Epitaxial wafer manufacturing device and manufacturing method

Patent metadata

Field	Value
Publication number	US-9607832-B2
Application number	US-201214236951-A
Country	US
Kind code	B2
Filing date	Aug 2, 2012
Priority date	Aug 5, 2011
Publication date	Mar 28, 2017
Grant date	Mar 28, 2017

Abstract

Provided is an epitaxial wafer manufacturing device ( 1 ) that deposits and grows epitaxial layers on the surfaces of wafers W while supplying a raw material gas to a chamber, wherein a shield ( 12 ), arranged in close proximity to the lower surface of a top plate ( 3 ) so as to prevent deposits from being deposited on the lower surface of the top plate ( 3 ), is removably attached inside the chamber, has an opening ( 13 ) in the central portion thereof that forces a gas inlet ( 9 ) to face the inside of a reaction space K, and has a structure in which it is concentrically divided into a plurality of ring plates ( 16 ), ( 17 ) and ( 18 ) around the opening ( 13 ).

First claim

The invention claimed is:

1. An epitaxial wafer manufacturing device that deposits and grows epitaxial layers on the surfaces of heated wafers while supplying a raw material gas to a chamber, provided with:
a susceptor having a plurality of mounting portions on which the wafers are mounted, wherein the plurality of mounting portions are arranged in a row in the circumferential direction;
a top plate arranged in opposition to the upper surface of the susceptor so as to form a reaction space between the top plate and the susceptor;
a heating means arranged on the lower surface side of the susceptor and/or upper surface side of the top plate for heating the wafers mounted on the mounting portions;
a gas supply means having a gas inlet for introducing the raw material gas from a central portion of the upper surface of the top plate to the reaction space, that supplies raw material gas released from the gas inlet from the inside to the outside of the reaction space; and,
a shield arranged in close proximity to the lower surface of the top plate so as to prevent deposits from being deposited on the lower surface of the top plate; wherein,
in addition to being removably attached inside the chamber, the shield has an opening in the central portion thereof that forces the gas inlet to face the inside of the reaction space, and has a structure in which it is divided into a plurality of distinct ring plates that are concentric around the opening and removably attached to one another.

2. The epitaxial wafer manufacturing device according to claim 1 , provided with a sidewall located outside the susceptor and the top plate and arranged so as to surround the periphery of the reaction space, wherein
a support portion for supporting the shield is provided on the inner peripheral surface of the sidewall.

3. The epitaxial wafer manufacturing device according to claim 2 , wherein the support portion is a step portion provided over the entire circumference on the inner peripheral surface of the sidewall, and supports the shield in a state in which the outer peripheral portion of the shield is mounted on this step portion.

4. The epitaxial wafer manufacturing device according to claim 1 , wherein, among adjacent ring plates on both sides of each dividing line of the plurality of concentrically divided ring plates, an inner step portion provided on the outer peripheral portion on the lower surface side of the ring plate located to the inside of the dividing line, and an outer step portion provided on the inner peripheral portion on the upper surface side of the ring plate located to the outside of the dividing line, are engaged in a state in which their mutual step surfaces are in contact, and a gap is provided between the lateral surface of the inner step portion and the lateral surface of the outer step portion.

5. The epitaxial wafer manufacturing device according to claim 1 , wherein at least the lower surfaces of the plurality of concentrically divided ring plates are on the same plane.

6. The epitaxial wafer manufacturing device according to claim 1 , wherein the shield has a structure in which it is divided into an inner peripheral ring plate, a central ring plate and an outer peripheral ring plate moving from the inside to the outside, and
a dividing line between the inner peripheral ring plate and the central ring plate is located farther to the inside than the region where the plurality of mounting portions are arranged in a row in the circumferential direction, and a dividing line between the central ring plate and the outer peripheral ring plate is located farther to the outside than the region where the plurality of mounting portions are arranged in a row in the circumferential direction.

7. The epitaxial wafer manufacturing device according to claim 1 , wherein the shield has a structure in which it is divided into an inner peripheral ring plate and an outer peripheral ring plate moving from the inside to the outside, and
a dividing line between the inner peripheral ring plate and the outer peripheral ring plate is located farther to the inside or outside than the region where the plurality of mounting portions are arranged in a row in the circumferential direction.

8. The epitaxial wafer manufacturing device according to claim 6 , wherein the wafer is an SiC single crystal substrate and the epitaxial layer is an SiC single crystal thin film, and
in an SiC deposit deposited on the lower surface of the shield, has a region where the ratio of Si is greater to the inside of a region where the ratios of Si and C contained in the SiC deposit are equal, and a dividing line between the inner peripheral ring plate and the central or outer peripheral ring plate is located so that the inner peripheral ring plate is arranged in this region where the ratio of Si is greater.

9. The epitaxial wafer manufacturing device according to claim 1 , wherein any of the ring plates among the plurality of concentrically divided ring plates is divided into a plurality of ring pieces along dividing lines extending in the radial direction centering around the opening.

10. The epitaxial wafer manufacturing device according to claim 1 , wherein the wafer is an SiC single crystal substrate and the epitaxial layer is an SiC single crystal thin film, and
a graphite substrate coated with an SiC film on the surface thereof or an SiC substrate is at least used for the ring plate arranged at a location opposing the region where the plurality of mounting portions are arranged in a row in the circumferential direction.

11. The epitaxial wafer manufacturing device according to claim 1 , having a structure wherein the susceptor is driven to rotate about the central axis thereof and the plurality of mounting portions are driven to rotate about their respective central axes.

Assignees

• KAGESHIMA Yoshiaki
• Noguchi Tomoyuki
• Muto Daisuke
• Momose Kenji
• Showa Denko Kk

Inventors

• KAGESHIMA Yoshiaki
• Noguchi Tomoyuki
• Muto Daisuke
• Momose Kenji

Classifications

• H10P14/3408

  Silicon carbide · CPC title

• H10P14/2904

  Silicon carbide · CPC title

• H10P14/20 Primary

  of semiconductor materials · CPC title

• C30B25/08

  Reaction chambers; Selection of materials therefor · CPC title

• C30B29/36 Primary

  Carbides · CPC title