Semiconductor device and heat-dissipating mechanism

US9607922B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9607922-B2
Application numberUS-201414778684-A
CountryUS
Kind codeB2
Filing dateMar 3, 2014
Priority dateMar 26, 2013
Publication dateMar 28, 2017
Grant dateMar 28, 2017

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A semiconductor device includes a semiconductor chip which can be a heat-generating semiconductor chip or a semiconductor relay substrate in which an integrated circuit or wiring is built in. A sintered-silver-coated film is adhered on a surface layer part of the semiconductor substrate, interposed by a silicon oxide film. A heat-dissipating fin (heat sink), which may be copper or aluminum, is bonded on the sintered-silver-coated film, interposed by an adhesive layer.

First claim

Opening claim text (preview).

The invention claimed is: 1. A semiconductor device comprising: a heat-generating semiconductor package made of ceramic material or resin housing a heat-generating semiconductor substrate incorporated with an integrated circuit or wirings; a silver thin film manufactured from nano-silver particles and formed by a coating method in a closely adhering manner on one surface of the semiconductor package; and a silicon oxidation film having a film thickness of 1 nm or more formed at an adhesion interface between the semiconductor package and the silver thin film. 2. The semiconductor device of claim 1 , comprising a heat sink thermally coupled to the silver thin film. 3. The semiconductor device of claim 1 , wherein the silicon oxidation film has a film thickness of 1 to 200 nm. 4. The semiconductor device of claim 1 , wherein the nano-silver particles have an average particle diameter of 10 to 200 nm and a particle diameter of 5 nm or more at 20% in cumulative distribution from the smallest particle diameter in particle size distribution.

Assignees

Inventors

Classifications

  • Interconnections or connectors in packages · CPC title

  • Metallic materials (H10W40/254, H10W40/257, H10W40/255, H10W40/251, H10W40/253 take precedence) · CPC title

  • characterised by their materials · CPC title

  • H10W40/10Primary

    Arrangements for heating · CPC title

  • Arrangements for thermal protection or thermal control (integrated devices comprising arrangements for thermal protection H10D89/60) · CPC title

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What does patent US9607922B2 cover?
A semiconductor device includes a semiconductor chip which can be a heat-generating semiconductor chip or a semiconductor relay substrate in which an integrated circuit or wiring is built in. A sintered-silver-coated film is adhered on a surface layer part of the semiconductor substrate, interposed by a silicon oxide film. A heat-dissipating fin (heat sink), which may be copper or aluminum, is …
Who is the assignee on this patent?
Tanaka Precious Metal Ind
What technology area does this patent fall under?
Primary CPC classification H10W40/10. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Mar 28 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).