Vertical hall element

Patent metadata

Field	Value
Publication number	US-9599682-B2
Application number	US-201514943493-A
Country	US
Kind code	B2
Filing date	Nov 17, 2015
Priority date	Nov 26, 2014
Publication date	Mar 21, 2017
Grant date	Mar 21, 2017

Abstract

Provided is a highly sensitive vertical Hall element without increasing a chip area. In the vertical Hall element, trenches each filled with an insulating film are formed between a first current supply end and voltage output ends, respectively, which enables the restriction of current flow into the voltage output ends to increase the ratio of a current component perpendicular to a substrate surface, resulting in enhanced sensitivity.

First claim

What is claimed is:

1. A vertical Hall element, comprising:
a semiconductor substrate;
an n-type semiconductor layer formed on the semiconductor substrate;
an n-type buried layer formed at a bottom of the n-type semiconductor layer;
a first current supply end formed above the n-type buried layer;
a pair of second current supply ends formed in a surface of the n-type semiconductor layer on both sides of the first current supply end to be symmetrical with respect to the first current supply end;
a pair of voltage output ends formed in the surface of the n-type semiconductor layer on both sides of the first current supply end to be symmetrical with respect to the first current supply end so that a line connecting the pair of voltage output ends is perpendicular to a line connecting the pair of second current supply ends; and
trenches formed in the n-type semiconductor layer between the first current supply end and one of the pair of voltage output ends and between the first current supply end and another of the pair of voltage output ends, respectively, each of the trenches being filled with an insulating film.

2. A vertical Hall element according to claim 1 , wherein the trenches surround at least part of the pair of voltage output ends, respectively.

3. A vertical Hall element according to claim 1 , wherein the trenches completely surround the pair of voltage output ends, respectively.

4. A vertical Hall element according to claim 1 , wherein the trenches have a depth that is equal to or larger than a diffusion depth of the pair of voltage output ends.

5. A vertical Hall element according to claim 1 , wherein the pair of voltage output ends have a depth that is larger than a diffusion depth of the first current supply end.

6. A vertical Hall element according to claim 1 , wherein the pair of voltage output ends have a depth that is equal to or smaller than a diffusion depth of the first current supply end.

7. A vertical Hall element, comprising:
a semiconductor substrate;
an n-type semiconductor layer formed on the n-type semiconductor substrate;
an n-type buried layer formed at a bottom of the n-type semiconductor layer;
a first current supply end formed above the n-type buried layer;
a pair of second current supply ends formed in a surface of the n-type semiconductor layer on both sides of the first current supply end to be symmetrical with respect to the first current supply end;
a pair of voltage output ends formed in the surface of the n-type semiconductor layer on both sides of the first current supply end to be symmetrical with respect to the first current supply end so that a line connecting the pair of voltage output ends is perpendicular to a line connecting the pair of second current supply ends; and
field insulating films formed in the n-type semiconductor layer between the first current supply end and one of the pair of voltage output ends and between the first current supply end and another of the pair of voltage output ends, respectively.

8. A vertical Hall element according to claim 7 , wherein the field insulating films surround at least part of the pair of voltage output ends, respectively.

9. A vertical Hall element according to claim 7 , wherein the field insulating films completely surround the pair of voltage output ends, respectively.

10. A vertical Hall element according to claim 7 , wherein the field insulating films have a depth that is equal to or larger than a diffusion depth of the pair of voltage output ends.

11. A vertical Hall element according to claim 7 , wherein the pair of voltage output ends have a depth that is larger than a diffusion depth of the first current supply end.

12. A vertical Hall element according to claim 7 , wherein the pair of voltage output ends have a depth that is equal to or smaller than a diffusion depth of the first current supply end.

13. A vertical Hall element, comprising:
a semiconductor substrate;
an n-type semiconductor layer formed on the semiconductor substrate;
an n-type buried layer formed at a bottom of the n-type semiconductor layer;
a first current supply end formed above the n-type buried layer;
a pair of second current supply ends formed in a surface of the n-type semiconductor layer on both sides of the first current supply end to be symmetrical with respect to the first current supply end;
a pair of voltage output ends formed in the surface of the n-type semiconductor layer on both sides of the first current supply end to be symmetrical with respect to the first current supply end so that a line connecting the pair of voltage output ends is perpendicular to a line connecting the pair of second current supply ends; and
p-type diffusion layers formed in the n-type semiconductor layer between the first current supply end and one of the pair of voltage output ends and between the first current supply end and another of the pair of voltage output ends, respectively.

14. A vertical Hall element according to claim 13 , wherein the p-type diffusion layers surround at least part of the pair of voltage output ends, respectively.

15. A vertical Hall element according to claim 13 , wherein the p-type diffusion layers completely surround the pair of voltage output ends, respectively.

16. A vertical Hall element according to claim 13 , wherein the p-type diffusion layers have a depth that is larger than a diffusion depth of the pair of voltage output ends.

17. A vertical Hall element according to claim 13 , wherein the pair of voltage output ends have a depth that is larger than a diffusion depth of the first current supply end.

18. A vertical Hall element according to claim 13 , wherein the pair of voltage output ends have a depth that is equal to or smaller than a diffusion depth of the first current supply end.

Assignees

• Seiko Instr Inc
• Sii Semiconductor Corp

Inventors

• Suzuki Satoshi
• Ebihara Mika
• Hioka Takaaki

Classifications

• G01R33/07

  Hall effect devices · CPC title

• G01R33/077 Primary

  Vertical Hall-effect devices · CPC title

• G01R33/075

  Hall devices configured for spinning current measurements · CPC title

• G01R33/072

  Constructional adaptation of the sensor to specific applications · CPC title

• H01L43/065

  Electricity · mapped topic