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Ohmic contacts for semiconductor structures
US9608185B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9608185-B2 |
| Application number | US-201414261901-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 25, 2014 |
| Priority date | May 25, 2010 |
| Publication date | Mar 28, 2017 |
| Grant date | Mar 28, 2017 |
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- Title
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Abstract
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A composition and method for formation of ohmic contacts on a semiconductor structure are provided. The composition includes a TiAl x N y material at least partially contiguous with the semiconductor structure. The TiAl x N y material can be TiAl 3 . The composition can include an aluminum material, the aluminum material being contiguous to at least part of the TiAl x N y material, such that the TiAl x N y material is between the aluminum material and the semiconductor structure. The method includes annealing the composition to form an ohmic contact on the semiconductor structure.
First claim
Opening claim text (preview).
What is claimed is: 1. A method for formation of an ohmic contact, the method comprising: obtaining or providing a semiconductor structure comprising an n-doped GaN; depositing TiAl 3 about 50 angstroms to about 200 angstroms thick contiguous to at least part of the n-doped GaN, wherein the depositing of the TiAl 3 is without annealing, and the depositing comprises at least one of atomic layer deposition, physical vapor deposition, and chemical vapor deposition; depositing aluminum about 5 angstroms to about 4000 angstroms thick contiguous to at least part of the TiAl 3 , such that the TiAl 3 is between the aluminum and the n-doped GaN; and annealing the semiconductor structure and the TiAl 3 and the aluminum at or less than about 660° C. for a duration of about 30 to about 60 seconds to form an ohmic contact. 2. The method of claim 1 , further comprising manufacturing a light emitting diode (LED) semiconductor device from the semiconductor structure. 3. The method of claim 1 , wherein the TiAl 3 is approximately 200 angstroms thick. 4. The method of claim 1 , wherein the aluminum is deposited using at least one of atomic layer deposition, physical vapor deposition (PVD), and chemical vapor deposition (CVD).
Assignees
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Classifications
Electricity · mapped topic
Electricity · mapped topic
- H01L33/62Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9608185B2 cover?
- A composition and method for formation of ohmic contacts on a semiconductor structure are provided. The composition includes a TiAl x N y material at least partially contiguous with the semiconductor structure. The TiAl x N y material can be TiAl 3 . The composition can include an aluminum material, the aluminum material being contiguous to at least part of the TiAl x N y material, such that…
- Who is the assignee on this patent?
- Micron Technology Inc, Micron Tech
- What technology area does this patent fall under?
- Primary CPC classification H01L33/62. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 28 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).