Micro electro mechanical system, semiconductor device, and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-9597933-B2
Application number	US-201514730362-A
Country	US
Kind code	B2
Filing date	Jun 4, 2015
Priority date	Oct 17, 2005
Publication date	Mar 21, 2017
Grant date	Mar 21, 2017

Abstract

The present invention provides a MEMS and a sensor having the MEMS which can be formed without a process of etching a sacrifice layer. The MEMS and the sensor having the MEMS are formed by forming an interspace using a spacer layer. In the MEMS in which an interspace is formed using a spacer layer, a process for forming a sacrifice layer and an etching process of the sacrifice layer are not required. As a result, there is no restriction on the etching time, and thus the yield can be improved.

First claim

What is claimed is:

1. A tire comprising a wheel and a semiconductor device attached to the wheel, the semiconductor device comprising:
a transistor;
an insulating layer over the transistor;
a sensor over the insulating layer, the sensor electrically connected to the transistor;
a first spacer layer configured to form first interspace between the insulating layer and the sensor;
a substrate over the sensor; and
a second spacer layer configured to form second interspace between the substrate and the sensor,
wherein the second spacer layer is located over the first spacer layer, and
wherein the second spacer layer overlaps with the first spacer layer.

2. The tire according to claim 1 , wherein the sensor is a pressure sensor.

3. The tire according to claim 1 , wherein each of the first and second spacer layers has adhesiveness.

4. The tire according to claim 1 , wherein the transistor is included in an electric circuit configured to detect a signal from the sensor.

5. The tire according to claim 1 , wherein each of the first and second interspaces is filled with a rare gas or an inert gas.

6. The tire according to claim 1 , wherein a top side of the first spacer layer contacts with a bottom side of the second spacer layer.

7. A vehicle having the tire according to claim 1 .

8. A tire comprising a wheel and a semiconductor device attached to the wheel, the semiconductor device comprising:
a transistor;
an insulating layer over the transistor;
a sensor over the insulating layer, the sensor comprising a first electrode and a second electrode and electrically connected to the transistor;
a first spacer layer configured to form first interspace between the insulating layer and the sensor;
a substrate over the sensor; and
a second spacer layer configured to form second interspace between the substrate and the sensor,
wherein a part of the first electrode and a part of the second electrode contact with both of the first and second spacer layers.

9. The tire according to claim 8 , wherein the sensor is a pressure sensor.

10. The tire according to claim 8 , wherein each of the first and second spacer layers has adhesiveness.

11. The tire according to claim 8 , wherein the transistor is included in an electric circuit configured to detect a signal from the sensor.

12. The tire according to claim 8 , wherein a top side of the first spacer layer contacts with a bottom side of the second spacer layer.

13. The tire according to claim 8 , wherein the second spacer layer overlaps with the first spacer layer.

14. The tire according to claim 8 , wherein each of the first and second interspaces is filled with a rare gas or an inert gas.

15. A vehicle having the tire according to claim 8 .

16. The tire according to claim 1 , wherein the sensor is a temperature sensor.

17. The tire according to claim 1 , wherein the semiconductor device is attached to a valve part of the wheel.

18. The tire according to claim 8 , wherein the sensor is a temperature sensor.

19. The tire according to claim 8 , wherein the semiconductor device is attached to a valve part of the wheel.

Assignees

• Semiconductor Energy Lab

Inventors

• Yamaguchi Mayumi
• Izumi Konami
• Tateishi Fuminori

Classifications

• H10P14/69395

  the material containing zirconium, e.g. ZrO2 · CPC title

• H10P14/69394

  the material containing titanium, e.g. TiO2 · CPC title

• H10P14/69393

  the material containing tantalum, e.g. Ta2O5 · CPC title

• H10P14/6939

  characterised by the metal · CPC title

• H10P14/683

  carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC · CPC title