Interlayer for device including NFT and cladding layers
US-8945731-B2 · Feb 3, 2015 · US
US9601135B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9601135-B2 |
| Application number | US-201514607248-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 28, 2015 |
| Priority date | Jun 29, 2012 |
| Publication date | Mar 21, 2017 |
| Grant date | Mar 21, 2017 |
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A device that includes a near field transducer (NFT); at least one cladding layer adjacent the NFT; and a discontinuous metal layer positioned between the NFT and the at least one cladding layer.
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What is claimed is: 1. A device comprising: a near field transducer (NFT); at least one cladding layer adjacent the NFT, the cladding layer comprising SiO 2 ; Al 2 O 3 ; MgO; TaSiO x ; MgF 2 ; SiON; Y 2 O 3 ; binary oxides of a metal oxide (MeO x ) and AlO x , where Me is Ti, Hf, Zr, Nb, and Ta and 0<x<3.0; binary oxides of Y 2 O 3 and AlO x ; binary oxides of SiO 2 and Al 2 O 3 ; binary oxides of Y 2 O 3 and SiO 2 ; binary oxides of MeO x and SiO 2 where Me is Ti, Hf, Zr, Nb, and Ta and 0<x<3.0; SiO x N y , where 0<x<2.0 and 0<y<1.33; or combinations thereof; and a discontinuous metal layer positioned between the NFT and the at least one cladding layer. 2. The device according to claim 1 , wherein the at least one cladding layer comprises: SiO 2 , Al 2 O 3 , MgO, Y 2 O 3 , TaSiO x , MgF 2 , SiON, or combinations thereof. 3. The device according to claim 1 , wherein the NFT comprises gold (Au), gold (Au) doped with another material, silver (Ag), silver (Ag) doped with another material, copper (Cu), or aluminum (Al). 4. The device according to claim 1 , wherein the NFT comprises gold. 5. The device according to claim 1 , wherein the discontinuous metal layer has an average thickness of from about 2.5 Å to about 50 Å. 6. The device according to claim 1 , wherein the discontinuous metal layer has an average thickness of from about 5 Å to about 30 Å. 7. The device according to claim 1 , wherein the discontinuous metal layer has an average thickness of from about 5 Å to about 20 Å. 8. The device according to claim 1 , wherein the discontinuous metal layer comprises an early 3d transition metals having large populations of unfilled states at the Fermi level. 9. The device according to claim 1 , wherein the discontinuous metal layer comprises a material selected from: Zr, Ti, Y, Sc, Al, Ru, V, Si, Ge, Ta, and Sn. 10. The device according to claim 1 , wherein the discontinuous metal layer comprises Zr. 11. A device comprising: a near field transducer (NFT); at least one cladding layer adjacent the NFT, the cladding layer comprising SiO 2 , Al 2 O 3 , MgO, Y 2 O 3 , TaSiO x , MgF 2 , SiON, or combinations thereof; and a discontinuous metal layer positioned between the NFT and the at least one cladding layer. 12. The device according to claim 11 , wherein the NFT comprises gold (Au), gold (Au) doped with another material, silver (Ag), silver (Ag) doped with another material, copper (Cu), or aluminum (Al). 13. The device according to claim 11 , wherein the NFT comprises gold. 14. The device according to claim 11 , wherein the discontinuous metal layer has an average thickness of from about 2.5 Å to about 50 Å. 15. The device according to claim 11 , wherein the discontinuous metal layer has an average thickness of from about 5 Å to about 30 Å. 16. The device according to claim 11 , wherein the discontinuous metal layer has an average thickness of from about 5 Å to about 20 Å. 17. A device comprising: an energy source; a near field transducer (NFT) configured to receive energy from the energy source; at least one cladding layer adjacent the NFT, the at least one cladding layer comprising SiO 2 , Al 2 O 3 , MgO, Y 2 O 3 , TaSiO x , MgF 2 , SiON, or combinations thereof; and a discontinuous metal layer positioned between the NFT and the at least one cladding layer. 18. The device according to claim 17 , wherein the energy source comprises a laser. 19. The device according to claim 17 , wherein the discontinuous metal layer comprises a material selected from: Zr, Ti, Y, Sc, Al, Ru, V, Si, Ge, Ta, and Sn. 20. The device according to claim 17 , wherein the discontinuous metal layer comprises Zr.
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