Rapid thickening of aminosilicones to promote emulsion stability and adhesion of UV-curable quantum dot enhancement film emulsions
US-12122948-B2 · Oct 22, 2024 · US
US9601902B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9601902-B2 |
| Application number | US-201414307057-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 17, 2014 |
| Priority date | Aug 31, 2010 |
| Publication date | Mar 21, 2017 |
| Grant date | Mar 21, 2017 |
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A method of optical signal amplification. Incident photons are received at a photodetector including a doped semiconductor biased by a power source. The photons generate a change in a reflective property, refractive index, or electrical conductivity of the doped semiconductor. For the change in reflective property or refractive index, a first optical signal is reflected off the photodetector to provide a reflected beam, or the photodetector includes a reverse biased semiconductor junction including the doped semiconductor within a laser resonator including a laser medium, wherein a second optical signal is emitted. For the change in electrical conductivity the photodetector includes a reversed biased semiconductor junction that is within an electrical circuit along with an electrically driven light emitting device, where a drive current provided to the light emitting device increases as the electrical conductivity of the photodetector decreases, and the light emitting device emits a third optical signal.
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The invention claimed is: 1. A method of optical signal amplification, comprising: receiving incident photons at a first surface of a photodetector that includes at least a first doped semiconductor which is biased by a power source, wherein said incident photons are in a wavelength range which generates a change in a reflective property of said first doped semiconductor and reflecting a first optical signal off said photodetector to provide a reflected beam, or said photodetector includes a semiconductor junction including said first doped semiconductor and a second doped semiconductor, said semiconductor junction being reverse biased by said power source to provide a reversed biased semiconductor junction that is within a laser resonator including a laser medium, wherein a second optical signal is emitted from said laser resonator. 2. The method of claim 1 , further comprising detecting said reflected beam or said second optical signal. 3. The method of claim 1 , wherein said first optical signal comprises a laser beam. 4. The method of claim 1 , wherein said photodetector is within a vertical-cavity surface-emitting laser (VCSEL). 5. An optical signal amplifying system, comprising: a photodetector that includes at least a first doped semiconductor which is biased by a power source, wherein incident photons in a wavelength range which generates a change in a reflective property of said first doped semiconductor are received at said first doped semiconductor and a light source aligned to reflect a first optical signal from off said photodetector to provide a reflected beam, or said photodetector includes a semiconductor junction including said first doped semiconductor and a second doped semiconductor, said power source reverse biasing said semiconductor junction to provide a reversed biased semiconductor junction that is within a laser resonator including a laser medium, wherein a second optical signal is emitted from said laser resonator. 6. The system of claim 5 , further comprising a detector for detecting said reflected beam or said second optical signal. 7. The system of claim 5 , wherein said first optical signal comprises a laser beam from a laser source. 8. The system of claim 5 , wherein said photodetector is within a vertical-cavity surface-emitting laser (VCSEL).
with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) · CPC title
being Group III-V material · CPC title
being group IV material · CPC title
between a solid phase and a gaseous phase · CPC title
Nanooptics, e.g. quantum optics or photonic crystals · CPC title
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