Switching device for power conversion and power conversion device

Patent metadata

Field	Value
Publication number	US-9595602-B2
Application number	US-201214418610-A
Country	US
Kind code	B2
Filing date	Sep 7, 2012
Priority date	Sep 7, 2012
Publication date	Mar 14, 2017
Grant date	Mar 14, 2017

Abstract

The present invention provides a switching device ( 100 ) for power conversion in which a first gate electrode ( 6 ), a p-type channel layer ( 2 ) having an n-type emitter region ( 3 ), a second gate electrode ( 13 ), and a p-type floating layer ( 15 ) are repeatedly arranged in order on the surface side of an n-type semiconductor substrate ( 1 ). An interval a between the two gates ( 6, 13 ) that sandwich the p-type channel layer ( 2 ) is configured to be smaller than an interval b between the two gates ( 13, 6 ) that sandwich the p-type floating layer ( 15 ). The first gate electrode ( 6 ) and the second gate electrode ( 13 ) are both supplied with drive signals having a time difference in drive timing.

First claim

The invention claimed is:

1. A switching device for power conversion, comprising:
a semiconductor layer of a first conductivity type formed on a semiconductor substrate;
a channel layer of a second conductivity type abutting the semiconductor layer of the first conductivity type and formed on a first surface of the semiconductor substrate;
a set of gate electrodes comprising a first gate electrode and a second gate electrode provided to respectively abut two trenches with the semiconductor layer, the channel layer, and a gate insulating film interposed, the trenches being mutually adjacent to a plurality of trenches formed on the first surface of the semiconductor substrate so as to penetrate the channel layer;
an emitter region of a first conductivity type formed to abut each of the first gate electrode and the second gate electrode through the gate insulating film, at a part of a surface of the channel layer sandwiched between the first gate electrode and the second gate electrode that belong to a same group in the set of gate electrodes;
an emitter electrode to which the emitter region of the first conductivity type and the channel layer of the second conductivity type are electrically connected;
a floating layer of a second conductivity type sandwiched between two gate electrodes that belong to a mutually different group of the set of gate electrodes and are adjacent to each other, the floating layer being the channel layer insulated from the emitter electrode;
a collector layer of a second conductivity type abutting the semiconductor layer of the first conductivity type and formed on a second surface of the semiconductor substrate; and
a collector electrode electrically connected to the collector layer of the second conductivity type,
wherein when an interval between the first gate electrode and the second gate electrode that belong to the same set is taken to be a, and an interval between two gate electrodes that belong to the mutually different group and are adjacent to each other is taken to be b, the respective gate electrodes are arranged to meet b>a, and
wherein a first drive signal and a second drive signal having a time difference in drive timing are respectively supplied to the first gate electrode and the second gate electrode.

2. The switching device for power conversion according to claim 1 , wherein a time difference between a timing at which the first drive signal is turned off and a timing at which the second drive signal is turned off is 3μ seconds or more.

3. The switching device for power conversion according to claim 1 , wherein a time difference between a timing at which the first drive signal is turned on and a timing at which the second drive signal is turned on is 3μ seconds or more.

4. The switching device for power conversion according to claim 3 , wherein the interval a between the first gate electrode and the second gate electrode that belong to the same group is less than or equal to 1 μm.

5. The switching device for power conversion according to claim 1 ,
wherein the first gate electrode and the second gate electrode are connected through a resistor, and
wherein the first drive signal for driving the first gate electrode is a signal obtained by delaying, by use of the resistor, the second drive signal for driving the second gate electrode.

6. The switching device for power conversion according to claim 1 ,
wherein the first gate electrode and the second gate electrode are connected through a resistor,
wherein the first gate electrode and the emitter electrode are connected through a capacitor, and
wherein the first drive signal for driving the first gate electrode is a signal obtained by delaying, by use of the resistor and the capacitor, the second drive signal for driving the second gate electrode.

7. The switching device for power conversion according to claim 1 , wherein a buffer layer of a first conductivity type higher in impurity concentration than the semiconductor layer of the first conductivity type is formed between the semiconductor layer of the first conductivity type and the collector layer of the second conductivity type.

8. The switching device for power conversion according to claim 1 , wherein a hole barrier layer of a first conductivity type higher in impurity concentration than the semiconductor layer of the first conductivity type is formed at a boundary portion between the channel layer and the semiconductor layer of the first conductivity type, the channel layer being sandwiched between the first gate electrode and the second gate electrode that belong to the same group in the set of the first gate electrodes and the second gate electrodes.

9. A switching device for power conversion, comprising:
a semiconductor layer of a first conductivity type formed on a semiconductor substrate;
a channel region of a second conductivity type abutting the semiconductor layer of the first conductivity type and formed on a first surface of the semiconductor substrate;
a gate electrode provided to abut both the channel region of the second conductivity type and the semiconductor layer of the first conductivity type through a gate insulating film;
an emitter region of a first conductivity type provided in a position apart from the semiconductor layer of the first conductivity type within the channel region in such a manner that a part of the emitter region abuts the gate electrode through the gate insulating film;
an emitter electrode to which the emitter region of the first conductivity type and the channel region of the second conductivity type are electrically connected;
a collector layer of a second conductivity type abutting the semiconductor layer of the first conductivity type and formed on a second surface of the semiconductor substrate; and
a collector electrode electrically connected to the collector layer of the second conductivity type,
wherein the gate electrode is separated into a first gate electrode and a second gate electrode respectively supplied with a first drive signal and a second drive signal having a time difference in drive timing, and
wherein the first gate electrode and the second gate electrode are alternately arranged on the first surface of the semiconductor substrate.

10. The switching device for power conversion according to claim 9 , wherein a time difference between a timing at which the first drive signal is turned off and a timing at which the second drive signal is turned off is 3μ seconds or more.

11. The switching device for power conversion according to claim 9 , wherein a time difference between a timing at which the first drive signal is turned on and a timing at which the second drive signal is turned on is 3μ seconds or more.

12. A power conversion device configured to include:
a pair of DC terminals;
a DC-AC conversion circuit configured to connect two current switching devices for turning on and off a current in series between the DC terminals; and
an AC terminal connected to a point to which the two current switching devices of the DC-AC conversion circuit are connected,
wherein the current switching devices are the switching device for power conversion according to claim 1 .

13. A power conversion device configured to include:
a pair of DC terminals;
a DC-AC conversion circuit configured to connect two current switching devices for turning on and off a current in series between the DC terminals; and
an AC terminal connected to a point to which the two current switching devices of the DC-AC conversion circuit are connected,
wherein the current switching devices are the switching device for power conversion according to claim 10 .

Assignees

• Hashimoto Takayuki
• Mori Mutsuhiro
• Masunaga Masahiro
• Hitachi Ltd

Inventors

• Hashimoto Takayuki
• Mori Mutsuhiro
• Masunaga Masahiro

Classifications

• H01L29/7396

  Electricity · mapped topic

• H02M7/5387

  in a bridge configuration · CPC title

• H02M1/08

  Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters · CPC title

• H01L29/7397 Primary

  Electricity · mapped topic

• H01L29/0696

  Electricity · mapped topic