Anisotropic conductive film and manufacturing method therefor
US-2016155717-A1 · Jun 2, 2016 · US
US9607727B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9607727-B2 |
| Application number | US-201514733281-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 8, 2015 |
| Priority date | Oct 20, 2014 |
| Publication date | Mar 28, 2017 |
| Grant date | Mar 28, 2017 |
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An anisotropic electroconductive particle including a first insulating layer, a first conductive layer disposed on the first insulating layer, and a second insulating layer disposed on the first conductive layer.
Opening claim text (preview).
What is claimed is: 1. An anisotropic electroconductive material comprising: an insulating adhesive; and a plurality of anisotropic electroconductive particles dispersed in the insulating adhesive, wherein each of the anisotropic electroconductive particles comprises: a first insulating layer; a first conductive layer disposed on the first insulating layer; and a second insulating layer disposed on the first conductive layer. 2. The anisotropic electroconductive material of claim 1 , wherein each of the anisotropic electroconductive particles has a polyhedron shape. 3. The anisotropic electroconductive material of claim 1 , further comprising: a second conductive layer disposed on the second insulating layer; and a third insulating layer disposed on the second conductive layer. 4. The anisotropic electroconductive material of claim 1 , wherein the first and second insulating layers are disposed on opposite sides of the anisotropic electroconductive particle. 5. The anisotropic electroconductive material of claim 1 , wherein the first insulating layer and the first conductive layer have a width of about 10 μm or less. 6. The anisotropic electroconductive material of claim 1 , wherein the first conductive layer comprises at least one metal alloy selected from Sn—Ag-based metal alloys, Sn—Cu-based metal alloys, Sn—Bi-based metal alloys, and/or Sn—Zn-based metal alloys. 7. The anisotropic electroconductive material of claim 6 , wherein the Sn—Ag-based metal alloys, Sn—Cu-based metal alloys, Sn—Bi-based metal alloys, and Sn—Zn-based metal alloys further comprise at least one metal material selected from Ni, Cr, Fe, Co, Ge, P, and/or Ga. 8. The anisotropic electroconductive material of claim 1 , wherein the first insulating layer comprises an insulating resin including at least one of polyethylene, copolymers of polyethylene, polystyrene, copolymers of polystyrene, polymethylmethacrylate, copolymers of polymethylmethacrylate, polyvinyl chloride, copolymers of polyvinyl chloride, polycarbonate, copolymers of polycarbonate, polypropylene, copolymers of polypropylene, acrylic acid ester-based rubber, polyvinyl acetals, polyvinyl butyrals, acrylonitrile-butadiene copolymers, phenoxy resins, thermoplastic epoxy resins or polyurethanes. 9. A circuit connection structure comprising: a display panel; at least one electrode disposed on the display panel; a driving chip disposed opposite the display panel; at least one bump disposed on the driving chip, wherein the at least one bump faces the at least one electrode; and an anisotropic electroconductive material disposed between the display panel and the driving chip, wherein the anisotropic electroconductive material includes an insulating adhesive and a plurality of anisotropic conductive particles dispersed in the insulating adhesive, and wherein the anisotropic conductive particles each include a first insulating layer, a first conductive layer disposed on the first insulating layer, and a second insulating layer disposed on the first conductive layer. 10. The circuit connection structure of claim 9 , wherein each of the anisotropic electroconductive particles has a polyhedron shape. 11. The circuit connection structure of claim 9 , wherein each of the anisotropic electroconductive particles further comprises a second conductive layer disposed on the second insulating layer, and a third insulating layer disposed on the second conductive layer. 12. The circuit connection structure of claim 9 , wherein the first and second insulating layers and the first conductive layer are alternately disposed, and wherein the first and second insulating layers are disposed on opposite sides of the anisotropic electroconductive particle. 13. The circuit connection structure of claim 9 , wherein the first insulating layer and the first conductive layer have a width of about 10 μm or less. 14. The anisotropic electroconductive material of claim 1 , wherein each of the plurality of anisotropic electroconductive particles is narrower than a thickness of the insulating adhesive.
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