Solid-state image capturing apparatus and camera

Patent metadata

Field	Value
Publication number	US-9601536-B2
Application number	US-201514610123-A
Country	US
Kind code	B2
Filing date	Jan 30, 2015
Priority date	Feb 14, 2014
Publication date	Mar 21, 2017
Grant date	Mar 21, 2017

Abstract

A solid-state image capturing apparatus, comprising a plurality of photoelectric conversion portions disposed in a first semiconductor region of a first conductivity type, a first portion of the first conductivity type disposed in the first semiconductor region and configured to supply a first potential to the first semiconductor region, and a second semiconductor region of a second conductivity type configured to receive a second potential, wherein the first portion is disposed between first and second photoelectric conversion portions neighboring each other, and the second semiconductor region is disposed between the first portion and each of the first and second photoelectric conversion portions.

First claim

What is claimed is:

1. A solid-state image capturing apparatus comprising:
a first semiconductor region of a first conductivity type provided in a substrate;
a first photoelectric conversion portion and a second photoelectric portion, each disposed in the first semiconductor region, the first photoelectric conversion portion and the second photoelectric conversion portion being adjacent to each other;
a first portion of the first conductivity type disposed in the first semiconductor region and configured to supply a first potential to the first semiconductor region; and
two second semiconductor regions, in a cross sectional view including the first photoelectric conversion portion and the second photoelectric conversion portion, of a second conductivity type, each of the two second semiconductor regions configured to receive a second potential different from the first potential,
wherein, in a planar view for an upper face of the substrate,
the first portion is disposed between the first photoelectric conversion portion and the second photoelectric conversion portion, and
one of the two second semiconductor regions is disposed between the first portion and the first photoelectric conversion portion and the other of the two second semiconductor regions is disposed between the first portion and the second photoelectric conversion portion.

2. The solid-state image capturing apparatus according to claim 1 , further comprising
a first electrode electrically connected to the first portion; and
a second electrode electrically connected to the one of the second semiconductor regions and configured to supply the second potential to the one of the second semiconductor regions,
wherein the second electrode is disposed, in the planar view, between the first electrode and the first photoelectric conversion portion.

3. The solid-state image capturing apparatus according to claim 1 , further comprising a pixel including at least one of the first photoelectric conversion portion and the second photoelectric conversion portion,
wherein the pixel includes at least one MOS transistor, and the one of the second semiconductor regions is a drain of the at least one MOS transistor.

4. The solid-state image capturing apparatus according to claim 3 , wherein the at least one MOS transistor includes at least one of:
an amplification transistor configured to amplify a signal based on a charge generated in the first photoelectric conversion portion; and
a reset transistor configured to reset the pixel.

5. The solid-state image capturing apparatus according to claim 1 , further comprising a unit configured to read out signals from the first photoelectric conversion portion and the second photoelectric conversion portion, wherein
a source and a drain of at least one MOS transistor included in the unit have the second conductivity type, and
the one of the second semiconductor regions has an impurity concentration lower than those of the source and the drain.

6. The solid-state image capturing apparatus according to claim 1 , wherein, in the planar view, the two second semiconductor regions surround the first portion.

7. The solid-state image capturing apparatus according to claim 6 , wherein the first semiconductor region extends below the first photoelectric conversion portion and the second photoelectric conversion portion through a region under the second semiconductor regions.

8. The solid-state image capturing apparatus according to claim 1 , further comprising an element isolation portion including an insulating material disposed between the first portion and the one of the second semiconductor regions.

9. The solid-state image capturing apparatus according to claim 8 , wherein the first semiconductor region extends below the first photoelectric conversion portion through a region under the element isolation portion.

10. The solid-state image capturing apparatus according to claim 1 , wherein the one of the second semiconductor regions extends to a position deeper than the first photoelectric conversion portion.

11. The solid-state image capturing apparatus according to claim 1 , wherein each of the first photoelectric conversion portion and the second photoelectric conversion portion includes a third semiconductor region of the second conductivity type configured to form a pn junction with the first semiconductor region.

12. The solid-state image capturing apparatus according to claim 1 , wherein the second potential is a power supply potential.

13. The solid-state image capturing apparatus according to claim 1 , wherein the first potential is a ground potential.

14. The solid-state image capturing apparatus according to claim 1 , wherein the two second semiconductor regions are integrally provided to form a single semiconductor region.

15. A camera comprising:
a solid-state image capturing apparatus comprising:
a first semiconductor region of a first conductivity type provided in a substrate;
a first photoelectric conversion portion and a second photoelectric conversion portion, each disposed in the first semiconductor region, the first photoelectric conversion portion and the second photoelectric conversion portion being adjacent to each other;
a first portion of the first conductivity type disposed in the first semiconductor region and configured to supply a first potential to the first semiconductor region; and
two second semiconductor regions, in a cross sectional view including the first photoelectric conversion portion and the second photoelectric conversion portion, of a second conductivity type, each of the two second semiconductor regions configured to receive a second potential different from the first potential,
wherein, in a planar view for an upper face of the substrate,
the first portion is disposed between the first photoelectric conversion portion and the second photoelectric conversion portion, and
one of the two second semiconductor regions is disposed between the first portion and the first photoelectric conversion portion and the other the two second semiconductor regions is disposed between the first portion and the second photoelectric conversion portion; and

a processor configured to process a signal output from the solid-state image capturing apparatus.

16. A solid-state image capturing apparatus comprising:
a first semiconductor region of a first conductivity type provided in a substrate;
a first photoelectric conversion portion and a second photoelectric conversion portion, each disposed in the first semiconductor region, the first photoelectric conversion portion and the second photoelectric conversion portion being adjacent to each other;
a first portion of the first conductivity type disposed in the first semiconductor region and configured to supply a first potential to the first semiconductor region; and
a second semiconductor region of a second conductivity type configured to receive a second potential different from the first potential,
wherein, in a planar view for an upper face of the substrate,
the first portion is disposed between the first photoelectric conversion portion and the second photoelectric conversion portion, and
the second semiconductor region is disposed between the first portion and the first photoelectric conversion portion and between the first portion and the second photoelectric conversion portion, and surrounds the first portion.

17. A camera comprising:
a solid-state image capturing apparatus comprising:
a first semiconductor region of a first conductivity type provided in a substrate;
a first photo

Assignees

• Canon Kk

Inventors

• Johnson Michiko

Classifications

• H01L27/14612

  Electricity · mapped topic

• H01L27/14603

  Electricity · mapped topic

• H01L27/1463 Primary

  Electricity · mapped topic

• H10F39/8037

  the integrated elements comprising a transistor · CPC title

• H10F39/802

  Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes · CPC title