Synthetic quartz glass substrate and making method

Patent metadata

Field	Value
Publication number	US-9598305-B2
Application number	US-201113113152-A
Country	US
Kind code	B2
Filing date	May 23, 2011
Priority date	May 24, 2010
Publication date	Mar 21, 2017
Grant date	Mar 21, 2017

Abstract

A synthetic quartz glass substrate has a surface of 6 inch squares including a central surface area of 132 mm squares. The central surface area of 132 mm squares has a flatness of up to 50 nm. A frame region obtained by subtracting the central surface area of 132 mm squares from the central surface area of 148 mm squares has a flatness of up to 150 nm.

First claim

The invention claimed is:

1. A synthetic quartz glass substrate having a front surface having a 6 inch square major surface including a central surface area of 148 mm square including a central surface area (A) of 132 mm square, a surface region extending from the perimeter of the central surface area (A) of 132 mm square to the perimeter of the major surface being inclined and a back surface, wherein
on the front surface, the central surface area (A) of 132 mm square has a flatness of up to 50 nm,
on the front surface, a frame region (B), constituted by the central surface area of 148 mm square excluding the central surface area (A) of 132 mm square, has a flatness of up to 150 nm,
the central surface area (A) of 132 mm square has an average plane and the frame region (B) has an average plane, and the average plane of the central surface area (A) of 132 mm square is higher than the average plane of the frame region (B) by 50 nm to 100 nm, and
the front surface and the back surface of the substrate are designed such that a central surface area of 142 mm square of the front surface presents a flatness of up to 50 nm and a central surface area of 142 mm square of the back surface has a flatness of up to 500 nm, when the glass substrate is mounted on a stepper by suction chucking at a 3-mm region extending from 2 mm to 5 mm inward from the perimeter of the major surface of the front surface.

2. The synthetic quartz glass substrate of claim 1 , having a surface roughness (RMS) of up to 0.10 nm over the area of 6 inch square on the front surface.

3. The synthetic quartz glass substrate of claim 1 which is free of raised defects, recessed defects and streak flaws over the area of 6 inch square of the front surface.

4. The synthetic quartz glass substrate of claim 1 which is doped with TiO 2 .

5. The synthetic quartz glass substrate of claim 1 which is used to form a photomask.

6. A method for preparing the synthetic quartz glass substrate of claim 1 , comprising the steps of:
roughly polishing a surface of a synthetic quartz glass substrate,
measuring the flatness of the polished substrate surface,
partially polishing the substrate surface in accordance with the measured flatness, and
finish polishing the partially polished substrate surface.

7. The synthetic quartz glass substrate of claim 1 , wherein the central surface area (A) of the front surface has a flatness of 5 to 30 nm and the frame region (B) has a flatness of 50 to 120 nm.

8. The synthetic quartz glass substrate of claim 1 , wherein the back surface of the substrate is designed such that a central surface area of 142 mm square has a flatness of up to 50 nm upon stepper mounting.

9. The synthetic quartz glass substrate of claim 1 , wherein the synthetic quartz glass substrate has a parallelism of up to 5 μm.

10. The synthetic quartz glass substrate of claim 1 , wherein on the front surface, the average plane of the central surface area (A) of 132 mm square is higher than the average plane of the frame region (B) by 50 nm to 80 nm.

11. The synthetic quartz glass substrate of claim 1 , wherein on the front surface, the central surface area (A) of 132 mm square has the flatness of up to 40 nm.

12. The synthetic quartz glass substrate of claim 1 , wherein on the front surface, the central surface area (A) of 132 mm square has the flatness of up to 30 nm.

Assignees

• Matsui Harunobu
• Harada Daijitsu
• Takeuchi Masaki
• Shinetsu Chemical Co

Inventors

• Matsui Harunobu
• Harada Daijitsu
• Takeuchi Masaki

Classifications

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title

• G03F1/24 Primary

  Reflection masks; Preparation thereof · CPC title

• G03F7/0002

  Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping · CPC title

• B82Y10/00

  Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic · CPC title

• G03F1/60

  Substrates · CPC title