel junction device

Patent metadata

Field	Value
Publication number	US-9608195-B2
Application number	US-201514820820-A
Country	US
Kind code	B2
Filing date	Aug 7, 2015
Priority date	Aug 29, 2013
Publication date	Mar 28, 2017
Grant date	Mar 28, 2017

Abstract

A device includes creating an opening in a dielectric layer that is disposed over a bottom electrode layer. A top electrode layer is disposed over the dielectric layer. A magnetic tunnel junction (MTJ) layer is formed in the opening over the bottom electrode layer.

First claim

What is claimed is:

1. A magnetic tunnel junction (MTJ) device comprising:
a substrate;
a bottom electrode disposed over the substrate;
a MTJ stack disposed over the bottom electrode;
a top electrode disposed over the MTJ stack, wherein the top electrode has a T-shape, the T-shape comprising a pillar and a cross member, a portion of the pillar most proximate to the MTJ stack having a greater width than a portion of the pillar most distal from the MTJ stack; and
a material similar to material included in the MTJ stack disposed at corners of the top electrode, the corners being located at junctions of the pillar and the cross member of the top electrode.

2. The MTJ device of claim 1 , wherein the pillar has a sidewall angle ranging from 80 degrees to 87 degrees.

3. The MTJ device of claim 1 , further comprising a dielectric layer over the bottom electrode, the dielectric layer having a void, wherein the MTJ stack is within the void.

4. The MTJ device of claim 3 , wherein the top electrode extends over the void in the dielectric layer.

5. The MTJ device of claim 3 , wherein the void in the dielectric layer exposes the bottom electrode.

6. The MTJ device of claim 3 , wherein the pillar extends downward into the void.

7. The MTJ device of claim 1 , wherein the MTJ stack has a circular, elliptical, or oval shape in a top view.

8. The MTJ device of claim 1 , wherein sidewalls of the pillar are inwardly concave.

9. A magnetic tunnel junction (MTJ) device comprising:
a substrate;
a bottom electrode over the substrate;
a dielectric layer on the bottom electrode, the dielectric layer having a void, the void having a first opening along a surface of the bottom electrode;
a MTJ stack on the bottom electrode in the first opening of the dielectric layer, the MTJ stack being spaced apart from sidewalls of the void; and
a top electrode disposed over the dielectric layer, the top electrode comprising a pillar extending from a cross member, the pillar extending through a second opening of the void in the dielectric layer, the pillar extending to the MTJ stack.

10. The MTJ device of claim 9 , wherein the pillar has tapered sidewalls.

11. The MTJ device of claim 9 , wherein a width of the pillar adjacent the cross member is less than a width of the pillar adjacent the MTJ stack.

12. The MTJ device of claim 9 , further comprising a MTJ deposition at an intersection of the pillar and the cross member.

13. The MTJ device of claim 9 , wherein the void extends around sidewalls of the MTJ stack.

14. The MTJ device of claim 9 , wherein a width of the void along the bottom electrode is less than a width of the void along the tope electrode.

15. A magnetic tunnel junction (MTJ) device comprising:
a substrate;
a bottom electrode over the substrate;
a dielectric layer over the bottom electrode;
a top electrode over the dielectric layer, the dielectric layer having an opening extending between the bottom electrode and the top electrode, the top electrode extending over the opening, the top electrode comprising a pillar and a cross member, the pillar extending into the opening; and
a MTJ stack on the bottom electrode within the opening, sidewalls of the MTJ stack being spaced apart from sidewalls of the opening, wherein the pillar of the top electrode is electrically coupled to the MTJ stack.

16. The MTJ device of claim 15 , further comprising a MTJ deposition at an intersection of the pillar and the cross member of the top electrode.

17. The MTJ device of claim 16 , wherein the opening along the bottom electrode is between 2 and 3 times a sum of a width of the pillar at the intersection of the pillar and the cross member and a width of the MTJ deposition.

18. The MTJ device of claim 15 , wherein a sidewall of the MTJ stack has a sidewall angle between 80 degrees and 87 degrees.

19. The MTJ device of claim 15 , wherein a sidewall of the pillar has a sidewall angle between 80 degrees and 90 degrees.

20. The MTJ device of claim 15 , wherein the dielectric layer has a thickness of between 300 Å and 400 Å.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Huang Wei-Hang
• Hsu Chern-Yow
• Liu Shih-Chang
• Tsai Chia-Shiung

Classifications

• H01L43/12

  Electricity · mapped topic

• H01L43/08

  Electricity · mapped topic

• H01L43/02 Primary

  Electricity · mapped topic

• H01L43/10

  Electricity · mapped topic

• H10N50/85

  Materials of the active region · CPC title