Method of manufacturing semiconductor device, including film having uniform thickness

Patent metadata

Field	Value
Publication number	US-9601326-B2
Application number	US-201514601634-A
Country	US
Kind code	B2
Filing date	Jan 21, 2015
Priority date	Jan 23, 2014
Publication date	Mar 21, 2017
Grant date	Mar 21, 2017

Abstract

A method of manufacturing a semiconductor device is provided which includes a step of performing a cycle, a predetermined number of times, to form a film on a substrate, the cycle including non-simultaneously performing: (a) a step of supplying a source gas to the substrate in a process chamber; (b) a step of removing the source gas from the process chamber; (c) a step of supplying a reactive gas having a chemical structure different from that of the source gas to the substrate in the process chamber; and (d) a step of removing the reactive gas from the process chamber, wherein the (d) includes alternately repeating: (d-1) a step of exhausting an inside of the process chamber to depressurize the inside of the process chamber; and (d-2) a step of purging the inside of the process chamber using an inert gas.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device, comprising: performing a cycle a predetermined number of times to form a film on a substrate, the cycle comprising non-simultaneously performing:
(a) supplying a source gas to the substrate in a process chamber;
(b) removing the source gas from the process chamber;
(c) supplying a reactive gas including a hydrogen nitride-based gas to the substrate in the process chamber, the reactive gas having a chemical structure different from that of the source gas; and
(d) removing the reactive gas from the process chamber,
wherein the (b) comprises alternately performing:
(b-1) exhausting an inside of the process chamber to depressurize the inside of the process chamber; and
(b-2) purging the inside of the process chamber using an inert gas, wherein the (d) comprises alternately performing:
(d-1) exhausting the inside of the process chamber to depressurize the inside of the process chamber; and
(d-2) purging the inside of the process chamber using the inert gas, and

wherein a number of times the (d-1) and the (d-2) are alternately performed in the (d) is greater than a number of times the (b-1) and the (b-2) are alternately performed in the (b).

2. The method of claim 1 , wherein a flow rate of the inert gas supplied in the (d-2) is greater than a flow rate of the inert gas supplied in the (b-2).

3. The method of claim 1 , wherein a deviation of an inner pressure of the process chamber per unit time in the (d) is greater than a deviation of the inner pressure of the process chamber per unit time in the (b).

4. The method of claim 1 , wherein the reactive gas comprises at least one selected from the group consisting of ammonia gas, hydrazine gas and diazene gas.

5. The method of claim 1 , wherein the (d-1) and the (d-2) are alternately performed two or more times in the (d), and
the (b-1) and the (b-2) are alternately performed once in the (b).

6. A method of manufacturing a semiconductor device, comprising: performing a cycle a predetermined number of times to form a film on a substrate, the cycle comprising non-simultaneously performing:
(a) supplying a source gas to the substrate in a process chamber;
(b) removing the source gas from the process chamber;
(c) supplying a first reactive gas including a hydrogen nitride-based gas to the substrate in the process chamber, the first reactive gas having a chemical structure different from that of the source gas;
(d) removing the first reactive gas from the process chamber;
(e) supplying a second reactive gas having a chemical structure different from those of the source gas and the first reactive gas to the substrate in the process chamber; and
(f) removing the second reactive gas from the process chamber,
wherein
the (b) comprises alternately performing:
(b-1) exhausting an inside of the process chamber to depressurize the inside of the process chamber; and
(b-2) purging the inside of the process chamber using an inert gas, wherein the (d) comprises alternately performing:
(d-1) exhausting the inside of the process chamber to depressurize the inside of the process chamber; and
(d-2) purging the inside of the process chamber using the inert gas,

wherein the (f) comprises alternately performing:
(f-1) exhausting the inside of the process chamber to depressurize the inside of the process chamber; and
(f-2) purging the inside of the process chamber using the inert gas, and wherein

(i) a number of times the (d-1) and the (d-2) are alternately performed in the (d) is greater than a number of times the (b-1) and the (b-2) are alternately performed in the (b), and
(ii) the number of times the (d-1) and the (d-2) are alternately performed in the (d) is greater than a number of times the (f-1) and the (f-2) are alternately performed in the (f).

7. The method of claim 6 , wherein a flow rate of the inert gas in the (d-2) is greater than each flow rate of the inert gas in the (b-2) and the (f-2).

8. The method of claim 6 , wherein a deviation of an inner pressure of the process chamber per unit time in the (d) is greater than deviations of the inner pressure of the process chamber per unit time in the (b) and the (f).

9. The method of claim 6 , wherein the (d-1) and the (d-2) are alternately performed two or more times in the (d),
the (b-1) and the (b-2) are alternately performed once in the (b), and
the (f-1) and the (f-2) are alternately performed once in the (f).

10. The method of claim 6 , wherein the first reactive gas comprises at least one selected from the group consisting of ammonia gas, hydrazine gas and diazene gas, and
the second reactive gas comprises at least one selected from the group consisting of oxygen-containing gas, carbon-containing gas and boron-containing gas.

11. A method of manufacturing a semiconductor device, comprising: performing a cycle a predetermined number of times to form a film on a substrate, the cycle comprising non-simultaneously performing:
(a) supplying a source gas to the substrate in the process chamber;
(b) removing the source gas from the process chamber;
(c) supplying to the substrate in the process chamber:
a first reactive gas including a hydrogen nitride-based gas, the first reactive gas having a chemical structure different from that of the source gas; and
a second reactive gas having a chemical structure different from those of the source gas and the first reactive gas; and

(d) removing the first reactive gas and the second reactive gas from the process chamber,
wherein the (b) comprises alternately performing:
(b-1) exhausting an inside of the process chamber to depressurize the inside of the process chamber; and
(b-2) purging the inside of the process chamber using an inert gas, wherein the (d) comprises alternately performing:
(d-1) exhausting the inside of the process chamber to depressurize the inside of the process chamber; and
(d-2) purging the inside of the process chamber using the inert gas, and

wherein a number of times the (d-1) and the (d-2) are alternately performed in the (d) is greater than a number of times the (b-1) and the (b-2) are alternately performed in the (b).

12. The method of claim 11 , wherein a flow rate of the inert gas in the (d-2) is greater than a flow rate of the inert gas in the (b-2).

13. The method of claim 11 , wherein a deviation of an inner pressure of the process chamber per unit time in the (d) is greater than a deviation of the inner pressure of the process chamber per unit time in the (b).

14. The method of claim 11 , wherein the (d-1) and the (d-2) are alternately performed two or more times in the (d), and
the (b-1) and the (b-2) are alternately performed once in the (b).

15. The method of claim 11 , wherein the first reactive gas comprises at least one selected from the group consisting of ammonia gas, hydrazine gas and diazene gas, and
the second reactive gas comprises at least one selected from the group consisting of oxygen-containing gas, carbon-containing gas and boron-containing gas.

Assignees

• Hitachi Int Electric Inc

Inventors

• Akae Naonori
• Yotsutani Tatsuya

Classifications

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/6927

  the material being a silicon oxynitride, e.g. SiON or SiON:H · CPC title

• H10P14/6922

  the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title

• H10P14/6905

  being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H · CPC title

• H10P14/6682

  the compound being a silane, e.g. disilane, methylsilane or chlorosilane · CPC title