Reliability screening of ferroelectric memories in integrated circuits

Patent metadata

Field	Value
Publication number	US-9607717-B2
Application number	US-201414519894-A
Country	US
Kind code	B2
Filing date	Oct 21, 2014
Priority date	Jun 6, 2014
Publication date	Mar 28, 2017
Grant date	Mar 28, 2017

Abstract

A data retention reliability screen of integrated circuits including ferroelectric random access memory (FRAM) arrays. A reference voltage level is determined for each integrated circuit being tested, corresponding to the read of a high polarization capacitance data state. A number of FRAM cells in the integrated circuit are programmed to that data state, and then read at an elevated temperature, with the number of failing cells compared against a pass/fail threshold to determine whether the integrated circuit is vulnerable to long-term data retention failure.

First claim

What is claimed is:

1. A method of testing an integrated circuit including ferroelectric memory cells, comprising the steps of:
determining a first reference voltage at which fewer than a preselected number of a plurality of ferroelectric memory cells of the integrated circuit that are programmed to a first data state return a second data state when read;
determining a second reference voltage corresponding to a selected differential from the first reference voltage;
programming the plurality of the ferroelectric memory cells to the first data state;
heating the integrated circuit to an elevated temperature;
then reading the plurality of ferroelectric memory cells, at the elevated temperature, wherein the reading step comprises, for each of the plurality of ferroelectric memory cells accessing the memory cell and comparing a voltage produced by the memory cell by the accessing step to the second reference voltage; and
then comparing a number of the ferroelectric memory cells from which the second data state, opposite from the first data state, was read by the reading step with a pass/fail threshold number.

2. The method of claim 1 , wherein the programming step and the step of determining the first reference voltage are performed at a first temperature;
and wherein the elevated temperature is greater than the first temperature by approximately 30 deg C. or more.

3. The method of claim 2 , wherein the elevated temperature is approximately 60 deg C. or greater.

4. The method of claim 1 , wherein the programming step is performed at the elevated temperature.

5. The method of claim 4 , further comprising:
waiting for a preselected duration with the integrated circuit at the elevated temperature, after the programming step and before the reading step.

6. The method of claim 1 , wherein the second reference voltage has a magnitude that is a selected fraction of the magnitude of the first reference voltage.

7. The method of claim 1 , wherein each of the plurality of ferroelectric memory cells is of the one transistor-one capacitor (1T-1C) type;
wherein the accessing step comprises:
coupling a first plate of a ferroelectric capacitor in the ferroelectric memory cell to a bit line associated with the ferroelectric memory cell;

and wherein the reading step comprises:
comparing a voltage at the bit line to the second reference voltage.

8. The method of claim 7 , wherein the first data state corresponds to polarization of the ferroelectric capacitor to a first polarization state in which the capacitor retains a voltage of a first polarity in the absence of applied voltages;
and wherein the accessing step further comprises:
biasing the second plate of the ferroelectric capacitor to a voltage, relative to the bit line, of a second polarity opposite to the first polarity.

9. The method of claim 1 , wherein the integrated circuit is one of a plurality of similar integrated circuits formed in a single integrated circuit wafer;
wherein the programming, heating, and reading steps are performed with the integrated circuit in wafer form;
and wherein the wafer is disposed on a heated chuck during the heating and reading steps.

10. The method of claim 1 , further comprising:
performing functional tests of the plurality of ferroelectric memory cells before the programming step.

11. A method of testing an integrated circuit including ferroelectric memory cells, comprising the steps of:
determining a first reference voltage at which fewer than a preselected number of the plurality of ferroelectric memory cells of the integrated circuit that are programmed to a first data state return a second data state when read;
determining a second reference voltage corresponding to a selected differential from the first reference voltage;
programming a plurality of the ferroelectric memory cells to the first data state;
then baking the integrated circuit at an elevated temperature for a selected duration;
then reading each of the plurality of ferroelectric memory cells by:
accessing the memory cell; and
comparing a voltage produced by the memory cell by the accessing step to the second reference voltage; and

then comparing a number of the ferroelectric memory cells from which the second data state, opposite from the first data state, was read by the reading step with a pass/fail threshold number.

12. The method of claim 11 , wherein the second reference voltage has a magnitude that is a selected fraction of the magnitude of the first reference voltage.

13. The method of claim 11 , wherein the programming step and the step of determining the first reference voltage are performed at a first temperature;
and wherein the reading step is performed at a second temperature that is greater than the first temperature by approximately 30 deg C. or more.

14. The method of claim 13 , wherein the second temperature is approximately 60 deg C. or greater.

15. The method of claim 13 , wherein the second temperature is about the same temperature as the elevated temperature at which the baking step bakes the integrated circuit.

16. The method of claim 11 , wherein the programming step, the step of determining the first reference voltage, and the reading step are performed at about the same temperature.

17. The method of claim 16 , wherein the programming step, the step of determining the first reference voltage, and the reading step are performed at room temperature.

18. The method of claim 11 , wherein the baking step comprises:
performing a rapid thermal anneal of the integrated circuit for approximately one second or more.

19. The method of claim 11 , wherein the baking step comprises:
baking the integrated circuit in an oven for approximately thirty minutes or more.

20. The method of claim 11 , wherein the integrated circuit is one of a plurality of similar integrated circuits formed in a single integrated circuit wafer;
and wherein the programming, determining, baking, and reading steps are performed with the integrated circuit in wafer form.

Assignees

• Texas Instruments Inc

Inventors

• Bailey Richard
• Rodriguez John A

Classifications

• G11C29/50016 Primary

  of retention · CPC title

• G11C11/225

  Auxiliary circuits · CPC title