Integrated dual axis fluxgate sensor using double deposition of magnetic material

Patent metadata

Field	Value
Publication number	US-9606193-B2
Application number	US-201615171615-A
Country	US
Kind code	B2
Filing date	Jun 2, 2016
Priority date	May 23, 2014
Publication date	Mar 28, 2017
Grant date	Mar 28, 2017

Abstract

A method of fabricating fluxgate devices to measure the magnetic field in two orthogonal, in plane directions, by using a composite-anisotropic magnetic core structure.

First claim

What is claimed is:

1. An Integrated Dual Axis Fluxgate Sensor, comprising:
a processed semiconductor having a planar top surface including a first SiN layer on the top surface;
a first TetraEthyl OrthoSilicate (TEOS) layer configured to define a form for a bottom layer of a coil;
a first copper conductor layer deposited in the TEOS form thereby forming the bottom layer of the coil;
a second SiN layer overlaying the top surface of the first TEOS layer and the top surface of the first copper conductor layer forming the bottom layer of the coil;
a second TEOS layer overlaying and touching the top surface of the second SiN layer and a third SiN layer overlaying the second TEOS layer;
a titanium layer overlaying and touching the top surface of the third SiN layer;
a laminated magnetic core structure selected from a group of a first magnetic lamination or a second magnetic lamination;
a third TEOS layer overlying the third SiN layer, the bottom layer of the coil and the top surface of the laminated magnetic core structure, wherein the third TEOS layer is configured to define a form for a plurality of openings touching the bottom layer of the coil;
a second copper conductor layer deposited in the plurality of openings forming vias touching and coupling to the bottom layer of the coil;
a third copper layer defined to form the top layer of the coil wherein the third copper layer connects to the vias thereby coupling the top layer of the coil to the bottom layer of the coil; and
a passivation layer touching the top surface of the third TEOS layer and the top surface of the top layer of coil, wherein the passivation layer included openings in the passivation layer to contact the top layer of the coil.

2. The Integrated Dual Axis Fluxgate Sensor of claim 1 , wherein first magnetic lamination is a first stack of alternating layers of NiFe and AlN dielectric layers formed on the top surface of the titanium wherein, the first stack of NiFe layers are aligned in a North-South direction, a layer of ALN formed the top surface of the first stack of alternating layers of NiFe and AlN dielectric, a second stack of alternating layers of NiFe and AlN dielectric layers formed on the top surface of the titanium wherein, the second stack of NiFe layers are aligned in an East-West direction, wherein a the alternating layers of NiFe and AlN dielectric layers are configured to form a magnetic core.

3. The Integrated Dual Axis Fluxgate Sensor of claim 1 , wherein second magnetic lamination is stack of alternating 300 nm layers of NiFe and AlN dielectric layers formed on the top surface of the titanium layer, wherein the odd numbered NiFe layers are aligned in a North-South direction and the even numbered NiFe layers are aligned in an East-West direction.

4. The Integrated Dual Axis Fluxgate Sensor of claim 1 , wherein the first copper conductor layer has a thickness of 4-7 μm.

5. The Integrated Dual Axis Fluxgate Sensor of claim 1 , wherein the NiFe layer has a thickness of 300 nm.

6. The Integrated Dual Axis Fluxgate Sensor of claim 1 , wherein the magnetic core is implemented in a race track configuration.

7. The Integrated Dual Axis Fluxgate Sensor of claim 1 , wherein the magnetic core is implemented in a standard open core configuration.

8. A fluxgate magnetic sensor, comprising:
a semiconductor substrate having a first SiN layer on the top surface portion;
a first oxide layer patterned to define a form for a bottom layer of a coil;
a bottom layer of the coil located in the form and comprising a first copper conductor;
a second SiN layer overlaying the first oxide layer and the first copper conductor layer;
a second oxide layer on the second SiN layer and a third SiN layer on the second oxide layer;
a titanium layer on the third SiN layer;
a laminated magnetic core structure over the titanium layer;
a third oxide layer overlying the third SiN layer, the bottom layer of the coil and the laminated magnetic core structure, wherein the third oxide layer defines a plurality of openings for via portions of the coil;
a second copper conductor layer deposited in the plurality of openings forming the vias, wherein the vias touch and are coupled to the bottom layer of the coil;
a third copper layer defined to form a top layer of the coil wherein the third copper layer connects to the vias thereby coupling the top layer of the coil to the bottom layer of the coil; and
a passivation layer touching the third oxide layer and the top layer of coil, wherein the passivation layer includes openings in the passivation layer to contact the top layer of the coil.

9. The fluxgate magnetic sensor of claim 8 , wherein the laminated magnetic core structure comprises:
a first stack of alternating layers of NiFe and AlN located on the titanium wherein, the NiFe layers in the first stack are aligned in a North-South direction;
a layer of AlN formed on the first stack of alternating layers of NiFe and AlN;
a second stack of alternating layers of NiFe and AlN located on the titanium wherein, the NiFe layers in the second stack are aligned in an East-West direction.

10. The fluxgate magnetic sensor of claim 8 , wherein the laminated magnetic core structure comprises:
a stack of alternating 300 nm layers of NiFe and AlN located on the titanium layer, wherein the odd numbered NiFe layers of the stack are aligned in a North-South direction and the even numbered NiFe layers of the stack are aligned in an East-West direction.

11. The fluxgate magnetic sensor of claim 8 , wherein the first copper conductor layer has a thickness of 4-7 μm.

12. The fluxgate magnetic sensor of claim 8 , wherein the NiFe layer has a thickness of 300 nm.

13. The fluxgate magnetic sensor of claim 8 , wherein the laminated magnetic core structure is implemented in a race track configuration.

14. The fluxgate magnetic sensor of claim 8 , wherein the laminated magnetic core structure is implemented in a standard open core configuration.

15. A fluxgate magnetic sensor, comprising:
a semiconductor substrate having a planar top surface portion including a first SiN layer on the top surface portion;
a first layer defining a form for a bottom layer of a coil;
a bottom layer of the coil located in the form and comprising a first copper conductor;
a second SiN layer overlaying the first layer and the first copper conductor layer;
a second layer on the second SiN layer and a third SiN layer on the second layer;
a titanium layer on the third SiN layer;
a laminated magnetic core structure over the titanium layer, the laminated magnetic core structure comprising alternating layers of NiFe and AlN;
a third layer overlying the third SiN layer, the bottom layer of the coil and the laminated magnetic core structure, wherein the third layer defines a plurality of openings for via portions of the coil;
a second copper conductor layer deposited in the plurality of openings forming the vias, wherein the vias touch and are coupled to the bottom layer of the coil;
a third copper layer defined to form a top layer of the coil wherein the third copper layer connects to the vias thereby coupling the top layer of the coil to the bottom layer of the coil; and
a passivation layer touching the third layer and the top layer of coil, wherein the passivation layer includes openings in the passivation layer to contact the top layer of the coil.

Assignees

• Texas Instruments Inc

Inventors

• Mohan Anuraag
• Lee Dok Won
• French William
• Mazotti Erika L

Classifications

• H01L43/00

  Electricity · mapped topic

• H01L43/12

  Electricity · mapped topic

• H01L29/26

  Electricity · mapped topic

• H01L43/10

  Electricity · mapped topic

• G01R33/04 Primary

  using the flux-gate principle · CPC title