Semiconductor device

Patent metadata

Field	Value
Publication number	US-9599655-B2
Application number	US-201414245284-A
Country	US
Kind code	B2
Filing date	Apr 4, 2014
Priority date	Aug 9, 2013
Publication date	Mar 21, 2017
Grant date	Mar 21, 2017

Abstract

A semiconductor device capable of simplifying wiring work is provided. A semiconductor device includes a semiconductor element (insulated gate bipolar transistor IGBT) provided with an emitter main electrode and an emitter sense electrode, an integrated circuit having a detection terminal and a mold resin body that seals the semiconductor element and the integrated circuit, and a lead. The lead is provided with an inner lead part sealed in the mold resin body and electrically connected to the emitter sense electrode, an inner lead part sealed in the mold resin body and electrically connected to the emitter main electrode, and an outer lead part connected to the lead part on one side, connected to the inner lead part on the other side and exposed outside the mold resin body.

First claim

What is claimed is:

1. A semiconductor device comprising:
a semiconductor element provided with a main electrode and a current detection electrode;
an integrated circuit having a detection terminal;
a mold resin body that seals the semiconductor element and the integrated circuit; and
a lead provided with a first inner lead part electrically connected to the current detection electrode sealed in the mold resin body, a second inner lead part sealed in the mold resin body and electrically connected to the main electrode and an outer lead part connected to the first inner lead part on one side, connected to the second inner lead part on the other side and exposed outside the mold resin body.

2. The semiconductor device according to claim 1 , wherein a notch extending in a lateral direction of the outer lead part is provided on a surface of the outer lead part.

3. The semiconductor device according to claim 1 , wherein the integrated circuit performs alternative voltage detection on the main electrode and the current detection electrode via the detection terminal, determines, when the voltage of the detection terminal exceeds a first threshold, that an overcurrent abnormality occurs, and determines, when the voltage of the detection terminal falls below a second threshold which is smaller than the first threshold, that miswiring occurs.

4. The semiconductor device according to claim 1 ,
wherein the mold resin body is provided with two opposing main surfaces and four sides connecting the two main surfaces,
a plurality of other leads that electrically connect the semiconductor element and the integrated circuit protrude in parallel from a first side and a second side opposing the first side out of the four sides, and
the outer lead part extends from a third side which is different from the first and second sides out of the four sides.

5. A semiconductor device comprising:
a semiconductor element provided with a main electrode and a current detection electrode;
an integrated circuit having a detection terminal and a reference potential terminal;
a mold resin body that seals the semiconductor element and the integrated circuit; and
a lead provided with a first inner lead part electrically connected to the current detection electrode sealed in the mold resin body, a second inner lead part sealed in the mold resin body and electrically connected to the reference potential terminal and an outer lead part connected to the first inner lead part on one side, connected to the second inner lead part on the other side and exposed outside the mold resin body.

6. The semiconductor device according to claim 5 , further comprising a resistor sealed in the mold resin body and inserted in series in the second inner lead part.

7. The semiconductor device according to claim 5 , wherein a notch extending in a lateral direction of the outer lead part is provided on a surface of the outer lead part.

8. The semiconductor device according to claim 5 , wherein the integrated circuit performs alternative voltage detection on the main electrode and the current detection electrode via the detection terminal, determines, when the voltage of the detection terminal exceeds a first threshold, that an overcurrent abnormality occurs, and determines, when the voltage of the detection terminal falls below a second threshold which is smaller than the first threshold, that miswiring occurs.

9. The semiconductor device according to claim 5 ,
wherein the mold resin body is provided with two opposing main surfaces and four sides connecting the two main surfaces,
a plurality of other leads that electrically connect the semiconductor element and the integrated circuit protrude in parallel from a first side and a second side opposing the first side out of the four sides, and
the outer lead part extends from a third side which is different from the first and second sides out of the four sides.

10. A semiconductor device comprising:
a semiconductor element provided with a main electrode and a current detection electrode;
an integrated circuit having a detection terminal and a reference potential terminal;
a mold resin body that seals the semiconductor element and the integrated circuit; and
a lead partially sealed with the mold resin body, that electrically connects the current detection electrode, the reference potential terminal and the main electrode;
wherein the lead comprises:
a first inner lead part electrically connected to the current detection electrode sealed in the mold resin body;
a second inner lead part electrically connected to the reference potential terminal sealed in the mold resin body;
a third inner lead part sealed in the mold resin body and electrically connected to the main electrode; and
an outer lead part that has a first branch part connected to the first inner lead part, a second branch part connected to the second inner lead part and a third branch part connected to the third inner lead part, and is exposed outside the mold resin body.

11. The semiconductor device according to claim 10 , further comprising a resistor sealed in the mold resin body and inserted in series in the second inner lead part.

12. The semiconductor device according to claim 10 , wherein a notch extending in a lateral direction of the outer lead part is provided on a surface of the outer lead part.

13. The semiconductor device according to claim 10 , wherein the integrated circuit performs alternative voltage detection on the main electrode and the current detection electrode via the detection terminal, determines, when the voltage of the detection terminal exceeds a first threshold, that an overcurrent abnormality occurs, and determines, when the voltage of the detection terminal falls below a second threshold which is smaller than the first threshold, that miswiring occurs.

14. The semiconductor device according to claim 10 ,
wherein the mold resin body is provided with two opposing main surfaces and four sides connecting the two main surfaces,
a plurality of other leads that electrically connect the semiconductor element and the integrated circuit protrude in parallel from a first side and a second side opposing the first side out of the four sides, and
the outer lead part extends from a third side which is different from the first and second sides out of the four sides.

15. A semiconductor device comprising:
a semiconductor element provided with a main electrode and a current detection electrode;
a main electrode terminal electrically connected to the main electrode;
a detection electrode terminal electrically connected to the current detection electrode; and
an integrated circuit having a voltage detection terminal for performing alternative voltage detection on the main electrode and the current detection electrode, that determines, when the voltage inputted to the voltage detection terminal exceeds a first threshold, that an overcurrent abnormality occurs, and determines, when the voltage inputted to the voltage detection terminal falls below a second threshold which is smaller than the first threshold, that miswiring occurs.

Assignees

• Mitsubishi Electric Corp

Inventors

• Nakamura Hiroyuki

Classifications

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/753

  between laterally-adjacent chips · CPC title

• H10W72/5475

  multiple bond wires connected to common bond pads at both ends of the wires · CPC title

• H10W90/811

  Multiple chips on leadframes · CPC title

• H10W70/481

  for devices being provided for in groups H10D8/00 - H10D48/00 · CPC title