Method for fabrication of copper-indium gallium oxide and chalcogenide thin films

Patent metadata

Field	Value
Publication number	US-9608146-B2
Application number	US-201514682574-A
Country	US
Kind code	B2
Filing date	Apr 9, 2015
Priority date	Apr 9, 2014
Publication date	Mar 28, 2017
Grant date	Mar 28, 2017

Abstract

A composition of matter and method of forming copper indium gallium sulfide (CIGS), copper indium gallium selenide (CIGSe), or copper indium gallium telluride thin film via conversion of layer-by-layer (LbL) assembled Cu—In—Ga oxide (CIGO) nanoparticles and polyelectrolytes. CIGO nanoparticles are created via a flame-spray pyrolysis method using metal nitrate precursors, subsequently coated with polyallylamine (PAH), and dispersed in aqueous solution. Multilayer films are assembled by alternately dipping a substrate into a solution of either polydopamine (PDA) or polystyrenesulfonate (PSS) and then in the CIGO-PAH dispersion to fabricate films as thick as 1-2 microns. After LbL deposition, films are oxidized to remove polymer and sulfurized, selenized, or tellurinized to convert CIGO to CIGS, CIGSe, or copper indium gallium telluride.

First claim

What is claimed as new and desired to be protected by Letters Patent of the United States is:

1. A method of making copper indium gallium chalcogenide thin films, comprising:
producing copper-indium-gallium oxide (CIGO) nanoparticles via flame spray pyrolysis;
binding the CIGO nanoparticles to a polyamine and dispersing the polyamine-CIGO nanoparticles in an aqueous solution to form a polyamine-CIGO dispersion;
making a polyanion solution; and
dipping a substrate into the polyanion solution and then the polyamine-CIGO dispersion, wherein alternate dipping between the polyanion solution and the coated CIGO dispersion may be repeated multiple times to form a CIGO film.

2. The method of claim 1 , additionally comprising oxidizing the polyamine-CIGO/polyanion film.

3. The method of claim 1 , additionally comprising sulfurizing the polyamine-CIGO/polyanion film to convert said film to a copper indium gallium sulfide film.

4. The method of claim 1 , additionally comprising selenizing the polyamine-CIGO/polyanion film to convert said film to a copper indium gallium selenide film.

5. The method of claim 1 , additionally comprising tellurizing the polyamine-CIGO/polyanion film to convert said film to a copper indium gallium telluride film.

6. The method of claim 1 , wherein the polyamine comprises polyallylamine (PAH).

7. The method of claim 1 , wherein the polyanion comprises polystyrenesulfonate (PSS) or polydopamine (PDA).

8. The method of claim 1 , wherein the substrate comprises silicon, quartz, or molybdenum.

9. The method of claim 8 , wherein the silicon or quartz substrate has a coating comprising N-(2-aminoethyl)-3-aminopropyltrimethoxysilane (EDA) and the molybdenum substrate remains uncoated or has a coating of polydopamine (PDA).

Assignees

• Dressick Walter J
• Sanghera Jasbinder S
• Kim Woohong
• Baker Colin C
• Myers Jason D
• Frantz Jesse A
• Us Navy

Inventors

• Dressick Walter J
• Sanghera Jasbinder S
• Kim Woohong
• Baker Colin C
• Myers Jason D
• Frantz Jesse A

Classifications

• H10P14/3461

  Nanoparticles · CPC title

• H10P14/3436

  being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds · CPC title

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/265

  using solutions · CPC title

• H10P14/203

  using transformation of metal, e.g. oxidation or nitridation · CPC title