Three-dimensionally integrated circuit devices including oxidation suppression layers

Patent metadata

Field	Value
Publication number	US-9601577-B1
Application number	US-201615251510-A
Country	US
Kind code	B1
Filing date	Aug 30, 2016
Priority date	Oct 8, 2015
Publication date	Mar 21, 2017
Grant date	Mar 21, 2017

Abstract

A vertically integrated circuit device can include a substrate having a first region reserved for first functional circuits of the vertically integrated circuit device, where the first functional circuits has a substantially constant top surface level across the first region and having a second region reserved for second functional circuits of the vertically integrated circuit device and spaced apart from the first region. The second functional circuits can have a varied top surface level across the second region. A doped oxidation suppressing material can be included in the substrate and can extend from the first region to the second region at an interface of the substrate with the first functional circuits and the second functional circuits, respectively.

First claim

What is claimed is:

1. A three-dimensional semiconductor memory device, comprising:
an oxidation suppressing layer in a substrate;
a plurality of stacks on the oxidation suppressing layer, each of the stacks includes a horizontal gate insulating layer on the oxidation suppressing layer, and insulating layers and electrodes alternately and vertically stacked on the horizontal gate insulating layer; and
a plurality of vertical structures passing through the stacks and connected to the substrate.

2. The device of claim 1 , wherein the vertical structures have respective bottom surfaces that extend beyond the oxidation suppressing layer into the substrate.

3. The device of claim 1 , wherein the oxidation suppressing layer includes carbon C, nitrogen N, or fluorine F.

4. The device of claim 1 , wherein the oxidation suppressing layer has a thickness less than a thickness of the horizontal gate insulating layer.

5. The device of claim 1 , wherein the substrate includes a cell array region, a peripheral circuit region, and a connection region between the cell array region and the peripheral circuit region,
the stacks and the oxidation suppressing layer extends from the cell array region to the connection region,
the stack on the connection region has a staircase structure, and
a thickness of the stack on the connection region decreases stepwise in a direction toward the peripheral circuit region.

6. A three-dimensional semiconductor memory device, comprising:
a substrate including a cell array region, a peripheral circuit region, and a connection region between the cell array region and the peripheral circuit region;
a plurality of stacks extending from the cell array region to the connection region, wherein each stack includes a horizontal gate insulating layer, and insulating layers and electrodes alternately and vertically stacked on the horizontal gate insulating layer; and
an oxidation suppressing layer in the substrate, the oxidation suppressing layer in contact with the horizontal gate insulating layer.

7. The device of claim 6 , wherein the plurality of stacks on the connection region has a staircase structure, and
a thickness of the stack on the connection region decreases stepwise in a direction toward the peripheral circuit region.

8. The device of claim 6 , wherein the horizontal gate insulating layer has substantially equal thickness in the cell array region and in the connection region.

9. The device of claim 6 , further comprising a plurality of vertical structures in the cell array region,
wherein the vertical structures penetrate the stacks and the oxidation suppressing layer to be connected to the substrate.

10. The device of claim 6 , further comprising a peripheral logic structure on the peripheral circuit region of the substrate, the peripheral logic structure spaced apart from the stacks,
wherein a portion of the oxidation suppressing layer is disposed between the stacks and the peripheral logic structure.

11. The device of claim 6 , wherein the oxidation suppressing layer has a thickness less than a thickness of the horizontal gate insulating layer.

12. A vertically integrated circuit device, comprising:
a substrate;
a first region of the substrate reserved for first functional circuits of the vertically integrated circuit device, the first functional circuits having a substantially constant top surface level across the first region;
a second region of the substrate reserved for second functional circuits of the vertically integrated circuit device and spaced apart from the first region, the second functional circuits having a varied top surface level across the second region; and
a doped oxidation suppressing material in the substrate extending from the first region to the second region at an interface of the substrate with the first functional circuits and the second functional circuits, respectively.

13. The device of claim 12 wherein the device comprises a three-dimensional semiconductor memory device, the first region comprises a cell array region, and the second region comprises a connection region directly adjacent to the cell array region on the substrate.

14. The device of claim 13 wherein the varied top surface level across the connection region has a staircase profile that descends away from the cell array region.

15. The device of claim 14 further comprising:
a horizontal gate insulating layer contacting the doped oxidation suppressing material, the horizontal gate insulating layer included in respective ground select transistors in the cell array region and in the connection region and having a uniform thickness in the cell array region and in the connection region.

16. The device of claim 15 wherein the doped oxidation suppressing material has a thickness that is less than a thickness of the horizontal gate insulating layer.

17. The device of claim 15 wherein the doped oxidation suppressing material comprises carbon C, nitrogen N, or fluorine F.

18. The device of claim 13 wherein the three-dimensional semiconductor memory device includes vertical stacks of memory cell transistors in the cell array region, the vertical stacks each including a lower semiconductor pattern that penetrates into the substrate beyond a lower limit of the doped oxidation suppressing material.

19. The device of claim 18 further comprising:
a vertical gate insulating layer directly on the lower semiconductor pattern adjacent to the horizontal gate insulating layer.

20. The device of claim 19 wherein the vertical gate insulating layer has a convex profile.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Lee Dong-Sik
• Kim Youngwoo
• Shin Jinhyun
• Lee Jung Hoon

Classifications

• H10P30/208

  of electrically inactive species · CPC title

• H10P30/204

  into Group IV semiconductors · CPC title

• H10D64/01332

  Making the insulator · CPC title

• H01L27/11582

  Electricity · mapped topic

• H01L27/11578

  Electricity · mapped topic