Manufacturing method for semiconductor structure
US-12165910-B2 · Dec 10, 2024 · US
Substrate structure, semiconductor device, and method for manufacturing the same
US9607877B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9607877-B2 |
| Application number | US-201113376731-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 4, 2011 |
| Priority date | Oct 21, 2010 |
| Publication date | Mar 28, 2017 |
| Grant date | Mar 28, 2017 |
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Abstract
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The present invention provides a substrate structure, a semiconductor device, and a manufacturing method thereof. The substrate structure comprises: a semiconductor substrate; and a first isolation region, wherein the first isolation region comprises: a first trench extending through the semiconductor substrate; and a first dielectric layer filling the first trench. Due to the isolation region extending through the substrate, it is possible to make device structures on both surfaces of the substrate, so as to increase the utilization of the substrate and the integration degree of the devices.
First claim
Opening claim text (preview).
What is claimed is: 1. A substrate structure, comprising: a semiconductor substrate comprising a first side and a second side opposing the first side, wherein at least one of the first side and the second side is configured as a device forming side; a first isolation region, wherein the first isolation region includes a first trench extending through the semiconductor substrate from the first side to the second side, and wherein the first trench is filled with only a first die…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9607877B2 cover?
- The present invention provides a substrate structure, a semiconductor device, and a manufacturing method thereof. The substrate structure comprises: a semiconductor substrate; and a first isolation region, wherein the first isolation region comprises: a first trench extending through the semiconductor substrate; and a first dielectric layer filling the first trench. Due to the isolation region …
- Who is the assignee on this patent?
- Zhong Huicai, Liang Qingqing, Inst Of Microelectronics Cas
- What technology area does this patent fall under?
- Primary CPC classification H10W10/014. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 28 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).