Cross point memory control

US9601193B1 · US · B1

Patent metadata
FieldValue
Publication numberUS-9601193-B1
Application numberUS-201514853246-A
CountryUS
Kind codeB1
Filing dateSep 14, 2015
Priority dateSep 14, 2015
Publication dateMar 21, 2017
Grant dateMar 21, 2017

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

The present disclosure relates to phase change memory control. An apparatus includes a memory controller. The memory controller includes a word line (WL) control module and a bit line (BL) control module. The memory controller is to determine a WL address based, at least in part, on a received memory address. The memory controller is further to determine a BL address. The apparatus further includes a parameter selection module to select a value of a control parameter based, at least in part, on at least one of the WL address and/or the BL address.

First claim

Opening claim text (preview).

What is claimed is: 1. An apparatus comprising: a memory controller comprising a word line (WL) control module, a bit line (BL) control module and a control information store for storing control information, wherein the control information store coupled to the word line control module and the bit line control module, the memory controller to determine a WL address based, at least in part, on a received memory address, the memory controller further to determine a BL address; and a parameter selection module to select a value of a control parameter based, at least in part, on the WL address, the BL address, or a combination thereof. 2. The apparatus of claim 1 , wherein the control parameter is related to selecting a memory access operation on a target memory cell, performing a memory access operation on a target memory cell, or a combination thereof. 3. The apparatus of claim 1 , wherein the control parameter is selected from a group comprising a source voltage, a source current amplitude, a selection time interval duration, a sensing time interval duration and a source pulse duration. 4. The apparatus of claim 1 , wherein the selected value is associated with a range of WL addresses, a range of BL addresses, or a combination thereof. 5. The apparatus of claim 1 , wherein the control information store stores control information comprising at least one value for each of a first plurality of control parameters and at least one of associated region information, an associated WL address range, an associated BL address range, or a combination thereof. 6. The apparatus of claim 1 , wherein the WL control module, the BL control module, or a combination thereof comprises a control parameter store to store at least one value for each of a second plurality of control parameters. 7. A method comprising: determining, by a memory controller, a word line (WL) address based, at least in part, on a received memory address; determining, by the memory controller, a bit line (BL) address; storing, by a control information store, control information, wherein the control information store coupled to a word line control module and a bit line control module; and selecting, by a parameter selection module, a value of a control parameter based, at least in part, on the WL address, the BL address, or a combination thereof. 8. The method of claim 7 , wherein the control parameter is related to selecting a memory access operation on a target memory cell, performing a memory access operation on a target memory cell, or a combination thereof. 9. The method of claim 7 , wherein the control parameter is selected from a group comprising a source voltage, a source current amplitude, a selection time interval duration, a sensing time interval duration and a source pulse duration. 10. The method of claim 7 , wherein the selected value is associated with a range of WL addresses, a range of BL addresses, or a combination thereof. 11. The method of claim 7 , wherein the control information comprises at least one value for each of a first plurality of control parameters and associated region information, an associated WL address range, an associated BL address range, or a combination thereof. 12. The method of claim 7 , further comprising: storing, by a WL control module, a BL control module, or a combination thereof, at least one value for each of a second plurality of control parameters to a control parameter store. 13. A system comprising: a processor; a cross-point memory array comprising a memory cell, a word line (WL) and a bit line (BL), the memory cell coupled between the word line and the bit line; and a memory controller comprising: a word line (WL) control module; a bit line (BL) control module; a control information store for storing control information, wherein the control information store coupled to the word line control module and the bit line control module; and a parameter selection module, the memory controller to determine a WL address based, at least in part, on a received memory address, the memory controller further to determine a BL address, the parameter selection module to select a value of a control parameter based, at least in part, on the WL address, the BL address, or a combination thereof. 14. The system of claim 13 , wherein the control parameter is related to selecting a memory access operation on a target memory cell, performing a memory access operation on a target memory cell, or a combination thereof. 15. The system of claim 13 , wherein the control parameter is selected from a group comprising a source voltage, a source current amplitude, a selection time interval duration, a sensing time interval duration and a source pulse duration. 16. The system of claim 13 , wherein the selected value is associated with a range of WL addresses, a range of BL addresses, or a combination thereof. 17. The system of claim 13 , wherein the control information store stores control information comprising at least one value for each of a first plurality of control parameters and associated region information, an associated WL address range, an associated BL address range, or a combination thereof. 18. The system of claim 13 , wherein at least one of the WL control module, the BL control module, or a combination thereof comprises a control parameter store to store at least one value for each of a second plurality of control parameters. 19. The system of claim 13 , further comprising at least one of a network interface communicatively coupled to the processor and a display communicatively coupled to the processor.

Assignees

Inventors

Classifications

  • Address interface arrangements, e.g. address buffers · CPC title

  • Read process characterized by the shape, e.g. form, length, amplitude of the read pulse · CPC title

  • Word-line or row circuits · CPC title

  • Erasing, e.g. resetting, circuits or methods · CPC title

  • comprising metal oxide memory material, e.g. perovskites · CPC title

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What does patent US9601193B1 cover?
The present disclosure relates to phase change memory control. An apparatus includes a memory controller. The memory controller includes a word line (WL) control module and a bit line (BL) control module. The memory controller is to determine a WL address based, at least in part, on a received memory address. The memory controller is further to determine a BL address. The apparatus further incl…
Who is the assignee on this patent?
Intel Corp
What technology area does this patent fall under?
Primary CPC classification G11C13/0028. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Mar 21 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).