Composition for pattern formation, and pattern-forming method

Patent metadata

Field	Value
Publication number	US-9599892-B2
Application number	US-201514668335-A
Country	US
Kind code	B2
Filing date	Mar 25, 2015
Priority date	Mar 28, 2014
Publication date	Mar 21, 2017
Grant date	Mar 21, 2017

Abstract

A composition for pattern formation includes a block copolymer and a solvent. The block copolymer includes a group including a reactive group on at least one end of a main chain of the block copolymer. A pattern-forming method includes providing a directed self-assembling film directly or indirectly on a substrate using the composition. The directed self-assembling film includes a phase separation structure which includes a plurality of phases. A part of the plurality of phases of the directed self-assembling film is removed.

First claim

What is claimed is:

1. A pattern-forming method comprising:
applying a pattern-forming composition directly or indirectly on a substrate to provide a directed self-assembling film, the directed self-assembling film comprising a phase separation structure which comprises a plurality of phases; and
removing a part of the plurality of phases of the directed self-assembling film,
wherein the pattern-forming composition comprises:
a block copolymer comprising an end group comprising a reactive group on at least one end of a main chain of the block copolymer; and
a solvent, and

wherein the reactive group is an ethylenic carbon-carbon double bond-containing group, a carbon-carbon triple bond-containing group, an oxetanyl group, or a combination thereof.

2. The pattern-forming method according to claim 1 , further comprising heating during or after providing the directed self-assembling film.

3. The pattern-forming method according to claim 1 ,
further comprising before providing the directed self-assembling film:
providing an underlayer film on the substrate; and
forming a prepattern on the underlayer film such that a region which is compartmentalized by the prepattern is formed on the underlayer film, wherein

in providing the directed self-assembling film, the directed self-assembling film is provided on the region.

4. The pattern-forming method according to claim 3 , wherein at least one of the underlayer film and the prepattern comprises on a surface thereof, a group capable of reacting with the reactive group.

5. The pattern-forming method according to claim 1 , wherein the pattern obtained is a line-and-space pattern or a hole pattern.

6. The pattern-forming method according to claim 1 , wherein the block copolymer is obtained by using as a polymerization terminator of block copolymerization, a compound comprising the reactive group and a carbon-halogen bond.

7. The pattern-forming method according to claim 1 , wherein the end group is attached to the block copolymer on only one end of the block copolymer.

8. The pattern-forming method according to claim 1 , wherein the block copolymer comprises a poly((meth)acrylic acid ester) block comprising a (meth)acrylic acid ester unit.

9. The pattern-forming method according to claim 8 , wherein the block copolymer further comprises a polystyryl derivative block comprising a styryl derivative unit.

10. The pattern-forming method according to claim 1 , wherein the block copolymer is a diblock polymer or a triblock polymer.

11. The pattern-forming method according to claim 1 , wherein the pattern-forming composition further comprises a reaction accelerator or a crosslinkable compound.

12. The pattern-forming method according to claim 1 , wherein the end group is a group obtained by binding the reactive group to a divalent organic group.

13. The pattern-forming method according to claim 12 , wherein the divalent organic group is a substituted or unsubstituted divalent hydrocarbon group, or a group comprising a hetero atom-containing group between two carbon atoms of the substituted or unsubstituted divalent hydrocarbon group.

14. The pattern-forming method according to claim 13 , wherein the hetero atom-containing group is —SO—, —SO 2 —, —SO 2 O—, —SO 3 —, —CO—, —COO—, —COS—, —CONH—, —OCOO—, —OCOS—, —OCONH—, —SCONH—, or —SCSNH—.

15. The pattern-forming method according to claim 12 , wherein the divalent organic group is a divalent hydrocarbon group which is unsubstituted or substituted with a halogen atom, a hydroxy group, a carboxy group, a nitro group or a cyano group, or a group comprising a hetero atom-containing group between two carbon atoms of the divalent hydrocarbon group.

16. The pattern-forming method according to claim 15 , wherein the hetero atom-containing group is —SO—, —SO 2 —, —SO 2 O—, —SO 3 —, —CO—, —COO—, —COS—, —CONH—, —OCOO—, —OCOS—, —OCONH—, —SCONH—, or —SCSNH—.

17. The pattern-forming method according to claim 1 , wherein the reactive group is a vinyl group, a vinyl ether group, an oxetanyl group, or a combination thereof.

Assignees

• Jsr Corp

Inventors

• Komatsu Hiroyuki
• Naruoka Takehiko
• Minegishi Shinya
• Nagai Tomoki

Classifications

• H10P76/2041

  Photolithographic processes · CPC title

• H10P76/20

  of masks comprising organic materials · CPC title

• H10P50/287

  by chemical means · CPC title

• G03F7/0002 Primary

  Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping · CPC title

• C08F297/026

  polymerising acrylic acid, methacrylic acid or derivatives thereof · CPC title