Graphene film, electronic device, and method for manufacturing electronic device
US-2016056240-A1 · Feb 25, 2016 · US
Method of preparing graphene nanoribbon arrays and sensor comprising the same
US9606095B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9606095-B2 |
| Application number | US-201414585750-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 30, 2014 |
| Priority date | Jun 11, 2014 |
| Publication date | Mar 28, 2017 |
| Grant date | Mar 28, 2017 |
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- Title
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Abstract
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Disclosed herein are a method of manufacturing large area graphene nanoribbons, which have no residual layer by interposing a chromium layer between a resist layer and a graphene layer, and a sensor including the graphene nanoribbons.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of preparing graphene nanoribbons, comprising: forming a chromium layer on a graphene layer; forming a resist layer on the chromium layer; patterning the resist layer to form a resist pattern; patterning the chromium layer to form a chromium pattern; and forming a graphene pattern using the chromium pattern as a mask, or the resist pattern and the chromium pattern as a mask. 2. The method of preparing graphene nanoribbons according to claim 1 , wherein forming the graphene pattern comprises: forming the chromium pattern using the resist pattern as a mask; and etching the graphene layer using the chromium pattern as a mask. 3. The method of preparing graphene nanoribbons according to claim 1 , wherein patterning the chromium layer to form the chromium pattern comprises: etching the chromium layer using the resist pattern as a mask. 4. The method of preparing graphene nanoribbons according to claim 1 , wherein patterning the resist layer to form the resist pattern comprises: etching the resist layer using laser interference lithography. 5. The method of preparing graphene nanoribbons according to claim 3 , wherein etching the chromium layer comprises wet etching. 6. The method of preparing graphene nanoribbons according to claim 3 , wherein forming the graphene pattern comprises: removing the resist pattern; after removing the resist pattern, etching the graphene layer using the chromium pattern as a mask; and removing the chromium pattern. 7. The method of preparing graphene nanoribbons according to claim 1 , wherein each of the chromium pattern and the graphene pattern has a width of 100 nm to 200 nm. 8. The method of preparing graphene nanoribbons according to claim 1 , wherein the chromium pattern has a thickness of 10 nm to 20 nm. 9. A sensor comprising graphene nanoribbons prepared by the method of preparing graphene nanoribbons according to claim 1 . 10. The sensor according to claim 9 , comprising: a catalyst layer and electrodes sequentially formed on the graphene nanoribbons. 11. The sensor according to claim 9 , wherein the catalyst layer comprises palladium or platinum.
Assignees
Inventors
Classifications
- G01N33/0036Primary
specially adapted to detect a particular component (physical analysis of gaseous biological material G01N33/497) · CPC title
Chemistry & Metallurgy · mapped topic
Preparation or purification of carbon not covered by groups C01B32/15, C01B32/20, C01B32/25, C01B32/30 · CPC title
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Frequently asked questions
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- What does patent US9606095B2 cover?
- Disclosed herein are a method of manufacturing large area graphene nanoribbons, which have no residual layer by interposing a chromium layer between a resist layer and a graphene layer, and a sensor including the graphene nanoribbons.
- Who is the assignee on this patent?
- Gwangju Inst Science & Tech
- What technology area does this patent fall under?
- Primary CPC classification G01N33/0036. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Mar 28 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).