Gas barrier film, method of producing a gas barrier film, and electronic device

Patent metadata

Field	Value
Publication number	US-9603268-B2
Application number	US-201113988295-A
Country	US
Kind code	B2
Filing date	Nov 18, 2011
Priority date	Nov 19, 2010
Publication date	Mar 21, 2017
Grant date	Mar 21, 2017

Abstract

Provided is a gas barrier film including a base, a first barrier layer containing silicon which is formed on at least one surface of the base, and a second barrier layer containing silicon oxynitride which is formed on the first barrier layer. The water vapor transmission rate (g/m 2 /day) at 40° C. and 90% RH in a structure in which the first barrier layer is formed on the base is R 1 and the water vapor transmission rate (g/m 2 /day) at 40° C. and 90% RH in a structure in which the first barrier layer and the second barrier layer are laminated on the base is R 2 , and the ratio of the water vapor transmission rate R 1 to the water vapor transmission rate R 2 (R 1 /R 2 ) is 80 or more and 5000 or less. Hereby, excellent barrier performance can be exhibited under a high-temperature and high-humidity environment.

First claim

The invention claimed is:

1. A gas barrier film comprising:
a base;
a first barrier layer containing silicon which is formed on at least one surface of the base; and
a second barrier layer consisting of one layer containing silicon oxynitride which is formed on the first barrier layer,
wherein a ratio (R 1 /R 2 ) of a water vapor transmission rate R 1 to a water vapor transmission rate R 2 is 80 or more and 5000 or less, wherein the water vapor transmission rate R 1 (g/m 2 /day) at 40° C. and 90% RH is 1.0 (g/m 2 /day)≧R 1 ≧1.0×10 −3 (g/m 2 /day) and is calculated based on a structure in which one barrier layer containing the first barrier layer is formed on the base, and the water vapor transmission rate R 2 (g/m 2 /day) at 40° C. and 90% RH is 1.0×10 −3 (g/m 2 /day)>R 2 ≧1.0=10 −5 (g/m 2 /day) and is calculated based on a structure in which two barrier layers containing the first barrier layer and the second barrier layer are laminated on the base.

2. The gas barrier film according to claim 1 , wherein the first barrier layer is a silicon nitride film or a silicon oxynitride film formed by using, as a raw material, monosilane (SiH 4 ) as the inorganic silicon compound and at least one gas selected from the group consisting of an ammonia gas, hydrogen gas, nitrogen gas, and nitrogen oxide gas.

3. The gas barrier film according to claim 1 , wherein both of the first barrier layer and the second barrier layer are silicon oxynitride (SiON) films.

4. An electronic device sealed with the gas barrier film according to claim 1 .

5. A solar cell sealed by the gas barrier film according to claim 1 .

6. An illuminator comprising an organic electroluminescence material sealed by the gas barrier film according to claim 1 .

7. A display apparatus comprising an organic electroluminescence material sealed by the gas barrier film according to claim 1 .

8. An organic photoelectric conversion element sealed by the gas barrier film according to claim 1 .

9. An organic electroluminescence element sealed by the gas barrier film according to claim 1 .

10. A method of producing a gas barrier film in which a base; a first barrier layer containing silicon which is formed on at least one surface of the base by a plasma chemical vapor deposition method using at least an inorganic silicon compound as a raw material; and a second barrier layer consisting of one layer containing silicon oxynitride, which is formed on the first barrier layer by applying an inorganic compound-containing liquid and subsequently being subjected to a modification treatment, are laminated in this order,
wherein a ratio (R 1 /R 2 ) of a water vapor transmission rate R 1 to a water vapor transmission rate R 2 is 80 or more and 5000 or less, wherein the water vapor transmission rate R 1 (g/m 2 /day) at 40° C. and 90% RH is 1.0 (g/m 2 /day)≧R 1 ≧1.0×10 −3 (g/m 2 /day) and is calculated based on a structure in which one barrier layer containing the first barrier layer is formed on the base, and the water vapor transmission rate R 2 (g/m 2 /day) at 40° C. and 90% RH is 1.0×10 −3 (g/m 2 /day)>R 2 ≧1.0×10 −5 (g/m 2 /day) and is calculated based on a structure in which two barrier layers containing the first barrier layer and the second barrier layer are laminated on the base.

11. The method of producing a gas barrier film according to claim 10 , wherein the first barrier layer is a silicon nitride film or a silicon oxynitride film formed by using, as a raw material, monosilane (SiH 4 ) as the inorganic silicon compound and at least one gas selected from the group consisting of an ammonia gas, hydrogen gas, nitrogen gas, and nitrogen oxide gas.

12. The method of producing a gas barrier film according to claim 10 , wherein both of the first barrier layer and the second barrier layer are silicon oxynitride (SiON) films.

Assignees

• Suzuki Issei
• Konica Minolta Inc

Inventors

• Suzuki Issei

Classifications

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• H10P14/6328

  Deposition from the gas or vapour phase · CPC title

• H10P14/63

  characterised by the formation processes · CPC title

• H10P14/60

  of insulating materials · CPC title

• H01L21/02263

  Electricity · mapped topic