Semiconductor light-emitting apparatus and vehicle headlight
US-2015372200-A1 · Dec 24, 2015 · US
US9595806B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9595806-B2 |
| Application number | US-201615059482-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 3, 2016 |
| Priority date | Mar 9, 2015 |
| Publication date | Mar 14, 2017 |
| Grant date | Mar 14, 2017 |
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The disclosed subject matter relates to a reliable laser light-emitting apparatus. The laser light-emitting apparatus can include a laser chip, which is sealed by a first base board having an opening, a second base board and a wavelength converting board. The wavelength converting board can be attached between the first base board and the second base board so as to be located between the opening and the laser chip. A laser beam emitted from the laser chip can be emitted from the opening via the wavelength converting board, and heats generated from the laser chip and the wavelength converting board can efficiently radiate from the first base board and the first base board. Thus, the disclosed subject matter can provide reliable semiconductor light-emitting apparatuses, which can emit various color lights having favorable optical characteristics and which can be used for lighting units such as a headlight under the tough environments.
Opening claim text (preview).
What is claimed is: 1. A laser light-emitting apparatus comprising: a laser chip having a first chip electrode, a second chip electrode and a light-emitting surface, and including a top contact material, the top contact material being electrically connected to the second chip electrode, and being exposed from the laser chip in an opposite direction of the first chip electrode; a first base board having a first top surface, a first side surface, a first bottom surface, an opening and a cavity made from an insulating material, the cavity having a cavity bottom surface and a cavity side surface connecting the opening of the first base board, being concaved from the first top surface of the first base board toward the cavity bottom surface via the cavity side surface, and mounting the laser chip on the cavity bottom surface via a sub mount, and the opening of the first base board facing the light-emitting surface of the laser chip with respect to each other; a second external electrode extending from the cavity bottom surface of the cavity toward the first bottom surface of the first base board, being exposed from the cavity bottom surface of the first base board, being electrically connected to the first chip electrode of the laser chip via the sub mount, and exposed from the first bottom surface of the first base board; a first external electrode having a first thickness formed in a substantially planar shape on the first top surface of the first base board, and located in an opposite direction of the opening of the first base board; a contact layer having a substantially same thickness as the first thickness of the first external electrode being located adjacent the first external electrode on the first top surface of the first base board, and surrounding the cavity and the opening on the first top surface of the first base board; a second base board having a second side surface and a second bottom surface, including a second electrode underneath the second bottom surface of the second base board, and the second electrode of the second base board connecting the top contact material of the laser chip and the first external electrode and the contact layer, which are located on the first top surface of the first base board, and thereby the second base board covering the cavity and at least a part of the opening of the first base board; an inserting concave portion including at least one of the first base board and the second base board, and located adjacent the cavity and the opening of the first base board; and a wavelength converting board being inserted into the inserting concave portion, which is concave toward the at least one of the first base board and the second base board, the wavelength converting board attached between the first base board and the second base board, and located in substantially parallel with each of the first side surface of the first base board and the second side surface of the second base board, wherein the laser chip is substantially sealed by the wavelength converting board, the first base board and the second base board. 2. The laser light-emitting apparatus according to claim 1 , further comprising: an isolating layer disposed from the bottom contacting material toward the laser chip via the sub mount, located in a direction toward at least the first external electrode on the first base board, and covering at least parts of the laser chip and the sub mount, wherein the light-emitting surface of the laser chip is exposed from the isolating layer. 3. The laser light-emitting apparatus according to claim 2 , further comprising: a thermal conductive material disposed between the isolating layer and the cavity side surface of the cavity. 4. The laser light-emitting apparatus according to claim 1 , wherein the wavelength converting board includes a phosphor plate formed in a substantially tabular shape and a light-diffusing plate formed in a substantially tabular shape, and wherein an adhesive material is disposed between each of inner peripheral regions of the phosphor plate and the light-diffusing plate and thereby the adhesive material attaching the phosphor plate to the light-diffusing plate on each of the inner peripheral regions, and a wavelength connecting layer is disposed on each of outer peripheral regions of the phosphor plate and the light-diffusing plate, which is located in an opposite direction of each of the inner peripheral regions of the phosphor plate and the light-diffusing plate, respectively. 5. The laser light-emitting apparatus according to claim 1 , wherein the wavelength converting board includes a phosphor plate formed in a substantially tabular shape and a light-diffusing plate formed in a substantially tabular shape, wherein a multi-contacting-layer is disposed between each of inner peripheral regions of the phosphor plate and the light-diffusing plate and thereby the multi-contacting-layer attaching the phosphor plate to the light-diffusing plate on each of the inner peripheral regions, and a multi-connecting-layer is disposed on each of outer peripheral regions of the phosphor plate and the light-diffusing plate, which is located in an opposite direction of each of the inner peripheral regions of the phosphor plate and the light-diffusing plate, respectively. 6. The laser light-emitting apparatus according to claim 5 , wherein the multi-contacting-layer includes a first light-reflecting layer and a first contact-contributing layer, and the multi-connecting-layer includes a second light-reflecting layer and a second contact-contributing layer, and wherein the first light-reflecting layer contacts each of the inner peripheral regions of the phosphor plate and the light-diffusing plate, and the second light-reflecting layer contacts each of the outer peripheral regions of the phosphor plate and the light-diffusing plate. 7. The laser light-emitting apparatus according to claim 6 , wherein the first light-reflecting layer is a laminated film of titanium (Ti) and silver (Ag), and the first contact-contributing layer is a laminated film in order of nickel (Ni), platinum (Pt) and gold (Au), and wherein the second light-reflecting layer is a laminated film in order of Ti and Ag, and the second contact-contributing layer is a laminated film in order of Ni, Pt, Au and gold-tin (AuSn). 8. The laser light-emitting apparatus according to claim 1 , wherein the phosphor plate of the wavelength converting board includes at least one of an yellow phosphor, a red phosphor, a green phosphor and a blue phosphor. 9. The laser light-emitting apparatus according to claim 1 , wherein a semiconductor laser diode emitting blue light is used as the laser chip, and Yttrium aluminum garnet (YAG) phosphor ceramic is used as the phosphor plate of the wavelength converting board. 10. The laser light-emitting apparatus according to claim 1 , wherein the laser chip is a laser diode emitting ultraviolet laser beam, and the phosphor plate of the wavelength converting board includes at least one of an yellow phosphor, a red phosphor, a green phosphor and a blue phosphor.
comprising a non-linear region, e.g. generating harmonics of the laser frequency · CPC title
Arrangements for thermal management · CPC title
for nonlinear frequency conversion, e.g. second harmonic generation [SHG] or sum- or difference-frequency generation outside the laser cavity · CPC title
Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC · CPC title
blue laser based on GaN or GaP · CPC title
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