Light-emitting diode chip

Patent metadata

Field	Value
Publication number	US-9601663-B2
Application number	US-201113819873-A
Country	US
Kind code	B2
Filing date	Aug 17, 2011
Priority date	Sep 2, 2010
Publication date	Mar 21, 2017
Grant date	Mar 21, 2017

Abstract

A light-emitting diode chip includes a semiconductor body including a radiation-generating active region, at least two contact locations electrically contacting the active region, a carrier and a connecting medium arranged between the carrier and the semiconductor body, wherein the semiconductor body includes roughening on outer surfaces facing the carrier, the semiconductor body mechanically connects to the carrier by the connecting medium, the connecting medium locally directly contacts the semiconductor body and the carrier, and the at least two contact locations are arranged on the upper side of the semiconductor body facing away from the carrier.

First claim

The invention claimed is:

1. A light-emitting diode chip comprising:
a semiconductor body having a radiation-generating active region,
at least two contact locations electrically contacting the active region,
a carrier, and
a connecting medium arranged between the carrier and the semiconductor body, wherein
the semiconductor body comprises a roughening on outer surfaces facing the carrier,
the semiconductor body mechanically connects to the carrier by the connecting medium,
the connecting medium locally directly contacts the semiconductor body and the carrier,
the at least two contact locations are arranged on the upper side of the semiconductor body facing away from the carrier,
the roughening is arranged between the semiconductor body and the carrier,
the roughening comprises elevations and depressions in the material comprising the semiconductor body, wherein at least some of the elevations completely reach through the connection medium, and
peaks of the elevations protrude from the connecting medium, said protruding peaks being free of the connecting medium and in direct physical contact with the carrier.

2. The light-emitting diode chip according to claim 1 , wherein
the carrier is radiation-transmissive,
the upper side of the carrier facing the semiconductor body is a sapphire a-plane,
the connecting medium is an electrically insulating adhesive,
the connecting medium is radiation-transmissive,
the semiconductor body locally directly contacts the carrier, and
the roughening comprises elevations and depressions, the connecting medium arranged at least locally in the depressions and peaks of the elevations are at least locally free from connecting medium.

3. The light-emitting diode chip according to claim 1 , wherein
the connecting medium is an electrically insulating adhesive,
the connecting medium is radiation-transmissive,
the semiconductor body locally directly contacts the carrier, and
the roughening comprises elevations and depressions, the connecting medium arranged at least locally in the depressions and peaks of the elevations are at least locally free from connecting medium.

4. The light-emitting diode chip according to claim 1 , wherein the carrier is radiation-transmissive.

5. The light-emitting diode chip according to claim 1 , wherein the upper side of the carrier facing the semiconductor body is a sapphire a-plane.

6. The light-emitting diode chip according to claim 1 , wherein the carrier is radiation-reflecting.

7. The light-emitting diode chip according to claim 1 , wherein the carrier comprises, on its upper side facing the semiconductor body, a reflective layer formed reflectively to reflect electromagnetic radiation generated in the active region.

8. The light-emitting diode chip according to claim 1 , wherein the carrier comprises a metallic material.

9. The light-emitting diode chip according to claim 1 , wherein the carrier is radiation-scattering.

10. The light-emitting diode chip according to claim 1 , wherein the carrier comprises a ceramic material.

11. The light-emitting diode chip according to claim 1 , wherein regions of the outer surface of the carrier not covered by the semiconductor body are covered with a further radiation-reflecting layer, the radiation-reflecting layer formed reflectively to reflect electromagnetic radiation generated in the active region.

12. The light-emitting diode chip according to claim 1 , having at least two semiconductor bodies, each semiconductor body comprising a radiation-generating active region, and the semiconductor bodies connected in parallel and/or in series with one another.

13. The light-emitting diode chip according to claim 1 , wherein the side of the semiconductor body facing the carrier comprises an n-type conducting semiconductor material, and at least one through-contact extends from the side facing away from the carrier, from one of the at least two contact locations, through the active region to the n-type conducting semiconductor material.

14. A light-emitting diode chip comprising:
a semiconductor body comprising a radiation-generating active region,
at least two contact locations electrically contacting the active region,
a carrier, and
a connecting medium arranged between the carrier and the semiconductor body, wherein
the semiconductor body comprises a roughening on its outer surfaces facing the carrier,
the semiconductor body mechanically connects to the carrier by the connecting medium,
the connecting medium locally directly contacts the semiconductor body and the carrier,
the at least two contact locations are arranged on the upper side of the semiconductor body facing away from the carrier,
the connecting medium is an electrically insulating adhesive,
the connecting medium is radiation-transmissive,
the semiconductor body locally directly contacts the carrier,
the roughening comprises elevations and depressions in the material comprising the semiconductor body, wherein at least some of the elevations completely reach through the connection medium,
the connecting medium arranged at least locally in the depressions and peaks of the elevations are at least locally free from connecting medium,
the roughening is arranged between the semiconductor body and the carrier, and
peaks of the elevations protrude from the connecting medium, said protruding peaks being free of the connecting medium and in direct contact with the carrier.

15. The light-emitting diode chip according to claim 1 , wherein side faces of the elevations which completely reach through the connecting medium are covered by the connecting medium.

16. The light-emitting diode chip according to claim 14 , wherein side faces of the elevations which completely reach through the connecting medium are covered by the connecting medium.

17. The light-emitting diode chip according to claim 1 , wherein parts of the semiconductor body are arranged between the connecting medium and the carrier.

18. The light-emitting diode chip according to claim 14 , wherein parts of the semiconductor body are arranged between the connecting medium and the carrier.

19. The light-emitting diode chip according to claim 1 , wherein the reflective layer is not subject to an electric field.

Assignees

• Höppel Lutz
• Von Malm Norwin
• Sabathil Matthias
• Osram Opto Semiconductors Gmbh

Inventors

• Höppel Lutz
• Von Malm Norwin
• Sabathil Matthias

Classifications

• H10W90/00

  Package configurations · CPC title

• H01L33/0079

  Electricity · mapped topic

• H01L33/22 Primary

  Electricity · mapped topic

• H10H20/018

  Bonding of wafers · CPC title

• H10H20/82 Primary

  Roughened surfaces, e.g. at the interface between epitaxial layers · CPC title