Self-limiting chemical vapor deposition and atomic layer deposition methods

Patent metadata

Field	Value
Publication number	US-9607920-B2
Application number	US-201615060795-A
Country	US
Kind code	B2
Filing date	Mar 4, 2016
Priority date	Dec 6, 2013
Publication date	Mar 28, 2017
Grant date	Mar 28, 2017

Abstract

Methods for depositing silicon on a semiconductor or metallic surface include cycling dosing of silane and chlorosilane precursors at a temperature between 50° C. and 300° C., and continuing cycling between three and twenty three cycles until the deposition self-limits via termination of surface sites with Si—H groups. Methods of layer formation include depositing a chlorosilane onto a substrate to form a first layer, wherein the substrate is selected from the group consisting of In x Ga 1-x As, In x Ga 1-x Sb, In x Ga 1-x N, SiGe, and Ge, wherein X is between 0.1 and 0.99. The methods may include pulsing a silane to form a silicon monolayer and cycling dosing of the chlorosilane and the silane. Layered compositions include a first layer selected from the group consisting of In x Ga 1-x As, In x Ga 1-x Sb, In x Ga 1-x N, SiGe, and Ge, wherein X is between 0.1 and 0.99, and a second layer, wherein the second layer comprises Si—H and Si—OH.

First claim

We claim:

1. A method for depositing silicon on a semiconductor or metallic surface, the method comprising:
cycling dosing of silane and chlorosilane precursors at a temperature between 50° C. and 300° C.; and
continuing cycling between three and twenty three cycles or until the deposition self-limits via termination of surface sites with Si—H groups.

2. The method of claim 1 , wherein the low temperature is at or below 250° C. and the surface is the surface of a substrate of one of In x Ga 1-x As, In x Ga 1-x Sb, In x Ga 1-x N, SiGe, Ge and a metallic substrate.

3. The method of claim 1 , wherein the low temperature is at or below 150° C. and the surface is the surface of a substrate that recombinatively desorbs H 2 at or below 150° C.

4. The method of claim 1 , wherein the silane precursor is one of SiH 4 , Si 2 H 6 , Si 3 H 8 , Si 4 H 10 , and Si 5 H 12 .

5. The method of claim 1 , wherein the chlorosilane precursor is one of SiCl 4 , Si 2 Cl 6 , and Si 3 Cl 8 .

6. A method of layer formation comprising:
depositing a chlorosilane onto a substrate to form a first layer, wherein the substrate is selected from the group consisting of In x Ga 1-x As, In x Ga 1-x Sb, In x Ga 1-x N, SiGe, and Ge, wherein X is between 0.1 and 0.99;
pulsing a silane to form a silicon monolayer on the first layer;
cycling dosing of the chlorosilane and the silane; and
after self-termination, raising the temperature and depositing additional silicon.

7. The method of claim 6 , further comprising functionalizing the silicon monolayer with an oxidant.

8. The method of claim 6 , wherein the cycling dosing of the chlorosilane and the silane is performed within a range of 50° C. to 300° C.

9. The method of claim 6 , wherein the layer has a surface that recombinatively desorbs H 2 at or below 150° C.

10. The method of claim 6 , wherein the silane precursor is SiH 4 , Si 2 H 6 , Si 3 H 8 , Si 4 H 10 , or Si 5 H 12 .

11. The method of claim 6 , wherein the chlorosilane precursor is SiCl 4 , Si 2 Cl 6 , or Si 3 Cl 8 .

12. A layered composition comprising:
a first layer selected from the group consisting of In x Ga 1-x As, In x Ga 1-x Sb, In x Ga 1-x N, SiGe, and Ge, wherein X is between 0.1 and 0.99; and
a second layer, wherein the second layer comprises Si—H and Si—OH.

13. A method for depositing silicon on a semiconductor or metallic surface, the method comprising:
cycling dosing of silane and chlorosilane precursors at a temperature between 50° C. and 300° C.; and
continuing cycling until the deposition self-limits via termination of surface sites with Si—H groups.

14. The method of claim 13 , wherein the low temperature is at or below 250° C. and the surface is the surface of a substrate of one of In x Ga 1-x As, In x Ga 1-x Sb, In x Ga 1-x N, SiGe, Ge and a metallic substrate.

15. The method of claim 13 , wherein the low temperature is at or below 150° C. and the surface is the surface of a substrate that recombinatively desorbs H 2 at or below 150° C.

16. The method of claim 13 , wherein the silane precursor is one of SiH 4 , Si 2 H 6 , Si 3 H 8 , Si 4 H 10 , and Si 5 H 12 .

17. The method of claim 13 , wherein the chlorosilane precursor is one of SiCl 4 , Si 2 Cl 6 , and Si 3 Cl 8 .

18. The method of claim 13 , further comprising, after self-termination, raising the temperature and depositing additional silicon.

Assignees

• Applied Materials Inc
• Univ California

Inventors

• Edmonds Mary
• Kummel Andrew C
• Noori Atif M

Classifications

• H10P14/6903

  containing silicon · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• H10P14/2907

  being Group IIIA-VA materials · CPC title

• H10P14/2905 Primary

  Silicon, silicon germanium or germanium · CPC title