Apparatus and operation method thereof

Patent metadata

Field	Value
Publication number	US-9607873-B2
Application number	US-201414175693-A
Country	US
Kind code	B2
Filing date	Feb 7, 2014
Priority date	Feb 7, 2014
Publication date	Mar 28, 2017
Grant date	Mar 28, 2017

Abstract

An apparatus includes a body and a surface for receiving a semiconductor wafer carrier is provided. A nozzle and a venting hole are provided on the surface. The semiconductor wafer carrier has at least one selectively closable capped opening at a bottom, top and/or side surface thereof. The capped opening is configured to couple to, and be accessible by, the nozzle and receive gas output from the nozzle so as to create a substantially oxygen free environment within the semiconductor wafer carrier. The vent hole is configured to allow gas to flow out of the semiconductor wafer carrier. In addition, the apparatus includes a sensor and a controller. The sensor is configured to monitor an ambient condition in the semiconductor wafer carrier, and the controller is configured to adjust a control valve based on the ambient condition so as to control the gas flow or output from the nozzle.

First claim

What is claimed is:

1. An apparatus, comprising:
a body including a surface, wherein the surface is configured to receive a semiconductor wafer carrier;
a nozzle on the surface, wherein the nozzle is connected to a gas source through a gas line, and the nozzle is configured to provide a gas output from the gas source to the semiconductor wafer carrier, wherein the semiconductor wafer carrier includes a capped opening at a surface thereof, configured to couple with the nozzle to provide the gas output to the semiconductor wafer carrier so as to generate a substantially oxygen free environment within the semiconductor wafer carrier;
a venting hole on the surface, wherein the venting hole is configured to allow gas flow from the semiconductor wafer carrier;
a sensor within the body, wherein the sensor is configured to monitor an ambient condition in the semiconductor wafer carrier; and
a controller within the body, wherein the controller is connected to the sensor and a control valve, wherein the controller is configured to receive the ambient condition detected by the sensor and adjust the control valve based on the ambient condition so as to control the gas output from the nozzle.

2. The apparatus according to claim 1 , wherein the gas output is an inert gas.

3. The apparatus according to claim 1 , further comprising:
a diffuser at the nozzle, wherein the diffuser is configured to adjust flow direction, speed or rate of the gas output.

4. The apparatus according to claim 1 , further comprising a filter in the nozzle.

5. The apparatus according to claim 1 , further comprising:
a suction unit at the venting hole, wherein the suction unit is configured to vacuum the semiconductor wafer carrier.

6. The apparatus according to claim 1 , wherein the sensor is a flow meter proximal to the nozzle, wherein the flow meter is configured to monitor at least a flow rate of the gas output.

7. The apparatus according to claim 1 , wherein the sensor is a humidity sensor proximal to the venting hole, wherein the humidity sensor is configured to monitor a humidity level in the semiconductor wafer carrier.

8. The apparatus according to claim 1 , wherein the sensor is an oxygen sensor proximal to the venting hole, wherein the oxygen sensor is configured to monitor an oxygen concentration in the semiconductor wafer carrier.

9. The apparatus according to claim 1 , wherein the sensor is a pressure sensor configured to monitor a pressure level in the semiconductor wafer carrier.

10. A semiconductor wafer process system, comprising:
a load port has a body including a surface, wherein the surface is configured to receive a semiconductor wafer carrier, the load port comprising:
a nozzle on the surface, wherein the nozzle is connected to a gas source through a gas line, and the nozzle is configured to provide a gas output from the gas source to the semiconductor wafer carrier, wherein the semiconductor wafer carrier includes a capped opening at a surface thereof, configured to couple with the nozzle to provide the gas output to the semiconductor wafer carrier so as to generate a substantially oxygen free environment within the semiconductor wafer carrier;
a venting hole on the surface, wherein the venting hole is configured to allow gas flow from the semiconductor wafer carrier;
a sensor within the body, wherein the sensor is configured to monitor an ambient condition in the semiconductor wafer carrier; and
a controller within the body, wherein the controller is connected to the sensor and a control valve, wherein the controller is configured to receive the ambient condition detected by the sensor and adjust the control valve based on the ambient condition so as to control the gas output from the nozzle; and

an interface apparatus between the load port and a semiconductor manufacturing equipment, wherein the load port and the semiconductor manufacturing equipment are connected at different side walls of the interface apparatus, wherein the interface apparatus is configured to transmit a semiconductor wafer between the semiconductor wafer carrier and the semiconductor manufacturing equipment by a robot,
wherein the load port is configured to purge the semiconductor wafer carrier with nitrogen through the nozzle when the semiconductor wafer carrier is engaged with the load port so as to generate the substantially oxygen free environment within the semiconductor wafer carrier,
wherein the nozzle is connected to the gas source in the interface apparatus.

11. The semiconductor wafer process system according to claim 10 , wherein the interface apparatus comprises a door opener proximal to the load port, and the door opener is configured to open a door at a sidewall of the semiconductor wafer carrier,
wherein the load port is configured to purge nitrogen into the semiconductor wafer carrier when the door opener is not at an opened position.

12. The semiconductor wafer process system according to claim 10 , wherein the load port comprises the body below an upper surface of the load port,
wherein the body is configured to receive purged nitrogen from the semiconductor wafer carrier through the venting hole of the load port.

13. The semiconductor wafer process system according to claim 10 , wherein:
the gas line is configured to connect the nozzle and the gas source;
the control valve is between the nozzle and the gas source; and
the controller is connected to the control valve and the sensor, wherein the sensor is disposed at the load port and configured to monitor the ambient condition in the semiconductor wafer carrier,
wherein the controller is configured to receive the ambient condition detected by the sensor and adjust the control valve based on the ambient condition so as to control the nitrogen from the nozzle.

14. The semiconductor wafer process system according to claim 13 , wherein the sensor is an oxygen sensor, and the oxygen sensor is configured to monitor an oxygen concentration in the semiconductor wafer carrier.

15. The semiconductor wafer process system according to claim 13 , wherein the sensor is a humidity sensor, and the humidity sensor is configured to monitor a humidity level in the semiconductor wafer carrier.

16. An apparatus, comprising:
a load port having a surface and configured to receive a semiconductor wafer carrier including a first capped opening and a second capped opening, the load port comprising:
a nozzle on the surface, configured to provide a gas to the semiconductor wafer carrier by coupling with the first capped opening so as to generate a substantially oxygen free environment within the semiconductor wafer carrier;
a venting hole on the surface, configured to allow gas flow from the semiconductor wafer carrier by coupling with the second capped opening; and
a controller within the load port, configured to adjust a control valve based on an ambient condition in the semiconductor wafer carrier so as to control the gas output from the nozzle.

17. The apparatus according to claim 16 , wherein the gas output is an inert gas.

18. The apparatus according to claim 16 , further comprising:
a diffuser at the nozzle, wherein the diffuser is configured to adjust flow direction, speed or rate of the gas output.

19. The apparatus according to claim 16 , further comprising a filter in the nozzle.

20. The apparatus according to claim 16 , further comprising:
a suction unit at the venting hole, wherein the suction unit is configured to vacuum the semiconductor wafer carrier.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Liao Si-Wen
• Xu jia-wei
• Lin mao-cheng
• Wu Chien-Cheng
• Wang Lan-Hai
• Liu Ding-I
• Lo Fu-Shun

Classifications

• H10P72/1924

  characterised by atmosphere control · CPC title

• H10P72/3408 Primary

  Docking arrangements · CPC title

• H01L21/67389

  Electricity · mapped topic

• H01L21/67775 Primary

  Electricity · mapped topic