Two-dimensional (2D) material element with in-plane metal chalcogenide-based heterojunctions and devices including said element

Patent metadata

Field	Value
Publication number	US-9595580-B2
Application number	US-201414508378-A
Country	US
Kind code	B2
Filing date	Oct 7, 2014
Priority date	Nov 5, 2013
Publication date	Mar 14, 2017
Grant date	Mar 14, 2017

Abstract

According to example embodiments, a two-dimensional (2D) material element may include a first 2D material and a second 2D material chemically bonded to each other. The first 2D material may include a first metal chalcogenide-based material. The second 2D material may include a second metal chalcogenide-based material. The second 2D material may be bonded to a side of the first 2D material. The 2D material element may have a PN junction structure. The 2D material element may include a plurality of 2D materials with different band gaps.

First claim

What is claimed is:

1. A two-dimensional (2D) material element comprising:
a first 2D material including a first monolayer of crystalline material that includes a first metal chalcogenide-based material; and
a second 2D material including a second monolayer of crystalline material that includes a second metal chalcogenide-based material,
a side corresponding to a thickness of the second 2D material being chemically bonded to a side corresponding to a thickness of the first 2D material,
the first and second monolayers of crystalline material being arranged laterally and in plane with each other,
the first metal chalcogenide-based material includes a first metal atom,
the second metal chalcogenide-based material includes a second metal atom, and
the first and second metal atoms being different from each other.

2. The 2D material element of claim 1 , wherein the first 2D material and the second 2D material are covalently bonded to each other.

3. The 2D material element of claim 1 , wherein
the first 2D material and the second 2D material are interatomically bonded to each other, and
the first 2D material and the second 2D material have a continuous crystal structure at a bonding portion between the first 2D material and the second 2D material.

4. The 2D material element of claim 1 , wherein
the first metal chalcogenide-based material is a first transition metal dichalcogenide (TMDC) material,
the second metal chalcogenide-based material is a second transition metal dichalcogenide (TMDC) material, and
the first and second metal dichalcogenide (TMDC) materials are different from each other.

5. The 2D material element of claim 1 , wherein at least one of the first metal chalcogenide-based material and the second metal chalcogenide-based material include:
a metal atom including one of Mo, W, Nb, V, Ta, Ti, Zr, Hf, Tc, Re, Cu, Ga, In, Sn, Ge, and Pb, and
a chalcogen atom including one of S, Se, and Te.

6. The 2D material element of claim 1 , wherein the first 2D material and the second 2D material are semiconductors.

7. The 2D material element of claim 1 , wherein
the first 2D material is an n-type semiconductor, and
the second 2D material is a p-type semiconductor.

8. The 2D material element of claim 7 , wherein
the first metal chalcogenide-based material includes a first chalcogen atom,
the second metal chalcogenide-based material includes a second chalcogen atom, and
the first and second chalcogen atoms are the same.

9. The 2D material element of claim 7 , wherein the first metal chalcogenide-based material is one of MoS 2 , MoSe 2 , MoTe 2 , WSe 2 , and WTe 2 .

10. The 2D material element of claim 7 , wherein the second metal chalcogenide-based material is one of WS 2 , ZrS 2 , ZrSe 2 , HfS 2 , HfSe 2 , and NbSe 2 .

11. The 2D material element of claim 7 , wherein
the first metal chalcogenide-based material includes MoS 2 , and
the second metal chalcogenide-based material includes WS 2 .

12. The 2D material element of claim 1 , wherein one of the first and second 2D materials is arranged at two opposite sides of the other one of the first and second 2D materials.

13. The 2D material element of claim 1 , wherein
the first 2D material is one of a plurality of first 2D materials,
the second 2D material is one of a plurality of second 2D materials, and
the plurality of first and second 2D materials define a patterned structure.

14. The 2D material element of claim 1 , further comprising:
a third 2D material bonded to a side of one of the first 2D material and the second 2D material.

15. A semiconductor device comprising:
a multi-layer structure including a semiconductor layer and at least one non-semiconductor layer, wherein
the semiconductor layer includes the 2D material element of claim 1 , and
the at least one non-semiconductor layer is on or under at least one surface of the semiconductor layer.

16. The semiconductor device of claim 15 , wherein
the multi-layer structure includes a first conductive layer and a second conductive layer,
the semiconductor layer is on the first conductive layer, and
the second conductive layer is on the semiconductor layer.

17. The semiconductor device of claim 16 , wherein
the multi-layer structure further includes a third conductive layer and an insulation layer,
the third conductive layer is on the second conductive layer, and
the insulation layer is between the second conductive layer and the third conductive layer.

18. The semiconductor device of claim 15 , wherein
the multi-layer structure includes a first insulation layer, a second insulation layer, a first conductive layer, and a second conductive layer,
the semiconductor layer is on the first insulation layer,
the second insulation layer is on the semiconductor layer,
the first insulation layer is on the first conductive layer,
the first conductive layer faces the semiconductor layer,
the second conductive layer is on the second insulation layer, and
the second conductive layer faces the semiconductor layer.

19. The semiconductor device of claim 15 , wherein
the multi-layer structure includes a first conductive layer, a second conductive layer, and an insulation layer,
the second conductive layer is on the first conductive layer,
and the insulation layer is between the first conductive layer and the second conductive layer.

20. The semiconductor device of claim 15 , wherein the multi-layer structure comprises:
a first conductive layer spaced apart from the semiconductor layer;
an insulation layer between the semiconductor layer and the first conductive layer; and
a second conductive layer and a third conductive layer that contact first and second regions of the semiconductor layer, respectively.

21. The semiconductor device of claim 15 , wherein
the multi-layer structure includes an insulation layer and a first conductive layer,
the semiconductor layer is on the insulation layer, and
the first conductive layer is on the semiconductor layer.

22. The semiconductor device of claim 21 , wherein the multi-layer structure includes:
a second semiconductor layer facing the semiconductor layer, the insulation layer being between the semiconductor layer and the second semiconductor layer; and
a second conductive layer and a third conductive layer that contact first and second regions of the second semiconductor layer, respectively.

23. The semiconductor device of claim 15 , wherein the at least one non-semiconductor layer includes at least one of a conductive 2D material and an insulating 2D material.

24. The semiconductor device of claim 15 , wherein the semiconductor layer includes at least one of a PN junction structure, a PNP junction structure, and an NPN junction structure.

25. The semiconductor device of claim 15 , wherein the semiconductor layer includes a plurality of 2D materials having different energy band gaps.

26. The semiconductor device of claim 15 , wherein
the semiconductor device is a tunneling device, and
the semiconductor layer is a tunneling layer.

27. The semiconductor device of claim 15 , wherein
the semiconductor device is a binary junction transistor (BJT), and
the semiconductor layer is a tunneling layer.

28. The semiconductor device of claim 15 , wherein
the semiconductor device is a barristor, and
the semiconductor layer is a channel layer.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Shin Hyeonjin
• Park Seongjun
• Lee Jaeho
• Heo Jinseong

Classifications

• C01P2006/40

  Electric properties · CPC title

• C01G39/06

  Sulfides · CPC title

• Y10T428/24802

  Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] · CPC title

• C01G25/00

  Compounds of zirconium · CPC title

• C01G27/00

  Compounds of hafnium · CPC title