Highly luminescent nanostructures and methods of producing same
US-9169435-B2 · Oct 27, 2015 · US
US9595625B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9595625-B2 |
| Application number | US-201615096696-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 12, 2016 |
| Priority date | Oct 17, 2013 |
| Publication date | Mar 14, 2017 |
| Grant date | Mar 14, 2017 |
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Quantum dots (nanoparticle material) each having a core-shell structure including a core part and a shell part that protects the core part. The shell part of the quantum dot has a thickness T of 3 to 5 ML based on the constituent molecule of the shell part. A light-emitting device includes the quantum dots.
Opening claim text (preview).
The invention claimed is: 1. A light-emitting device comprising: a hole transport layer; an electron transport layer; a first light-emitting layer interposed between the hole transport layer and the electron transport layer, the first light-emitting layer comprising first quantum dots, the first light-emitting layer being constructed to emit light when an electric current is injected into the first light-emitting layer, wherein the first quantum dots are a nanoparticle material comprising a first core part and a first shell part coating the first core part, the first shell part having a thickness of 3 to 5 monolayers of a constituent molecule of the first shell part; and a second light-emitting layer, the second light-emitting layer comprising second quantum dots, the second light-emitting layer being constructed to emit light when the electric current is injected into the second light-emitting layer, wherein the second quantum dots are a nanoparticle material comprising a second core part and a second shell part coating the second core part, the second shell part having a thickness of less than 3 monolayers based on a constituent molecule of the second shell part, the first light-emitting layer being disposed proximal to the electron transport layer relative to the second light-emitting layer, and the second light-emitting layer being disposed proximal to the hole transport layer relative to the first light-emitting layer, and the first shell part has a greater thickness than the second shell part. 2. The light-emitting device according to claim 1 , wherein the first shell part has a first energy level of a valence band on the basis of a vacuum level, and the first core part has a second energy level of a valence band on the basis of the vacuum level, the first energy level being lower than the second energy level. 3. The light-emitting device according to claim 1 , wherein the first shell part has an energy level of a valence band on the basis of a vacuum level that is lower than a HOMO level of the electron transport layer. 4. The light-emitting device according to claim 1 , wherein the first light-emitting layer has a thickness of 0.5 to 2 monolayers based on a particle size of the first quantum dots. 5. The light-emitting device according to claim 2 , wherein the first light-emitting layer has a thickness of 0.5 to 2 monolayers based on a particle size of the first quantum dots. 6. The light-emitting device according to claim 3 , wherein the first light-emitting layer has a thickness of 0.5 to 2 monolayers based on a particle size of the first quantum dots.
with zinc cadmium · CPC title
Nanometer sized, i.e. from 1-100 nanometer · CPC title
with zinc or cadmium · CPC title
Nanooptics, e.g. quantum optics or photonic crystals · CPC title
Particles consisting of a mixture of two or more inorganic phases · CPC title
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