Layouts and vertical structures of MOSFET devices

Patent metadata

Field	Value
Publication number	US-9595582-B2
Application number	US-201514630885-A
Country	US
Kind code	B2
Filing date	Feb 25, 2015
Priority date	Jun 20, 2014
Publication date	Mar 14, 2017
Grant date	Mar 14, 2017

Abstract

A metal-oxide-semiconductor field-effect transistor device includes a first active area, a first gate electrode configured to cross the first active area and extend in a Y direction, and define a first source area and a first drain area, first gate contacts disposed on the first gate electrode to align on a first virtual gate passing line extending in the Y direction, first source contacts disposed on the first source area to align on a first virtual source passing line extending in the Y direction, and first drain contacts disposed on the first drain area to align on a first virtual drain passing line extending in the Y direction, wherein at least one of the first drain contacts is disposed to align on any one of first virtual X-straight lines configured to pass between the first source contacts and extend parallel in an X direction perpendicular to the Y direction.

First claim

What is claimed is:

1. A metal-oxide-semiconductor field-effect transistor (MOSFET) device, comprising:
a first active area;
a first gate electrode that extends in a Y direction to cross the first active area, the first gate electrode defining a first source area and a first drain area in the first active area;
first gate contacts on the first gate electrode, the first gate contacts aligned on a first virtual gate passing line that extends in the Y direction;
first source contacts on the first source area, the first source contacts aligned on a first virtual source passing line that extends in the Y direction; and
first drain contacts on the first drain area, the first drain contacts aligned on a first virtual drain passing line that extends in the Y direction,
wherein at least one of the first drain contacts is on any one of first virtual lines that extend in parallel in an X direction and that each pass between two adjacent ones of the first source contacts, wherein the X direction is perpendicular to the Y direction.

2. The device according to claim 1 , wherein the first gate contacts are disposed on second virtual lines that extend in parallel in the X direction to cross the first source contacts.

3. The device according to claim 2 , wherein the first drain contacts are not disposed on a virtual inter-gate contact line that extends in the X direction to pass between the two adjacent first gate contacts.

4. The device according to claim 3 , wherein the virtual inter-gate contact line crosses a mid-point of a virtual line that extends between two adjacent first gate contacts.

5. The device according to claim 1 , wherein the first source contacts and the first drain contacts are disposed in a zigzag pattern in the Y direction.

6. The device according to claim 1 , wherein the first gate contacts and the first drain contacts are disposed in a zigzag pattern in the Y direction.

7. The device according to claim 1 , wherein distances between one of the first drain contacts and the two first source contacts that are closest to the one of the first drain contacts are substantially same.

8. The device according to claim 1 , wherein the first drain contacts are located at a lower level in the Y direction than the first gate contacts.

9. The device according to claim 8 , wherein the first drain contacts have a bar shape, a rectangular shape, or an oval shape in a top view.

10. The device according to claim 1 , further comprising:
a second active area adjacent the first active area;
a second gate electrode that extends in the Y direction to cross the second active area, the second gate electrode defining a second source area and a second drain area in the second active area;
second gate contacts on the second gate electrode, the second gate contacts aligned on a second virtual gate passing line that extends in the Y direction;
second source contacts on the second source area, the second source contacts aligned on a second virtual source passing line that extends in the Y direction; and
second drain contacts on the second drain area, the second drain contacts aligned on a second virtual drain passing line that extends in the Y direction,
wherein at least one of the second drain contacts is on any one of the second virtual lines.

11. The device according to claim 10 , wherein the first drain area is adjacent the second source area.

12. The device according to claim 10 , wherein the first drain contacts and the second source contacts are disposed in a zigzag pattern in the Y direction.

13. The device according to claim 10 , wherein the first source area, the first drain area, the second source area, and the second drain area are substantially the same size.

14. The device according to claim 10 , wherein distances between the first source contacts and the first gate electrode, distances between the first drain contacts and the first gate electrode, distances between the second sources contact and the second gate electrode, and distances between the second drain contacts and the second gate electrode are substantially the same.

15. A metal-oxide-semiconductor field-effect transistor (MOSFET) device, comprising:
a first active area;
a first gate electrode that extends in a Y direction to cross the first active area, the first gate electrode defining a first source area and a first drain area in the first active area;
first gate contacts on the first gate electrode, the first gate contacts aligned on a first virtual gate passing line that extends in the Y direction;
first source contacts on the first source area, the first source contacts aligned on a first virtual source passing line that extends in the Y direction; and
first drain contacts on the first drain area, the first drain contacts aligned on a first virtual drain passing line that extends in the Y direction,
wherein at least some of the first source contacts are aligned in an X direction that is perpendicular to the Y direction with a respective one of the first drain contacts, and wherein the first gate contacts are not aligned in the X direction with either the first source contacts or the first drain contacts.

16. The device according to claim 15 , wherein at least one of the first gate contacts is on any one of first virtual lines that extend in parallel in the X direction and that each pass between two adjacent ones of the first source contacts.

17. The device according to claim 15 , wherein all of the first drain contacts are on a first side of a virtual line that extends in an X direction and all of the first gate contacts are on an opposite side of the virtual line, wherein the X direction is perpendicular to the Y direction.

18. The device according to claim 17 , wherein the first drain contacts have a bar shape, a rectangular shape, or an oval shape.

19. The device according to claim 15 , wherein all of the first source contacts are on a first side of a virtual line that extends in an X direction and all of the first gate contacts are on an opposite side of the virtual line, wherein the X direction is perpendicular to the Y direction.

20. The device according to claim 19 , wherein the first source contacts have a bar shape, a rectangular shape, or an oval shape.

Assignees

• Lee Jae-Hoon
• Ju Nok-Hyun
• Yang Hyeong-Mo
• Chang Sung-Ii
• Lee Chan-Ho
• Samsung Electronics Co Ltd

Inventors

• Lee Jae-Hoon
• Ju Nok-Hyun
• Yang Hyeong-Mo
• Chang Sung-Ii
• Lee Chan-Ho

Classifications

• H10D30/797

  being in source or drain regions, e.g. SiGe source or drain · CPC title

• H10D30/608 Primary

  having non-planar bodies, e.g. having recessed gate electrodes · CPC title

• H01L27/088

  Electricity · mapped topic

• H01L29/0692 Primary

  Electricity · mapped topic

• H01L29/41775

  Electricity · mapped topic